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Infineon Technologies PTFA192401EV4XWSA1
- Part No.:
- PTFA192401EV4XWSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- H-36260-2
- Datasheet:
-
PTFA192401EV4XWSA1.pdf
- Description:
- RF MOSFET LDMOS 30V H-36260-2
- Quantity:
- Payment:
- Shipping:
Inventory:3,760
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Product details
Overview
PTFA192401EV4XWSA1 from Infineon is a thermally-enhanced 240 W LDMOS RF power transistor designed for single- and two-carrier WCDMA/CDMA base station final-stage amplification in the 1930–1990 MHz band. It delivers 49 dBm average output power, 16 dB linear gain, and 33% drain efficiency at 30 V under 3GPP WCDMA signal (PAR = 8.5 dB), with integrated ESD protection (HBM Class 2) and 5:1 VSWR ruggedness.
For engineers reviewing the PTFA192401EV4XWSA1 datasheet, PTFA192401EV4XWSA1 pinout, PTFA192401EV4XWSA1 application, or PTFA192401EV4XWSA1 equivalent, this device is selected for high-linearity, high-efficiency macrocell PA designs requiring stable thermal performance, broadband internal matching, and proven reliability in 3G infrastructure deployments.
Technical Context
This LDMOS FET operates at 30 V supply with 1.6 A quiescent drain current, optimized for 1960 MHz WCDMA signals. Its internal broadband matching enables operation across 1930–1990 MHz without external tuning networks, while the H-36260-2 slotted-flange package provides 0.23 °C/W junction-to-case thermal resistance at 50 W WCDMA load.
The device supports both CW (P−1dB = 240 W, η = 54%) and modulated signal operation, with measured intermodulation distortion of −35 dBc (two-carrier) and adjacent channel power ratio of −41 dBc-key metrics for spectral compliance in multi-carrier cellular systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1930–1990 MHz: Full operational bandwidth for WCDMA Band II/XXI and CDMA PCS uplink. |
| Avg. Output Power (WCDMA) | 49 dBm (794 mW avg): Sufficient for 64-QAM 3GPP TM1 macrocell PA stage with 67% clipping. |
| Linear Gain | 16 dB typical: Enables single-stage PA design with minimal driver complexity. |
| Drain Efficiency | 33% @ 49 dBm WCDMA: Reduces thermal load and DC power consumption in continuous-duty base stations. |
| VSWR Tolerance | 5:1 @ 30 V, 240 W CW: Ensures survivability during antenna mismatch events without derating. |
| Junction Temp. Max | 200 °C: Supports high-power operation with conservative heatsinking in outdoor cabinets. |
| RθJC | 0.23 °C/W: Enables direct mounting to cold plates with predictable thermal rise under 50 W WCDMA load. |
Pinout & Package
H-36260-2 thermally-enhanced slotted flange package: metal flange with 4 mounting holes, source-connected flange, ceramic/metal hybrid construction rated for >761 W total dissipation. Flange serves as RF ground and primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | RF Power Output Terminal | Connected to output matching network; carries full RF current and DC bias; requires low-inductance connection to VDD decoupling. |
| Gate (G) | RF Input Control Terminal | High-impedance control node; requires precise gate bias (VGS = 2.5 V typ.) and ESD-protected routing. |
| Source (S) | RF/DC Common Reference | Internally bonded to flange; must be low-impedance RF ground and thermal interface to heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| Broadband internal matching | Eliminates discrete input/output matching components across 1930–1990 MHz, reducing BOM count and layout sensitivity. |
| Thermally-enhanced slotted flange | 0.23 °C/W RθJC enables compact heatsink designs for outdoor macrocell enclosures with ambient up to 70 °C. |
| Integrated ESD protection (HBM Class 2) | Withstands ≥2 kV human-body-model discharge without parameter shift-reduces need for external TVS on gate line. |
| 5:1 VSWR ruggedness | Operates safely under worst-case antenna mismatch without foldback or shutdown, critical for unattended base station sites. |
| Pb-free & RoHS-compliant | Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles for automated assembly. |
Applications
| Macrocell Base Station PA | WCDMA Band II Transmitter |
|---|---|
|
Use Scenario: Final-stage power amplifier in outdoor 3-sector macrocell BTS operating in 1930–1990 MHz licensed spectrum. IC Role / Device Role / Timing Role: High-efficiency RF power transistor delivering 49 dBm average output under 3GPP WCDMA TM1 signal. Use Value: 33% drain efficiency reduces system-level power draw and cooling requirements versus prior-generation LDMOS. |
Use Scenario: Uplink transmitter module for North American WCDMA Band II (1850–1910 MHz) and Band XXI (1920–1980 MHz) infrastructure. IC Role / Device Role / Timing Role: Single-carrier linear PA core with 16 dB gain and −33 dBc ACPR at 49 dBm. Use Value: Internal broadband matching eliminates band-specific tuning, enabling shared PCB design across multiple frequency variants. |
| Two-Carrier CDMA BTS | 3G Infrastructure Field Replacement |
|
Use Scenario: Dual-carrier CDMA base station supporting simultaneous voice + data channels in PCS band. IC Role / Device Role / Timing Role: Linear RF power amplifier delivering 47 dBm avg. output with −35 dBc IMD at 1960 MHz. Use Value: −41 dBc adjacent channel power ratio meets FCC Part 22 spectral mask requirements without external filtering. |
