Infineon Technologies PTFA191001EV4XWSA1

Overview

PTFA191001EV4XWSA1 from Infineon is a thermally-enhanced, 100-W LDMOS RF power transistor designed for base station final-stage amplification in WCDMA (1930–1990 MHz), IS-95, and CDMA2000 systems. It delivers 25 W average output power, 17.0 dB linear gain, and 27.5% drain efficiency under two-carrier WCDMA conditions at 1960 MHz with 30 V supply and 900 mA quiescent drain current.

For engineers reviewing the PTFA191001EV4XWSA1 datasheet, PTFA191001EV4XWSA1 pinout, PTFA191001EV4XWSA1 application, or PTFA191001EV4XWSA1 equivalent, key selection criteria include broadband internal matching (1900–2020 MHz), 10:1 VSWR ruggedness at 100 W CW, integrated Class 2 HBM ESD protection, thermal resistance of 0.42 °C/W (junction-to-case), and Pb-free RoHS-compliant H-36248-2 slotted flange packaging.

Technical Context

This LDMOS FET operates as a single-ended RF power amplifier stage with internally matched 50 Ω input and output impedance across 1900–2020 MHz. Its gate bias network supports stable 2.5 V typical V_GS at 900 mA I_DQ, and its thermally enhanced package enables continuous-wave operation up to 130 W P_–1dB at 1960 MHz.

The device is characterized for multi-carrier WCDMA signal handling with 8 dB peak-to-average ratio, delivering –37 dBc third-order IMD and –41.0 dBc adjacent channel power ratio at 44 dBm average output. It sustains full 100 W CW output into 10:1 VSWR without damage, reflecting robust RF load tolerance and low HCI drift.

Key Specifications

Pinout & Package

PTFA191001EV4XWSA1 uses the H-36248-2 thermally-enhanced slotted flange package - a metal-ceramic, single-ended RF power transistor housing with isolated source tab, optimized for low thermal resistance and mechanical stability in base station PA modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA191001FV4XWSA1, the slotted flange variant offers superior thermal contact area; versus MRF6P21190HR5, PTFA191001EV4XWSA1 provides better WCDMA efficiency and lower IMD at 1960 MHz, making it optimal for dedicated 3G macrocell deployments.

Availability

PTFA191001EV4XWSA1 is available at Aetrix Electronics and suitable for macrocell base station transmitters, WCDMA infrastructure equipment, and CDMA2000 1xRTT radio units requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom OEMs.

Supply support for PTFA191001EV4XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with leadership in silicon-based RF power solutions for wireless infrastructure.

PTFA191001EV4XWSA1 belongs to Infineon's PTFA series of thermally enhanced LDMOS transistors, engineered specifically for high-efficiency, high-reliability RF power amplification in 3G cellular base stations.

FAQ

What is the maximum safe operating drain voltage for PTFA191001EV4XWSA1?

The absolute maximum drain-source voltage (V_DSS) is 65 V DC. Operation above 30 V is permitted only in pulsed or transient conditions per datasheet derating curves; sustained 30 V operation is specified for all RF performance metrics including 100 W CW output and 10:1 VSWR ruggedness.

Does PTFA191001EV4XWSA1 require external gate protection diodes?

No. The device integrates Class 2 Human Body Model (HBM) ESD protection on the gate terminal, rated to ≥2 kV. External gate protection is not required in standard PCB layouts, though proper handling precautions (grounded workstations, ionized air) remain mandatory during assembly.

Can PTFA191001EV4XWSA1 operate reliably at case temperatures above 70°C?

Yes - thermal resistance is specified at R_θJC = 0.42 °C/W with T_CASE = 70°C, but the junction temperature limit is 200°C. Derating is linear: above 25°C ambient, total dissipation must decrease by 2.38 W/°C. At 90°C case temperature, max safe CW power drops to ~85 W to maintain T_J ≤ 200°C.

Is the H-36248-2 package compatible with standard RF power transistor mounting hardware?

Yes - the H-36248-2 slotted flange uses industry-standard M3 mounting holes and 0.8 mm slot width, compatible with common heatsink clamps and thermal interface materials (e.g., T-grease, phase-change pads). Mechanical drawings confirm alignment with IPC-7351B RF power footprint guidelines.