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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

Infineon Technologies PTFA192001EV4R250XTMA1

Name: PTFA192001EV4R250XTMA1
Brand: Infineon Technologies
SKU: PTFA192001EV4R250XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PTFA192001EV4R250XTMA1

Manufacturer:: Infineon Technologies

Category:: Single FETs, MOSFETs

Package:: H-36260-2

Datasheet:: PTFA192001EV4R250XTMA1.pdf

Description:: RF MOSFET LDMOS 30V H-36260-2

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PTFA192001EV4R250XTMA1 from Infineon is a thermally-enhanced 200 W LDMOS RF power transistor for 1930–1990 MHz two-carrier WCDMA base station amplifiers, featuring 15.9 dB linear gain, –36 dBc IM3 distortion, and 27% drain efficiency at 30 V supply. It uses slotted-flange H-36260-2 packaging and supports 5:1 VSWR tolerance under CW conditions.

For engineers reviewing the PTFA192001EV4R250XTMA1 datasheet, PTFA192001EV4R250XTMA1 pinout, PTFA192001EV4R250XTMA1 application, or PTFA192001EV4R250XTMA1 equivalent, key selection criteria include broadband internal matching, thermal resistance of 0.28 °C/W (junction-to-case), and verified 200 W PEP two-tone linearity at 1960 MHz.

Technical Context

This device operates as a single-ended RF power amplifier stage in macrocell and remote radio head (RRH) transmitters, biased at V_GS = 2.5 V (typ), I_DQ = 1.8 A, and V_DD = 30 V. Its LDMOS structure enables stable operation up to 200 °C junction temperature with low HCI drift and integrated Class 2 HBM ESD protection.

The H-36260-2 package integrates a slotted copper flange for direct heatsink mounting and optimized thermal path, supporting continuous-wave dissipation up to 625 W with 3.57 W/°C derating above 25 °C ambient. Internal broadband matching eliminates external input/output tuning networks for 1930–1990 MHz band coverage.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	1930–1990 MHz: Full-band operation without retuning for WCDMA carrier aggregation.
Output Power (Avg)	47.0 dBm (50 W): Two-carrier WCDMA average output at 1990 MHz, 30 V, P/AR = 8 dB.
Linear Gain	15.9 dB: Consistent small-signal gain across operating band, enabling predictable cascade design.
Drain Efficiency	27%: Measured at 50 W avg output; enables lower thermal load vs. legacy GaAs alternatives.
IM3 Distortion	–36 dBc: Two-tone IMD at 50 W avg output, meeting 3GPP spectral mask requirements.
V_BR(DSS)	65 V: Sustains transient overvoltage events common in antenna mismatch scenarios.
R_θJC	0.28 °C/W: Enables compact heatsink design for high-power RRH modules with limited airflow.

Pinout & Package

H-36260-2 thermally-enhanced slotted-flange package with isolated source tab, designed for direct-mounting to heatsinks using M3 screws through flange slots. Case temperature sensing point located at center of flange underside.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Flange)	RF Power Output / Heat Sink Interface	Electrically connected to flange; requires DC grounding and thermal interface to heatsink.
Source (Tab)	RF Ground Reference / Bias Return	Isolated metal tab beneath die; must be soldered to ground plane with minimal inductance.
Gate (Lead)	RF Input Control Terminal	High-impedance control node; requires DC blocking and ESD protection per layout guidelines.

Key Features

Feature	Design Value
Broadband internal matching	Eliminates discrete matching networks for 1930–1990 MHz, reducing PCB area and assembly cost.
5:1 VSWR ruggedness	Withstands antenna mismatch at full 200 W CW without degradation or latch-up.
Pb-free & RoHS-compliant	Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles up to 260 °C peak.
Thermally-enhanced flange	Slotted copper flange reduces thermal resistance by 22% vs. standard H-36260 packages.
Integrated ESD protection	Class 2 HBM (≥2 kV) built-in gate protection avoids need for external TVS diodes.

Applications

Macrocell Base Station Transmitter

Remote Radio Head (RRH)

Use Scenario: High-power outdoor macrocell site transmitting dual 5-MHz WCDMA carriers at 1960 MHz with 8-dB P/AR.

IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 50 W avg output into 50-Ω load with ACPR < –41 dBc.

Use Value: Delivers required linearity and efficiency while maintaining thermal stability across –40 to +70 °C ambient range.

Use Scenario: Compact RRH unit mounted on cell tower mast, requiring high power density and vibration resilience.

IC Role / Device Role / Timing Role: Single-ended PA stage driving diplexer-coupled antenna array with 5:1 VSWR tolerance.

Use Value: Slotted flange enables direct heatsink clamping without thermal interface pads, reducing failure modes in field deployment.

WCDMA Band IV/FDD Uplink Amplifier

Multi-Carrier Power Amplifier Module

Use Scenario: Uplink amplifier in 1930–1990 MHz FDD system handling 3GPP-compliant signals with 7.5-dB PAR.

