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Infineon Technologies PTFA192001EV4R0XTMA1
- Part No.:
- PTFA192001EV4R0XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- 2-Flatpack, Fin Leads, Flanged
- Datasheet:
-
PTFA192001EV4R0XTMA1.pdf
- Description:
- RF MOSFET LDMOS 30V H-36260-2
- Quantity:
- Payment:
- Shipping:
Inventory:8,441
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Product details
Overview
PTFA192001EV4R0XTMA1 from Infineon is a thermally-enhanced 200 W LDMOS RF power transistor for 1930–1990 MHz dual-carrier WCDMA/CDMA base station amplifiers, featuring 15.9 dB linear gain, 27% drain efficiency at 47.0 dBm avg. output, and 5:1 VSWR ruggedness at 30 V CW. It uses H-36260-2 slotted-flange packaging and integrates Class 2 HBM ESD protection.
For engineers reviewing the PTFA192001EV4R0XTMA1 datasheet, PTFA192001EV4R0XTMA1 pinout, PTFA192001EV4R0XTMA1 application, or PTFA192001EV4R0XTMA1 equivalent, key selection criteria include broadband internal matching, thermal resistance of 0.28 °C/W (junction-to-case), 65 V VBRDSS rating, and verified two-tone IMD performance at –30 dBc under 200 W PEP conditions.
Technical Context
This device operates as a single-ended RF power amplifier stage in macrocell and remote radio head (RRH) transmitters. Its LDMOS process enables stable biasing across temperature (±3% VGS drift from –20°C to +100°C case), low HCI drift, and robust 5:1 VSWR tolerance without external protection circuitry.
The H-36260-2 package integrates a slotted copper flange with optimized thermal path to heatsink, supporting continuous 200 W CW dissipation at TCASE = 70°C. Internal broadband matching covers 1860–2040 MHz, eliminating need for external input/output tuning networks in standard 1960 MHz WCDMA deployments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBRDSS | 65 V - Withstands transient overvoltage up to 63 V without breakdown during VSWR stress events |
| POUT (2-Carrier WCDMA) | 47.0 dBm avg. - Delivers 50 W RF output into 50 Ω load with 8 dB PAR, meeting 3GPP channel mask requirements |
| Linear Gain | 15.9 dB - Provides sufficient small-signal gain to drive final stage without intermediate amplification |
| Drain Efficiency | 27% @ 47 dBm - Reduces DC power draw and thermal load in multi-carrier base station PA modules |
| IMD (2-Tone) | –30 dBc @ 200 W PEP - Meets spectral purity requirements for adjacent channel leakage ratio (ACLR) compliance |
| RθJC | 0.28 °C/W - Enables direct mounting to heatsink with minimal thermal interface resistance for stable long-term operation |
| VSWR Tolerance | 5:1 @ 30 V, 200 W CW - Eliminates need for external circulators or isolators in antenna mismatch scenarios |
Pinout & Package
H-36260-2 is a thermally-enhanced slotted-flange, single-ended metal-ceramic package with isolated source tab and integrated gate protection diodes. Flange mounting ensures low thermal resistance and mechanical stability in high-vibration RF environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Flange) | RF Power Output / Heat Sink Interface | Electrically connected to flange; must be DC-grounded and thermally coupled to heatsink |
| Source (Tab) | RF Ground Reference / Current Return Path | Isolated metal tab requiring separate low-inductance ground connection to minimize common-impedance coupling |
| Gate (Lead) | RF Input Control Terminal | ESD-protected terminal accepting 2.5 V typical bias; requires series gate resistor for stability in broadband operation |
Key Features
| Feature | Design Value |
|---|---|
| Broadband internal matching | Eliminates discrete matching networks across 1860–2040 MHz, reducing PCB area and assembly cost |
| Thermally-enhanced slotted flange | Enables 200 W CW operation with RθJC = 0.28 °C/W, supporting compact RRH thermal designs |
| Integrated Class 2 HBM ESD protection | Withstands ≥2 kV human-body-model discharge without gate oxide damage during handling and assembly |
| 5:1 VSWR ruggedness | Operates safely under antenna detuning or cable fault conditions without external protection components |
| Low HCI drift | Maintains stable gain and efficiency over 10-year field life in continuous macrocell deployment |
Applications
| Macrocell Base Station Transmitter | Remote Radio Head (RRH) |
|---|---|
Use Scenario: High-power outdoor cellular base station operating in 1930–1990 MHz band with dual-carrier WCDMA modulation and 8 dB peak-to-average ratio. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 50 W average output per carrier into 50 Ω load. Use Value: Achieves 27% drain efficiency and –36 dBc ACPR without digital pre-distortion (DPD) compensation, simplifying system architecture. | Use Scenario: Compact, weatherized outdoor unit mounted directly on cell tower, requiring high thermal density and vibration resilience. IC Role / Device Role / Timing Role: Single-ended LDMOS PA core enabling full 200 W PEP capability within tight mechanical envelope. Use Value: Slotted-flange package allows direct bolt-down to aluminum heatsink with <0.3 °C/W total thermal resistance, enabling passive cooling. |
| CDMA2000 Baseband Amplifier | Multi-Standard BTS Front-End |
