Infineon Technologies PTFA190451EV4R250XTMA1

Overview

PTFA190451EV4R250XTMA1 from Infineon is a thermally-enhanced, internally matched LDMOS RF power transistor designed for 2-carrier WCDMA and TD-SCDMA base station final-stage amplification in the 1930–1990 MHz band. It delivers 11 W average output power at 1960 MHz with 17.5 dB linear gain, 28% drain efficiency, and –39 dBc intermodulation distortion under 3GPP signal conditions (PAR = 8 dB). Its H-36265-2 package supports high-reliability macrocell infrastructure.

For engineers reviewing the PTFA190451EV4R250XTMA1 datasheet, PTFA190451EV4R250XTMA1 pinout, PTFA190451EV4R250XTMA1 application, or PTFA190451EV4R250XTMA1 equivalent, key selection criteria include broadband internal matching, 10:1 VSWR tolerance at 45 W CW, integrated Class 2 ESD protection, thermal resistance of 0.83 °C/W, and compatibility with 28 V supply rails in multi-carrier cellular PA designs.

Technical Context

This LDMOS FET operates as a single-ended, common-source RF power amplifier stage optimized for wideband cellular standards. Its internal broadband matching eliminates external input/output tuning networks across 1930–1990 MHz, while its 65 V V(BR)DSS rating and low RDS(on) of 0.91 Ω support robust operation under mismatched load conditions and high peak-to-average ratio signals.

The device uses Infineon's advanced LDMOS process to achieve low HCI drift and stable DC biasing (VGS = 2.0–3.0 V at IDQ = 450 mA), enabling consistent linearity and efficiency over temperature. Its thermal design-featuring an eared flange in H-36265-2 package-enables junction temperatures up to 200 °C with controlled derating above 25 °C.

Key Specifications

Pinout & Package

Package: H-36265-2 - thermally-enhanced slotted flange metal-ceramic package with gold-plated leads and integral heat slug. Dimensions: 20.31 × 10.16 mm (0.800 × 0.400 in), flange thickness 3.56 mm (0.140 in).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA190451FV4R250XTMA1, this part offers identical electrical performance with mechanical differentiation for thermal mounting flexibility; versus MRF6P21190HR5, it trades raw power headroom for integrated matching, lower thermal resistance, and simplified layout-making it optimal for cost- and size-constrained 11 W PA modules.

Availability

PTFA190451EV4R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base station PA, WCDMA multi-carrier amplifiers, and TD-SCDMA infrastructure requiring stable component supply, long-lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for PTFA190451EV4R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global manufacturing and R&D centers.

This device belongs to Infineon's thermally-enhanced LDMOS RF power transistor product line, engineered specifically for high-efficiency, high-reliability cellular infrastructure amplifiers operating in licensed sub-2 GHz bands.

FAQ

What is the maximum safe operating voltage for PTFA190451EV4R250XTMA1?

The absolute maximum drain-source voltage is 65 V, but the device is characterized and qualified for continuous operation at 28 V DC supply. Exceeding 28 V risks exceeding thermal limits and degrading long-term reliability-even if within V(BR)DSS-due to increased power dissipation and junction temperature rise beyond rated derating curves.

Does PTFA190451EV4R250XTMA1 require external input/output matching networks?

No-this device features broadband internal matching optimized for 1930–1990 MHz, eliminating the need for external input/output matching components in standard 2-carrier WCDMA applications. The reference circuit (Datasheet p.6) confirms full-band operation without tunable elements, though narrowband optimization may use optional stubs.

How does the H-36265-2 package differ from H-37265-2 used in PTFA190451F?

H-36265-2 has a slotted (eared) flange for mechanical clamping and torque-based thermal interface, while H-37265-2 uses an earless flange relying on surface contact and adhesive bonding. Both share identical die, pinout, and RF performance-but require distinct heatsink interface designs and mounting procedures per Infineon's mechanical drawings.

Is PTFA190451EV4R250XTMA1 suitable for LTE applications?

While not characterized for LTE-specific waveforms in the datasheet, its 1930–1990 MHz bandwidth, 17.5 dB gain, and –39 dBc IMD3 at 11 W avg meet baseline requirements for Band 1/35/39 LTE FDD/TDD PAs. However, full validation requires customer-level testing with LTE OFDMA signals, as ACLR and EVM depend on external predistortion and matching.