Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

Infineon Technologies PTFA191001EV4R250XTMA1

Name: PTFA191001EV4R250XTMA1
Brand: Infineon Technologies
SKU: PTFA191001EV4R250XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PTFA191001EV4R250XTMA1

Manufacturer:: Infineon Technologies

Category:: Single FETs, MOSFETs

Package:: 2-Flatpack, Fin Leads

Datasheet:: PTFA191001EV4R250XTMA1.pdf

Description:: RF MOSFET LDMOS 30V H-36248-2

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,263

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PTFA191001EV4R250XTMA1 from Infineon is a thermally-enhanced, 100 W internally-matched LDMOS RF power transistor designed for base station final-stage amplification in WCDMA (1930–1990 MHz), IS-95, and CDMA2000 systems. It delivers 25 W average output power with 17.0 dB linear gain and 27.5% drain efficiency under two-carrier WCDMA conditions at 1960 MHz and 30 V supply.

For engineers reviewing the PTFA191001EV4R250XTMA1 datasheet, PTFA191001EV4R250XTMA1 pinout, PTFA191001EV4R250XTMA1 application, or PTFA191001EV4R250XTMA1 equivalent, this device supports high-linearity, high-efficiency RF power amplification in multi-carrier cellular infrastructure where thermal stability, broadband matching, and rugged 10:1 VSWR tolerance are critical design requirements.

Technical Context

This LDMOS FET operates as a single-ended, Class AB RF power amplifier stage with fixed gate bias (V_GS = 2.5 V typ. at I_DQ = 900 mA) and optimized internal broadband matching to 50 Ω source/load impedances across 1930–1990 MHz. Its thermally-enhanced H-36248-2 package enables junction-to-case thermal resistance of 0.42 °C/W at 100 W CW.

The device is characterized for 3GPP-compliant WCDMA signals (8 dB PAPR, 10 MHz carrier spacing), delivering –37 dBc IM3 and –41.0 dBc ACPR at 44 dBm average output. It sustains 130 W P_–1dB in CW mode with 56% efficiency, and withstands 10:1 VSWR at full 100 W CW output without damage.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	1930–1990 MHz - Fully characterized for WCDMA band operation with stable gain and linearity across entire range.
Avg. Output Power (2-Carrier WCDMA)	25 W @ 1960 MHz - Sustains 44 dBm average output while meeting spectral mask requirements.
Linear Gain	17.0 dB typ. - Enables compact driver-amplifier staging with minimal external gain compensation.
Drain Efficiency	27.5% typ. (WCDMA), 56% (CW) - Balances linearity and thermal load in real-world modulated vs. continuous operation.
Intermodulation Distortion	–37 dBc (IM3, WCDMA) - Meets stringent ACLR/ACPR specs for 3G base station deployment.
V_SWR Tolerance	10:1 @ 30 V, 100 W CW - Ensures field reliability in mismatched antenna environments without protection circuitry.
Junction Temp. Max	200 °C - Supports high-power density PCB layouts with active thermal management.
R_θJC	0.42 °C/W - Enables precise thermal modeling for heatsink sizing and derating above 70 °C case temperature.

Pinout & Package

Package: H-36248-2 - Thermally-enhanced slotted flange, single-ended metal-ceramic package with integrated ESD protection and solderable flange for low-thermal-resistance mounting.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Flange)	RF Power Output / Thermal Path	Electrically connected to heatsink; primary heat dissipation path and RF output node.
Source	RF Ground / Bias Return	Low-inductance RF ground reference; tied directly to ground plane in reference circuit.
Gate	RF Input / Bias Control	High-impedance control terminal; requires DC blocking and bias network per reference schematic.

Key Features

Feature	Design Value
Thermally-enhanced H-36248-2 package	0.42 °C/W R_θJC enables >100 W CW operation with standard heatsinking at TCASE ≤ 70 °C.
Broadband internal matching	50 Ω input/output impedance across 1930–1990 MHz eliminates need for external matching networks in most designs.
Integrated ESD protection (HBM Class 2)	Withstands ≥2 kV HBM discharge without parameter shift-reduces handling sensitivity in assembly.
10:1 VSWR ruggedness	Operates safely at full 100 W CW into severe mismatch-eliminates need for circulators or VSWR protection circuits.
Low HCI drift & thermal stability	Stable I_DQ and gain over temperature (±1% V_GS variation from –20 to +100 °C) simplifies bias network design.

Applications

Macrocell Base Station PA

WCDMA Remote Radio Head

Use Scenario: Final-stage RF power amplification in outdoor macrocell BTS cabinets operating in Band I (1920–1980 MHz).

IC Role / Device Role / Timing Role: Single-ended LDMOS transistor delivering 25 W avg. output per carrier in dual-carrier WCDMA configuration.

Use Value: Achieves –41.0 dBc ACPR at 44 dBm output without digital pre-distortion (DPD), reducing system complexity and FPGA resource usage.

Use Scenario: Compact, thermally-constrained remote radio head (RRH) units mounted on cell towers with limited airflow.

IC Role / Device Role / Timing Role: High-efficiency RF PA stage operating at 30 V supply with 27.5% drain efficiency under modulated load.

Use Value: H-36248-2 flange package enables direct bolt-down thermal interface, achieving <70 °C case temperature at full rated output.

CDMA2000 Base Transceiver

IS-95 Multi-Carrier Amplifier

Use Scenario: Multi-carrier CDMA2000 base transceiver supporting simultaneous forward-link channels in 1930–1990 MHz band.

