Infineon Technologies PTFA192401EV4R250FTMA1

Overview

PTFA192401EV4R250FTMA1 from Infineon is a thermally-enhanced 240 W LDMOS RF power transistor for single- and two-carrier WCDMA/CDMA base station final-stage amplification at 1930–1990 MHz. It delivers 49 dBm average output power, 16 dB linear gain, and 33% drain efficiency under 3GPP WCDMA conditions (30 V, PAR = 8.5 dB), with integrated ESD protection (HBM Class 2) and 5:1 VSWR ruggedness.

For engineers reviewing the PTFA192401EV4R250FTMA1 datasheet, PTFA192401EV4R250FTMA1 pinout, PTFA192401EV4R250FTMA1 application, or PTFA192401EV4R250FTMA1 equivalent, this device is selected for high-linearity, high-efficiency RF power amplification in macrocell and remote radio head (RRH) transceivers where thermal stability, broadband matching, and intermodulation performance are critical.

Technical Context

This LDMOS FET operates as a Class AB RF power amplifier stage with fixed gate bias (V_GS = 2.5 V typ. at I_DQ = 1.6 A), optimized for 30 V DC supply and broadband impedance matching (Z_in ≈ 7.6 Ω – j7.5 Ω, Z_out ≈ 0.76 Ω + j3.84 Ω at 1960 MHz). Its internal matching eliminates external input/output tuning networks in typical 1960 MHz reference designs.

The device uses Infineon's advanced LDMOS process to achieve low HCI drift, R_θJC = 0.23 °C/W, and junction temperature rating up to 200 °C-enabling stable operation under high-PAR WCDMA signals and sustained 240 W CW output with 54% efficiency.

Key Specifications

Pinout & Package

PTFA192401EV4R250FTMA1 is housed in the H-36260-2 thermally-enhanced slotted-flange package-a metal-ceramic hybrid with isolated source tab, flanged base for mechanical mounting and thermal conduction, and three terminals: Drain (flange), Source (tab), and Gate (lead).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with PTFA192401FV4R250FTMA1, the subject part offers lower thermal resistance and proven slotted-flange reliability in fielded macrocell systems; versus PD57018-E, it provides superior VSWR tolerance and integrated ESD protection-critical for unattended outdoor deployments.

Availability

PTFA192401EV4R250FTMA1 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, CDMA uplink amplifiers, and RF test instrumentation requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure programs.

Supply support for PTFA192401EV4R250FTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with leadership in high-voltage and high-frequency silicon and GaN power devices.

This part belongs to Infineon's PTFA series of thermally-enhanced LDMOS RF power transistors, designed specifically for 3G/4G cellular infrastructure amplifiers demanding high efficiency, linearity, and ruggedness in harsh thermal environments.

FAQ

What is the recommended gate bias voltage and quiescent current for PTFA192401EV4R250FTMA1?

The device is characterized at V_GS = 2.5 V (typical) to achieve I_DQ = 1600 mA under V_DD = 30 V. Bias must be stabilized using low-temperature-coefficient resistors or active regulation, as gate threshold exhibits ±0.5 V variation across temperature and unit-to-unit. The reference circuit uses a 2 kΩ potentiometer (R8) for fine-tuning.

Does PTFA192401EV4R250FTMA1 require external input/output matching networks?

No-this device features broadband internal matching optimized for 1930–1990 MHz. The reference design (Data Sheet p.7) shows only DC blocking and decoupling components; no discrete matching inductors or capacitors are needed at RF input or output ports for standard 50 Ω system integration.

What is the maximum safe operating drain-source voltage for continuous operation?

V_DSS is rated at 65 V, but safe continuous operation requires limiting V_DS to ≤30 V under all conditions-including transient overshoots-due to the specified 30 V DC supply and thermal derating curve (761 W max dissipation, derated 4.35 W/°C above 25°C case temperature).

How is thermal performance validated for PTFA192401EV4R250FTMA1 in real-world deployment?

Thermal resistance R_θJC = 0.23 °C/W is measured per JESD51-14 with TCASE = 70°C and 50 W WCDMA output. Field validation includes 1000-hour accelerated life testing at 150°C junction temperature and 5:1 VSWR stress cycles, confirming <1% gain shift and no parametric drift under telecom-grade reliability standards.