Infineon Technologies PTFA192001EV4XWSA1

Overview

PTFA192001EV4XWSA1 from Infineon is a thermally-enhanced 200 W LDMOS RF power transistor designed for single- and two-carrier WCDMA base station final-stage amplification in the 1930–1990 MHz band. It delivers 48.5 dBm average output power, 15.9 dB linear gain, and 34% drain efficiency at 1960 MHz under 3GPP WCDMA signal (P/AR = 7.5 dB), with integrated ESD protection (HBM Class 2) and 5:1 VSWR ruggedness.

For engineers reviewing the PTFA192001EV4XWSA1 datasheet, PTFA192001EV4XWSA1 pinout, PTFA192001EV4XWSA1 application, or PTFA192001EV4XWSA1 equivalent, key selection criteria include broadband internal matching, thermal resistance of 0.28 °C/W (at 200 W CW), junction temperature rating up to 200 °C, and verified two-tone IMD performance of –30 dBc at 1960 MHz.

Technical Context

This device operates as a high-efficiency RF power amplifier stage in macrocell and distributed antenna systems, biased at V_DD = 30 V and I_DQ = 1.6–1.8 A. Its LDMOS process enables stable gain flatness (±0.6 dB) across 1860–2040 MHz and low HCI drift under sustained RF stress.

The H-36260-2 package features a slotted flange for mechanical mounting and thermal interface optimization, supporting DC-to-RF coupling via microstrip reference design on Rogers RO4350B substrate (ε_r = 3.48). Input/output matching networks are integrated, eliminating external tuning for standard 50 Ω systems.

Key Specifications

Pinout & Package

H-36260-2 is a thermally-enhanced, slotted-flange, single-ended RF power package with copper-molybdenum-copper (CuMoCu) baseplate and solderable source-tab for low-inductance grounding and efficient heat transfer. The flange is electrically connected to the source terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA192001FV4XWSA1, this part offers slightly better thermal resistance and mechanical mounting flexibility; versus PD57018-E, it delivers +0.5 dB gain and +0.5 dBm output at WCDMA-specific frequencies but lacks LTE-optimized linearity and qualification data.

Availability

PTFA192001EV4XWSA1 is available at Aetrix Electronics and suitable for macrocell base station PA, DAS headend amplification, and WCDMA repeater systems requiring stable component supply and legacy infrastructure support.

Supply support for PTFA192001EV4XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-voltage and high-frequency silicon and GaN solutions.

This part belongs to Infineon's PTFA series of thermally robust LDMOS RF power transistors, engineered specifically for cellular infrastructure applications demanding high linearity, ruggedness, and long-term reliability under continuous RF stress.

FAQ

What is the recommended gate bias voltage for PTFA192001EV4XWSA1 in WCDMA operation?

The typical gate-source voltage is 2.5 V at I_DQ = 1.8 A and V_DD = 30 V. This value is confirmed in the DC characteristics table (V_GS = 2.0–3.0 V range) and validated across temperature in the bias voltage vs. temperature plot. Stable operation requires a low-noise, well-regulated bias supply with < 10 mV ripple to prevent gain modulation.

Can PTFA192001EV4XWSA1 be used in LTE applications?

Yes - its 1930–1990 MHz small-signal gain flatness (±0.6 dB) and ACPR performance (–41 dBc at 5 MHz offset) meet LTE Band 1 (1920–1980 MHz) requirements. However, it was characterized for WCDMA; LTE-specific linearity validation (EVM, ACLR) must be performed in the target application circuit per 3GPP TS 36.104.

What is the maximum safe operating drain current at 25°C case temperature?

At T_CASE = 25°C, the absolute maximum drain current is limited by the 625 W total device dissipation rating and V_DD = 30 V, yielding I_D(max) ≈ 20.8 A. However, the datasheet specifies I_DQ = 1.6–1.8 A for linear operation; pulsed or CW operation above 2.2 A risks exceeding junction temperature limits unless heatsinking is significantly enhanced.

Is the H-36260-2 package RoHS-compliant?

Yes - the datasheet explicitly states "Pb-free, RoHS-compliant and thermally-enhanced packages" for both PTFA192001E and PTFA192001F variants. The flange plating and die attach materials meet EU Directive 2011/65/EU Annex II substance restrictions, including Cd, Pb, Hg, Cr(VI), PBB, and PBDE.