Infineon Technologies PTFA181001FV4R250FTMA1

Overview

PTFA181001FV4R250FTMA1 from Infineon is a 100 W LDMOS RF power transistor designed for DCS-band (1805–1880 MHz) EDGE and WCDMA base station power amplifiers. It delivers 45 W average output power at 1879.8 MHz under 28 V, 750 mA bias with 16.5 dB linear gain, 36% drain efficiency, and 1.8% RMS EVM for 3GPP-compliant signals.

For engineers reviewing the PTFA181001FV4R250FTMA1 datasheet, PTFA181001FV4R250FTMA1 pinout, PTFA181001FV4R250FTMA1 application, or PTFA181001FV4R250FTMA1 equivalent, key selection factors include broadband internal matching, 10:1 VSWR ruggedness at 100 W CW, thermally-enhanced earless flange package (H-37248-2), and integrated Class 2 HBM ESD protection.

Technical Context

This device operates as a single-ended RF power amplifier stage in macrocell and microcell base station transceivers. Its LDMOS process enables high thermal conductivity (R_θJC = 0.43 °C/W), stable gate bias over temperature (±3% normalized V_GS drift from –20°C to +100°C), and robust 65 V V_(BR)DSS rating for transient tolerance.

The transistor features broadband input/output impedance matching optimized for 1805–1880 MHz operation without external tuning networks. DC characteristics confirm low R_DS(on) (0.85 Ω typ), tight V_GS threshold (2.0–3.0 V at I_D = 750 mA), and sub-1 µA gate leakage-enabling stable Class AB biasing in production PA modules.

Key Specifications

Pinout & Package

Package: H-37248-2 - Thermally-enhanced earless flange, single-ended metal-ceramic package with solderable baseplate and isolated source terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with PTFA181001E V4, the PTFA181001FV4R250FTMA1 offers superior manufacturability via earless-flange SMT compatibility and slightly better thermal performance; versus PD57018-E, it provides built-in ESD safety and tighter gain consistency across production lots.

Availability

PTFA181001FV4R250FTMA1 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, EDGE transmitters, and multi-carrier CDMA2000 systems requiring stable component supply and long-term lifecycle support.

Supply support for PTFA181001FV4R250FTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power solutions for wireless infrastructure.

This part belongs to Infineon's PTFA series of thermally-optimized LDMOS transistors, engineered specifically for high-efficiency, high-reliability DCS-band base station power amplifiers operating up to 200°C junction temperature.

FAQ

What is the maximum continuous drain current rating for PTFA181001FV4R250FTMA1?

The device does not specify a maximum continuous drain current (I_D) rating. Instead, its safe operating area is defined by maximum ratings: V_DSS = 65 V, P_D = 407 W, and T_J = 200°C. At 28 V operation, the practical DC bias current is limited to 750 mA for linear WCDMA operation, with peak pulsed current reaching ~3.3 A during P–1dB compression.

Does PTFA181001FV4R250FTMA1 require external gate bias sequencing?

No external gate bias sequencing is required. The device operates with a fixed V_GS of 2.5 V typical at I_DQ = 750 mA and V_DS = 28 V. Gate voltage remains stable across temperature (±3% from –20°C to +100°C), enabling simple resistive or regulator-based bias networks without active feedback loops.

Can PTFA181001FV4R250FTMA1 be used in L-band (1450–1490 MHz) applications?

No. The internal matching network is optimized exclusively for 1805–1880 MHz. At 1450 MHz, measured gain drops >4 dB and efficiency falls below 28%, violating datasheet specifications. Use Infineon's PTFA141001F for L-band DCS-1800 adjacent bands.

What is the recommended PCB material and copper weight for the reference circuit?

The official reference design specifies Rogers TMM4 substrate (ε_r = 4.5, thickness = 0.76 mm) with 2 oz. copper. Microstrip traces must follow exact dimensions (e.g., l1 = 27.43 mm × 1.37 mm for 50 Ω). FR-4 is not validated and causes >1.5 dB gain loss and degraded ACPR due to dielectric loss and dispersion.