Infineon Technologies PTFA210601EV4R250FTMA1

Overview

PTFA210601EV4R250FTMA1 from Infineon is a thermally-enhanced 60 W LDMOS RF power transistor optimized for two-carrier WCDMA base station power amplifiers in the 2110–2170 MHz band, operating at 28 V with 550 mA quiescent drain current and delivering 12 W average output power, 16 dB linear gain, and –38 dBc intermodulation distortion under 3GPP signal conditions.

For engineers reviewing the PTFA210601EV4R250FTMA1 datasheet, PTFA210601EV4R250FTMA1 pinout, PTFA210601EV4R250FTMA1 application, or PTFA210601EV4R250FTMA1 equivalent, this device is selected for high-efficiency, broadband RF power stages requiring stable thermal performance, integrated ESD protection (HBM Class 2), and 10:1 VSWR ruggedness in macrocell infrastructure.

Technical Context

This LDMOS FET employs Infineon's advanced high-voltage process to achieve 65 V drain-source breakdown voltage and 0.15 Ω on-state resistance, enabling robust operation under high peak-to-average ratio signals. Its internal broadband matching supports 2070–2210 MHz impedance transformation without external tuning networks.

The H-36265-2 slotted-flange package delivers 0.89 °C/W junction-to-case thermal resistance at 60 W CW, enabling reliable operation up to 200 °C junction temperature. Gate bias stability is maintained across –20 °C to +100 °C case temperature via low-drift gate voltage design.

Key Specifications

Pinout & Package

H-36265-2 thermally-enhanced slotted flange package with gold-plated leads and integral heat sink interface; flange dimensions 20.31 × 10.16 mm (0.800 × 0.400 in); lead thickness 0.10 mm ±0.025 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA210601EV4R250FTMA1, the PTFA210601F variant trades minimal thermal resistance for mechanical flexibility, while PD85004-E offers higher voltage headroom at the cost of added protection circuitry and less integrated matching.

Availability

PTFA210601EV4R250FTMA1 is available at Aetrix Electronics and suitable for macrocell base station power amplifiers, WCDMA dual-carrier transmitters, and 3G infrastructure repeaters requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure OEMs.

Supply support for PTFA210601EV4R250FTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power transistors for wireless infrastructure.

This device belongs to Infineon's PTFA series of thermally-enhanced LDMOS FETs, designed specifically for high-efficiency, high-linearity WCDMA and LTE macrocell power amplifiers operating in licensed cellular bands.

FAQ

What is the maximum safe operating drain voltage for PTFA210601EV4R250FTMA1?

The absolute maximum drain-source voltage is 65 V, but continuous operation above 28 V is not recommended for WCDMA applications. The device is characterized and qualified for 28 V DC supply with 60 W CW output; exceeding 28 V increases risk of thermal runaway under modulated signals and voids reliability guarantees.

Does PTFA210601EV4R250FTMA1 require external gate protection diodes?

No-this part integrates ESD protection compliant with Human Body Model Class 2 (≥2 kV). External gate protection is unnecessary for standard handling and PCB-level ESD events; however, system-level surge protection (e.g., TVS on RF_IN line) remains advisable in outdoor base station enclosures.

Can PTFA210601EV4R250FTMA1 be used in LTE applications?

Yes-its broadband 2070–2210 MHz performance, 16 dB gain flatness, and –38 dBc IMD at 2140 MHz meet LTE Band I (2110–2170 MHz) requirements for 20 MHz channels. However, ACPR performance must be validated per 3GPP TS 36.104 using LTE-specific test signals, as WCDMA and LTE distortion profiles differ.

What is the recommended gate bias network for stable IDQ operation?

A two-resistor divider (R1 = 1.2 kΩ, R2 = 1.3 kΩ) with bypass capacitor (0.001 µF) is specified in Infineon's reference circuit. This provides 2.5 V nominal gate voltage at 550 mA IDQ, with temperature compensation achieved via the resistor ratio's TCR match; avoid potentiometer-based bias unless actively stabilized.