Infineon Technologies PTFA190451EV4XWSA1

Overview

PTFA190451EV4XWSA1 from Infineon is a thermally-enhanced, internally matched LDMOS RF power transistor designed for 2-carrier WCDMA and TD-SCDMA base station final-stage amplification in the 1930–1990 MHz band. It delivers 11 W average output power at 1960 MHz, 28 V supply, with 17.5 dB linear gain, 28% drain efficiency, and –39 dBc intermodulation distortion under 3GPP signal conditions.

For engineers reviewing the PTFA190451EV4XWSA1 datasheet, PTFA190451EV4XWSA1 pinout, PTFA190451EV4XWSA1 application, or PTFA190451EV4XWSA1 equivalent, key selection criteria include broadband internal matching, 10:1 VSWR ruggedness at 45 W CW, integrated Class 2 HBM ESD protection, thermal resistance of 0.83 °C/W, and compatibility with 28 V DC bias networks in macrocell PA designs.

Technical Context

This LDMOS FET operates as a high-efficiency, high-linearity RF power amplifier stage in cellular infrastructure transceivers. Its design targets 3GPP-compliant WCDMA signals with 8 dB PAR and 10 MHz carrier spacing, delivering stable performance across junction temperatures up to 200 °C and drain-source voltages up to 65 V.

The device uses Infineon's advanced LDMOS process on silicon, enabling low HCI drift and excellent thermal stability. It is optimized for single-ended operation with broadband internal matching from 1930 to 1990 MHz, eliminating external input/output matching networks in many reference designs.

Key Specifications

Pinout & Package

PTFA190451EV4XWSA1 is housed in the H-36265-2 thermally-enhanced slotted-flange package, featuring gold-plated leads and a copper-tungsten flange for low thermal impedance. The package supports surface-mount assembly with mechanical clamping and is rated for 211 W total dissipation at TCASE = 25°C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with PTFA190451EV4XWSA1, the PTFA190451FV4XWSA1 offers identical RF performance with mechanical packaging variation, while PD57045-E trades 1 dB gain and 1% efficiency for wider bandwidth-making it suitable for dual-band systems but less optimal for pure WCDMA macrocell linearity-critical designs.

Availability

PTFA190451EV4XWSA1 is available at Aetrix Electronics and suitable for macrocell base station PA modules, WCDMA dual-carrier transmitters, and TD-SCDMA multi-carrier amplifiers requiring stable component supply and long-lifecycle support.

Supply support for PTFA190451EV4XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power transistors for wireless infrastructure.

PTFA190451EV4XWSA1 belongs to Infineon's thermally-enhanced LDMOS portfolio, engineered specifically for high-efficiency, high-reliability RF power amplification in 3G/4G cellular base stations operating below 2.2 GHz.

FAQ

What is the maximum safe operating drain voltage for PTFA190451EV4XWSA1?

The absolute maximum drain-source voltage (VDSS) is 65 V, verified per datasheet Section "Maximum Ratings". Operation above 28 V is permitted only in pulsed or low-duty-cycle modes, and junction temperature must remain ≤200 °C. Continuous DC operation beyond 28 V is not recommended due to reduced reliability and efficiency degradation observed in characterization data at 32 V.

Does PTFA190451EV4XWSA1 require external input matching?

No-this device features broadband internal matching across 1930–1990 MHz, as confirmed in datasheet Figures 7 and 10. Input return loss exceeds 10 dB across the band in the reference circuit, eliminating need for external input matching networks in standard macrocell PA layouts.

Can PTFA190451EV4XWSA1 be used in LTE applications?

Yes-its 1930–1990 MHz band covers LTE Band 2 (1930–1990 MHz) and Band 25 (1850–1915 MHz with minor retuning). Measured ACPR at 20 MHz bandwidth meets LTE ACLR requirements when operated at 11 W avg. output and 28 V, though efficiency drops ~2% versus WCDMA due to higher peak-to-average ratio.

What is the gate bias voltage required for 450 mA IDQ operation?

The typical gate-source voltage (VGS) for 450 mA quiescent drain current is 2.5 V, with a guaranteed range of 2.0–3.0 V per datasheet Section "DC Characteristics". Stable bias requires low-noise, low-drift regulation-Infineon's reference design uses a LM7805-based network with 1.2 kΩ/1.3 kΩ resistor divider and 0.001 µF bypassing.