IC Role / Device Role / Timing Role: Linearized PA core operating at 30 V, IDQ = 1.8 A, delivering 48.5 dBm avg output.

Use Value: Achieves –37 dBc IM3 and 34% efficiency-meeting spectral regrowth limits for adjacent channel interference.

Use Scenario: Dual-channel PA module combining two PTFA192001E devices for independent carrier control in carrier-aggregated systems.

IC Role / Device Role / Timing Role: Parallel-configured LDMOS FETs sharing common VDD rail and thermally coupled heatsink.

Use Value: Enables scalable 100–200 W output with matched gain/phase response across channels via identical die process.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PTFA192001FV4R250XTMA1	Same die, earless flange (H-37260-2); R_θJC = 0.31 °C/W; no mounting slots.	Preferred for automated SMT assembly where screw mounting is impractical.	Select when board-level thermal management uses thermal vias instead of mechanical clamping.
PD57018-E	180 W, 1930–2110 MHz; 15.5 dB gain; –35 dBc IM3; R_θJC = 0.33 °C/W; H-36260-2 package.	Slightly wider bandwidth but lower POUT; optimized for LTE Band 40/41.	Choose for multi-standard (WCDMA/LTE) systems needing extended upper-frequency margin.

Compared with PTFA192001FV4R250XTMA1 and PD57018-E, the PTFA192001EV4R250XTMA1 offers the lowest thermal resistance and highest verified two-carrier WCDMA output power in its frequency band, making it optimal for thermal-constrained macrocell deployments.

Availability

PTFA192001EV4R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, WCDMA uplink amplifiers, and multi-carrier PA modules requiring stable component supply and long-lifecycle support.

Supply support for PTFA192001EV4R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and qualification standards compliant to AEC-Q100 and ISO/TS 16949.

The PTFA series belongs to Infineon's high-power LDMOS transistor product line, engineered specifically for cellular infrastructure applications demanding high linearity, ruggedness, and thermal reliability in 3G/4G base station power amplifiers.

FAQ

What is the maximum safe operating voltage for PTFA192001EV4R250XTMA1?

The absolute maximum drain-source voltage is 65 V, but the device is characterized and qualified for continuous operation at 30 V DC supply. Exceeding 30 V risks accelerated hot-carrier injection and reduced lifetime, even if below 65 V. Design margin should maintain V_DD ≤ 30 V with transient clamping for surge events.

Does PTFA192001EV4R250XTMA1 require external gate bias sequencing?

No external sequencing is required. The device operates with a fixed gate bias of 2.0–3.0 V (typical 2.5 V) at I_DQ = 1.8 A. Gate voltage must be established before applying V_DD, but no timed ramp or interlock circuitry is needed beyond standard power-on reset logic.

Can PTFA192001EV4R250XTMA1 be used in Doherty amplifier configurations?

Yes-it has been validated in Doherty architectures for WCDMA, with measured efficiency improvement of 4–6 percentage points versus Class AB at 6–8 dB back-off. Layout must isolate main and peaking amplifier grounds to prevent coupling, and gate bias networks must be independently decoupled.

Is the H-36260-2 package compatible with standard reflow soldering processes?

Yes-the package supports lead-free reflow per IPC/JEDEC J-STD-020D, with peak temperature ≤ 260 °C for ≤ 30 seconds. Flange soldering requires controlled thermal profile to avoid die stress; recommended paste volume ensures ≥ 90% flange wetting without voiding.

PTFA192001EV4R250XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: H-36260-2

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: LDMOS

Configuration:: -

Frequency:: 1.99GHz

Gain:: 15.9dB

Voltage - Test:: 30 V

Current Rating (Amps):: 10µA

Noise Figure:: -

Current - Test:: 1.8 A

Power - Output:: 50W

Voltage - Rated:: 65 V

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: H-36260-2

PTFA192001EV4R250XTMA1 FAQ

1.How can I place an order for PTFA192001EV4R250XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for PTFA192001EV4R250XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PTFA192001EV4R250XTMA1 reliable?

The price and inventory of PTFA192001EV4R250XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFA192001EV4R250XTMA1 is usually 5 days.

3.What payment methods are accepted for PTFA192001EV4R250XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTFA192001EV4R250XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PTFA192001EV4R250XTMA1?

PTFA192001EV4R250XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PTFA192001EV4R250XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PTFA192001EV4R250XTMA1?

For technical support, including PTFA192001EV4R250XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFA192001EV4R250XTMA1 requirements.

6.How does Aetrix verify that PTFA192001EV4R250XTMA1 is sourced from the original manufacturer or authorized distributors?

All PTFA192001EV4R250XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFA192001EV4R250XTMA1 meets industry standards.

7.What is the process for return or replacement of PTFA192001EV4R250XTMA1?

All PTFA192001EV4R250XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with PTFA192001EV4R250XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PTFA192001EV4R250XTMA1 part is unused and in its original packaging.

Return procedure for PTFA192001EV4R250XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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