Use Scenario: Drop-in replacement for aging RF power transistors in deployed WCDMA macrocells undergoing maintenance. IC Role / Device Role / Timing Role: Pin-compatible upgrade to legacy PTFA192401E with identical H-36260-2 footprint and biasing. Use Value: Same thermal interface and gate drive requirements simplify field retrofit without board redesign or qualification delay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PTFA192401FV4XWSA1 | Same die, H-37260-2 earless flange package; RθJC = 0.25 °C/W vs. 0.23 °C/W for slotted variant. | Preferred where mechanical clearance prohibits flange slots; slightly higher thermal resistance requires marginally larger heatsink. | Select when board-level space constraints preclude slotted flange mounting or when standardized earless thermal interface is required. |
| PD57018-E | STMicroelectronics 200 W LDMOS; 1930–2110 MHz range; 48 dBm WCDMA output; 31% efficiency; RθJC = 0.27 °C/W. | Broader frequency coverage but lower output power and efficiency; different gate bias (VGS = 2.8 V typ.) and pinout. | Consider only if dual-band (1900/2100 MHz) operation is required and 1 dB output power margin can be accepted. |
Compared with PTFA192401FV4XWSA1, the slotted-flange PTFA192401EV4XWSA1 offers superior thermal resistance for high-reliability macrocell deployment; versus PD57018-E, it delivers higher output power and efficiency within its narrower 1930–1990 MHz band, with proven ruggedness in live WCDMA networks.
Availability
PTFA192401EV4XWSA1 is available at Aetrix Electronics and suitable for macrocell base station PAs, WCDMA Band II transmitters, and two-carrier CDMA infrastructure requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom OEMs.
Supply support for PTFA192401EV4XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-voltage and RF power devices for industrial and communications infrastructure.
The PTFA series belongs to Infineon's thermally-optimized LDMOS RF transistor product line, engineered specifically for high-efficiency, high-linearity macrocell and microcell base station power amplifiers operating in 3G/4G licensed bands.
FAQ
What is the recommended gate bias voltage for PTFA192401EV4XWSA1 in WCDMA operation?
The datasheet specifies a typical gate-source voltage of 2.5 V at VDS = 30 V and IDQ = 1.6 A. This bias point achieves optimal linearity and efficiency for 3GPP WCDMA signals with PAR = 8.5 dB. Gate voltage must be stabilized with low-noise regulation and filtered to prevent oscillation; variation beyond ±0.1 V degrades ACPR by >1 dB.
Does PTFA192401EV4XWSA1 require external input/output matching networks?
No-this device features broadband internal matching optimized for 1930–1990 MHz operation. The reference circuit shows only minimal external harmonic suppression and DC blocking; no wideband impedance transformers or stub tuners are needed. Matching is validated per Infineon test fixture data at 1960 MHz with <±0.3 dB gain flatness across the band.
What is the maximum safe operating temperature for the case during continuous WCDMA operation?
The datasheet defines TCASE = 70 °C as the reference condition for RθJC = 0.23 °C/W rating under 50 W WCDMA load. For continuous operation, case temperature must not exceed 100 °C to maintain junction temperature below 200 °C with appropriate derating. Thermal monitoring via flange-mounted NTC is recommended for field-deployed units.
Can PTFA192401EV4XWSA1 be used in LTE TDD applications at 1900 MHz?
While not characterized for LTE TDD in the datasheet, its 1930–1990 MHz small-signal gain and output power performance support limited use in 1900 MHz TDD bands. However, ACLR requirements for LTE are stricter than WCDMA ACPR; validation with 10 MHz LTE signal and 3GPP-defined EVM limits is required before deployment.
PTFA192401EV4XWSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- H-36260-2
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.96GHz
- Gain:
- 16dB
- Voltage - Test:
- 30 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 1.6 A
- Power - Output:
- 50W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- H-36260-2
PTFA192401EV4XWSA1 FAQ
1.How can I place an order for PTFA192401EV4XWSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTFA192401EV4XWSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTFA192401EV4XWSA1 reliable?
The price and inventory of PTFA192401EV4XWSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFA192401EV4XWSA1 is usually 5 days.
3.What payment methods are accepted for PTFA192401EV4XWSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTFA192401EV4XWSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTFA192401EV4XWSA1?
PTFA192401EV4XWSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTFA192401EV4XWSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTFA192401EV4XWSA1?
For technical support, including PTFA192401EV4XWSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFA192401EV4XWSA1 requirements.
6.How does Aetrix verify that PTFA192401EV4XWSA1 is sourced from the original manufacturer or authorized distributors?
All PTFA192401EV4XWSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFA192401EV4XWSA1 meets industry standards.
7.What is the process for return or replacement of PTFA192401EV4XWSA1?
All PTFA192401EV4XWSA1 units undergo pre-shipment inspection (PSI). If there is an issue with PTFA192401EV4XWSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTFA192401EV4XWSA1 part is unused and in its original packaging.
Return procedure for PTFA192401EV4XWSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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