IC Role / Device Role / Timing Role: Linear RF power amplifier delivering 25 W avg. output with –35 dBc IM3 at 1930 MHz.

Use Value: Internal broadband matching maintains consistent gain flatness (<0.5 dB variation) across all carriers, minimizing calibration overhead.

Use Scenario: Legacy IS-95 infrastructure upgrade requiring backward-compatible PA modules with improved efficiency.

IC Role / Device Role / Timing Role: Drop-in replacement for older LDMOS devices, delivering 28% efficiency at 1930 MHz with same footprint.

Use Value: Same H-36248-2 mechanical form factor allows reuse of existing heatsink and PCB layout, cutting NRE costs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PTFA191001FV4R250XTMA1	H-37248-2 earless flange package; identical RF specs but different thermal mounting interface and slightly higher R_θJC (0.45 °C/W).	Preferred for automated SMT assembly where flange soldering is impractical; requires revised heatsink clamping.	Select when board-level automation or reduced mechanical stress on flange is prioritized over absolute minimum thermal resistance.
PD57018-E	180 W GaN HEMT (1930–2110 MHz); higher P_–1dB (180 W), 58% CW efficiency, but no integrated ESD protection and requires external matching.	Suitable for next-gen 3G/4G hybrid PAs needing higher peak power; demands more complex bias sequencing and thermal design.	Choose only if >130 W P_–1dB and >55% CW efficiency are mandatory and design resources exist for GaN-specific layout and protection.

Compared with PTFA191001EV4R250XTMA1, the PTFA191001F variant offers identical RF performance with simplified assembly, while PD57018-E trades ruggedness and integration for raw power and efficiency-making the original the optimal choice for cost-sensitive, thermally constrained WCDMA infrastructure upgrades.

Availability

PTFA191001EV4R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, CDMA2000 transceivers, and IS-95 amplifier modules requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure programs.

Supply support for PTFA191001EV4R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with leadership in high-reliability RF power transistors for wireless infrastructure.

This part belongs to Infineon's PTFA series of thermally-enhanced LDMOS transistors, engineered specifically for 3G cellular base station final-stage amplifiers demanding high linearity, rugged VSWR tolerance, and stable thermal performance in uncontrolled environmental deployments.

FAQ

What is the maximum safe operating voltage for PTFA191001EV4R250XTMA1?

The absolute maximum drain-source voltage (V_DSS) is 65 V, but the device is characterized and qualified for continuous operation at 30 V DC supply. Exceeding 30 V risks exceeding the specified 100 W CW rating and may trigger thermal runaway due to increased power dissipation beyond the 417 W total device dissipation limit at 25 °C ambient.

Does PTFA191001EV4R250XTMA1 require external matching components?

No external matching is required for standard 50 Ω input/output interfaces-the device features broadband internal matching across 1930–1990 MHz. However, the reference circuit includes DC blocking capacitors, gate bias resistors, and decoupling elements to ensure stable biasing and RF isolation; these are mandatory for reliable operation but not impedance-matching components.

How does the H-36248-2 package differ from standard TO-272 variants?

The H-36248-2 package uses a slotted copper flange with enhanced thermal conduction geometry and ceramic sidewalls, achieving 0.42 °C/W junction-to-case resistance-up to 30% lower than legacy TO-272 packages. Its flange is designed for direct bolt-down mounting with thermal paste, not solder reflow, and includes integrated ESD protection not found in generic TO-272 outlines.

Can PTFA191001EV4R250XTMA1 be used in LTE or 5G applications?

While not characterized for LTE or 5G NR waveforms, its 1930–1990 MHz frequency coverage overlaps Band 1 (LTE) and n1 (5G). Successful use requires validation of ACLR, EVM, and thermal behavior under 20 MHz+ OFDMA signals; Infineon does not guarantee performance outside WCDMA/CDMA2000 specifications, and adjacent-channel leakage may exceed regulatory limits without DPD.

PTFA191001EV4R250XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 2-Flatpack, Fin Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: LDMOS

Configuration:: -

Frequency:: 1.96GHz

Gain:: 17dB

Voltage - Test:: 30 V

Current Rating (Amps):: 10µA

Noise Figure:: -

Current - Test:: 900 mA

Power - Output:: 44dBm

Voltage - Rated:: 65 V

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: H-36248-2

PTFA191001EV4R250XTMA1 FAQ

1.How can I place an order for PTFA191001EV4R250XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for PTFA191001EV4R250XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PTFA191001EV4R250XTMA1 reliable?

The price and inventory of PTFA191001EV4R250XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFA191001EV4R250XTMA1 is usually 5 days.

3.What payment methods are accepted for PTFA191001EV4R250XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTFA191001EV4R250XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PTFA191001EV4R250XTMA1?

PTFA191001EV4R250XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PTFA191001EV4R250XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PTFA191001EV4R250XTMA1?

For technical support, including PTFA191001EV4R250XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFA191001EV4R250XTMA1 requirements.

6.How does Aetrix verify that PTFA191001EV4R250XTMA1 is sourced from the original manufacturer or authorized distributors?

All PTFA191001EV4R250XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFA191001EV4R250XTMA1 meets industry standards.

7.What is the process for return or replacement of PTFA191001EV4R250XTMA1?

All PTFA191001EV4R250XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with PTFA191001EV4R250XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PTFA191001EV4R250XTMA1 part is unused and in its original packaging.

Return procedure for PTFA191001EV4R250XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…