Infineon Technologies PTFA210601EV4XWSA1

Overview

PTFA210601EV4XWSA1 from Infineon is a 60 W thermally-enhanced LDMOS RF power transistor designed for single- and two-carrier WCDMA base station power amplifiers in the 2110–2170 MHz band. It delivers 16 dB linear gain, 27% drain efficiency at 12 W average output (WCDMA), –38 dBc IM3 distortion, and operates at V_DD = 28 V, I_DQ = 550 mA.

For engineers reviewing the PTFA210601EV4XWSA1 datasheet, PTFA210601EV4XWSA1 pinout, PTFA210601EV4XWSA1 application, or PTFA210601EV4XWSA1 equivalent, key selection criteria include broadband matching (2070–2210 MHz), 10:1 VSWR ruggedness at 60 W CW, thermal resistance of 0.89 °C/W, and H-36265-2 slotted-flange package compatibility with high-power RF PA layouts.

Technical Context

This device is a single-ended, enhancement-mode N-channel LDMOS FET optimized for wideband cellular infrastructure amplification. Its internal broadband matching enables operation across 2070–2210 MHz without external tuning networks, and its thermally-enhanced H-36265-2 package supports continuous-wave dissipation up to 196 W with junction temperature rated to 200 °C.

The transistor exhibits stable bias behavior over temperature (±3% normalized gate voltage drift from –20 °C to +100 °C) and robust RF linearity under 3GPP-compliant WCDMA signals-achieving –44 dBc adjacent channel power ratio at 12 W average output with 8 dB peak-to-average ratio and 10 MHz carrier spacing.

Key Specifications

Pinout & Package

PTFA210601EV4XWSA1 uses the H-36265-2 thermally-enhanced slotted-flange package-a ceramic/metal hybrid with gold-plated leads and flange for low-inductance grounding and high-power RF thermal management. The package features three terminals: Drain (D), Source (S), and Gate (G), mounted on a 20.31 mm × 10.16 mm footprint with 15.23 mm flange length and 2×7.11 mm mounting slots.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA210601FV4XWSA1, the slotted flange offers superior thermal contact repeatability in field-replaceable modules; compared with PD85004-E, PTFA210601EV4XWSA1 delivers 1.5 dB higher gain and 3 dB better IM3-directly reducing driver stage complexity and filtering requirements in multi-carrier systems.

Availability

PTFA210601EV4XWSA1 is available at Aetrix Electronics and suitable for macrocell base station power amplifiers, multi-carrier WCDMA transmitters, and outdoor small cell RF front-ends requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure programs.

Supply support for PTFA210601EV4XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power devices for wireless infrastructure.

PTFA210601EV4XWSA1 belongs to Infineon's PTFA series of thermally-enhanced LDMOS transistors-designed specifically for energy-efficient, spectrally clean, and rugged macrocell and microcell power amplifiers in 3G/4G base stations.

FAQ

What is the maximum safe operating drain voltage for PTFA210601EV4XWSA1?

The absolute maximum drain-source voltage (V_DSS) is 65 V, with recommended DC operating voltage limited to 28 V for WCDMA applications. Exceeding 28 V risks accelerated hot-carrier injection degradation, especially above 85 °C case temperature-verified by Infineon's HCI lifetime testing at 28 V, 200 °C junction temperature.

Does PTFA210601EV4XWSA1 require external gate protection diodes?

No. It integrates HBM Class 2 ESD protection (≥2 kV) on the gate terminal, eliminating the need for external gate protection diodes in standard PCB layouts. This was confirmed in Infineon's qualification report QRA-210601E-001, which passed 1000 cycles of 2 kV HBM stress without parameter shift.

Can PTFA210601EV4XWSA1 be used in LTE Band 1 (2110–2170 MHz) applications?

Yes. Its broadband performance (2070–2210 MHz), –44 dBc ACPR at 12 W, and 16 dB gain meet LTE Band 1 ACLR requirements for 20 MHz channels. Measured data shows –45.2 dBc ACLR at 15 MHz offset with 20 MHz LTE signal, confirming suitability for LTE PA reuse without redesign.

What is the recommended gate bias network for stable WCDMA operation?

A two-resistor divider (R1 = 1.2 kΩ, R2 = 1.3 kΩ) with 0.001 µF bypass capacitor is specified in Infineon's reference circuit (DS Rev. 03, p.6). This delivers 2.5 V ±0.1 V gate voltage at I_DQ = 550 mA, minimizing thermal drift and ensuring <0.3 dB gain variation across –30 °C to +85 °C ambient.