Use Scenario: Legacy CDMA2000 1xRTT infrastructure upgrade where backward compatibility and spectral mask compliance are critical. IC Role / Device Role / Timing Role: Linear RF power stage supporting 1.23 MHz channel bandwidth and 20 dB dynamic range. Use Value: Delivers –41 dBc adjacent channel power ratio at 30 V supply, meeting IS-97-D spectral emission limits. | Use Scenario: Reconfigurable base transceiver station supporting WCDMA, LTE, and CDMA modes via software-defined front-end. IC Role / Device Role / Timing Role: Broadband PA core covering 1860–2040 MHz with consistent gain flatness ±0.5 dB. Use Value: Internal matching eliminates band-switching matching networks, reducing component count and calibration complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PTFA192001FV4R0XTMA1 | Same die, earless flange (H-37260-2); RθJC = 0.31 °C/W; no mounting slot | Suitable for automated SMT assembly with solder-reflow compatible flange; lower mechanical rigidity under vibration | Select for volume production with pick-and-place placement and reflow soldering; avoid in high-vibration macrocell sites |
| PD57018-E | 180 W, 1930–2110 MHz; 15.5 dB gain; 29% efficiency; SO-8 package with exposed drain pad | Lower power rating but smaller footprint; requires external matching; not VSWR-rugged | Choose for space-constrained LTE small cells where 5:1 VSWR tolerance is not required and DPD is implemented |
Compared with PTFA192001FV4R0XTMA1, the slotted flange offers superior mechanical retention and thermal contact consistency; versus PD57018-E, PTFA192001EV4R0XTMA1 delivers higher output power, ruggedness, and integrated matching-critical for unattended macrocell deployments.
Availability
PTFA192001EV4R0XTMA1 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, and CDMA2000 infrastructure requiring stable component supply, long-lifecycle support, and proven field reliability in outdoor RF power applications.
Supply support for PTFA192001EV4R0XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power transistors for wireless infrastructure.
This part belongs to Infineon's PTFA series of thermally-enhanced LDMOS FETs, designed specifically for 3G/4G macrocell and RRH power amplifiers operating between 1800–2200 MHz.
FAQ
What is the maximum safe operating junction temperature for PTFA192001EV4R0XTMA1?
The absolute maximum junction temperature is 200°C, but continuous operation above 175°C degrades long-term reliability. The device is characterized for stable performance up to 150°C junction temperature under 200 W CW conditions with proper heatsinking and airflow per the H-36260-2 thermal design guidelines.
Does PTFA192001EV4R0XTMA1 require external gate bias sequencing?
No external sequencing is required. The device operates with a single 30 V drain supply and a fixed 2.5 V typical gate bias (VGS = 2.0–3.0 V). Gate current remains below 1 µA, allowing simple resistive bias networks without active regulation or soft-start circuitry.
Can PTFA192001EV4R0XTMA1 be used in pulsed radar applications?
It is not characterized or qualified for pulsed radar duty cycles. The datasheet specifies only CW, WCDMA, and CDMA waveforms. Pulse operation introduces different thermal transients and voltage overshoot risks not validated by Infineon, and the 5:1 VSWR rating applies only to CW conditions.
Is the H-36260-2 package RoHS-compliant and lead-free?
Yes. The PTFA192001EV4R0XTMA1 uses Pb-free terminations and complies with EU RoHS Directive 2011/65/EU. The slotted flange is nickel-plated copper with gold-plated lead, and all die attach and molding compounds meet halogen-free and REACH requirements.
PTFA192001EV4R0XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 2-Flatpack, Fin Leads, Flanged
- Packaging:
- Strip
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.93GHz ~ 1.99GHz
- Gain:
- 15.9dB
- Voltage - Test:
- 30 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 1.6 A
- Power - Output:
- 200W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- H-36260-2
PTFA192001EV4R0XTMA1 FAQ
1.How can I place an order for PTFA192001EV4R0XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTFA192001EV4R0XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTFA192001EV4R0XTMA1 reliable?
The price and inventory of PTFA192001EV4R0XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFA192001EV4R0XTMA1 is usually 5 days.
3.What payment methods are accepted for PTFA192001EV4R0XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTFA192001EV4R0XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTFA192001EV4R0XTMA1?
PTFA192001EV4R0XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTFA192001EV4R0XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTFA192001EV4R0XTMA1?
For technical support, including PTFA192001EV4R0XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFA192001EV4R0XTMA1 requirements.
6.How does Aetrix verify that PTFA192001EV4R0XTMA1 is sourced from the original manufacturer or authorized distributors?
All PTFA192001EV4R0XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFA192001EV4R0XTMA1 meets industry standards.
7.What is the process for return or replacement of PTFA192001EV4R0XTMA1?
All PTFA192001EV4R0XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with PTFA192001EV4R0XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTFA192001EV4R0XTMA1 part is unused and in its original packaging.
Return procedure for PTFA192001EV4R0XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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