Infineon Technologies PTFA210701EV4R250XTMA1

Overview

PTFA210701EV4R250XTMA1 from Infineon is a thermally-enhanced 70 W LDMOS RF power transistor designed for single- and dual-carrier WCDMA base station power amplifiers in the 2110–2170 MHz band. It operates at 30 V drain supply, delivers 42 dBm average output power with 16.5 dB linear gain and –36.5 dBc intermodulation distortion under 3GPP WCDMA signal conditions (8 dB PAPR, 10 MHz carrier spacing).

For engineers reviewing the PTFA210701EV4R250XTMA1 datasheet, PTFA210701EV4R250XTMA1 pinout, PTFA210701EV4R250XTMA1 application, or PTFA210701EV4R250XTMA1 equivalent, this device is selected for high-efficiency, broadband RF PA stages requiring stable thermal performance, integrated ESD protection (HBM Class 2), and 10:1 VSWR ruggedness at 70 W CW.

Technical Context

This LDMOS FET employs Infineon's advanced high-voltage process to achieve 65 V V_BRDSS and low R_DS(on) of 0.125 Ω, enabling high-power operation with robust voltage margin. Its internal broadband matching supports 2060–2220 MHz impedance transformation (Z_in ≈ 21 Ω + j0.1 Ω, Z_out ≈ 4.0 Ω – j2.3 Ω at 2140 MHz), minimizing external matching complexity.

The device features thermally optimized H-36265-2 slotted-flange packaging with R_θJC = 0.92 °C/W at 70 W CW and T_J rating up to 200 °C, supporting high-reliability macro-cell and micro-cell base station amplifier designs operating at case temperatures up to 90 °C.

Key Specifications

Pinout & Package

PTFA210701EV4R250XTMA1 uses the H-36265-2 thermally enhanced slotted-flange package (15.34 mm × 10.16 mm × 3.56 mm), featuring gold-plated drain (D), source (S), and gate (G) terminals on a copper-tungsten flange for low thermal resistance and mechanical stability in RF power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA210701FV4R250XTMA1, the PTFA210701EV4R250XTMA1 offers superior thermal interface via slotted flange for forced-air or liquid-cooled systems; versus PD85004-E, it delivers 1.3 dB higher gain and 2 dB better IM3, enabling simpler PA architecture and tighter ACLR compliance.

Availability

PTFA210701EV4R250XTMA1 is available at Aetrix Electronics and suitable for macro-cell base stations, micro-cell small cells, WCDMA repeaters, and active antenna systems requiring stable component supply and long-term lifecycle support.

Supply support for PTFA210701EV4R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-voltage silicon and GaN power devices.

This part belongs to Infineon's PTFA series of thermally robust LDMOS RF transistors, engineered specifically for cellular infrastructure power amplifiers demanding high efficiency, broadband linearity, and field-proven ruggedness in 3G/4G base stations.

FAQ

What is the maximum safe operating drain voltage for PTFA210701EV4R250XTMA1?

The absolute maximum drain-source voltage (V_DSS) is 65 V, with recommended DC operating voltage limited to 30 V for WCDMA applications. Operation above 30 V is permissible only in CW mode with strict thermal derating (1.09 W/°C above 25 °C ambient) and verified heatsink performance.

Does PTFA210701EV4R250XTMA1 require external gate protection diodes?

No - the device integrates ESD protection rated to Human Body Model Class 2 (≥2 kV), making discrete gate protection diodes unnecessary in standard PCB layouts. However, transient suppression remains advisable in high-noise RF environments with long gate trace runs.

Can PTFA210701EV4R250XTMA1 be used in LTE TDD applications at 2300–2400 MHz?

While not characterized for LTE TDD in its datasheet, broadband measurements confirm usable gain (>14 dB) and efficiency (>25%) up to 2220 MHz. Operation at 2300–2400 MHz is possible with re-optimized matching networks, but IMD and ACLR performance must be validated per 3GPP TS 36.104.

What is the recommended gate bias voltage for 550 mA quiescent drain current?

The typical gate-source voltage required to achieve I_DQ = 550 mA at V_DD = 30 V and T_CASE = 25 °C is 2.5 V, with a guaranteed range of 2.0 V to 3.0 V. Bias networks must accommodate ±0.1 V drift over temperature and lifetime to maintain stable class-AB operation.