Infineon Technologies PTFA210701EV4T500XWSA1

Overview

PTFA210701EV4T500XWSA1 from Infineon is a thermally-enhanced 70 W LDMOS RF power transistor designed for single- and dual-carrier WCDMA base station power amplifiers in the 2110–2170 MHz band. It delivers 16.5 dB linear gain, 29% drain efficiency at 30 V/550 mA, –36.5 dBc IM3 distortion under 3GPP WCDMA signal conditions, and operates with 65 V V_DSS and 200 °C maximum junction temperature.

For engineers reviewing the PTFA210701EV4T500XWSA1 datasheet, PTFA210701EV4T500XWSA1 pinout, PTFA210701EV4T500XWSA1 application, or PTFA210701EV4T500XWSA1 equivalent, key selection criteria include broadband matching (2060–2220 MHz), 0.92 °C/W thermal resistance (R_θJC), 10:1 VSWR ruggedness, and slotted-flange H-36265-2 package compatibility with high-power RF PCB layouts.

Technical Context

This device implements a single-ended, enhancement-mode LDMOS FET architecture optimized for wideband cellular infrastructure amplification. Its internal broadband matching network supports operation across 2060–2220 MHz without external tuning, and its gate biasing is stabilized over temperature via integrated thermal compensation design.

The transistor features integrated ESD protection (HBM Class 2), low HCI drift, and is rated for 190 W total dissipation with derating above 25 °C. It sustains 70 W CW output into 10:1 VSWR at 30 V, confirming robust load mismatch tolerance required in macrocell PA stages.

Key Specifications

Pinout & Package

PTFA210701EV4T500XWSA1 is housed in the thermally-enhanced H-36265-2 package: a slotted-flange, single-ended metal-ceramic RF package with gold-plated leads and flange, optimized for high-power RF PCB thermal management and mechanical stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA210701FV4T500XWSA1, the slotted-flange variant offers marginally better thermal resistance; versus PD570752-E, it trades 2 dB gain and 2% efficiency for legacy system compatibility and known matching network data.

Availability

PTFA210701EV4T500XWSA1 is available at Aetrix Electronics and suitable for macrocell base station PA, WCDMA repeater units, and 3G infrastructure test fixtures requiring stable component supply despite end-of-life status.

Supply support for PTFA210701EV4T500XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power solutions for telecom infrastructure.

This part belongs to Infineon's PTFA series of thermally-robust LDMOS transistors, engineered specifically for wideband, high-efficiency cellular base station power amplifiers operating in licensed spectrum bands.

FAQ

What is the recommended gate bias voltage for PTFA210701EV4T500XWSA1 in WCDMA operation?

The typical gate bias voltage is 2.5 V at V_DD = 30 V and I_DQ = 550 mA, with a specified range of 2.0–3.0 V. This bias point ensures optimal linearity and efficiency for dual-carrier WCDMA signals; deviation beyond ±0.2 V significantly degrades IM3 performance per characterization data.

Can PTFA210701EV4T500XWSA1 be used in LTE applications?

Yes-it has been validated for broadband operation from 2060–2220 MHz and exhibits –36.5 dBc IM3 at 2140 MHz under WCDMA, which correlates well with LTE ACLR requirements. However, final LTE 20 MHz or 40 MHz signal validation must be performed in the target PA circuit due to differing crest factor and modulation dynamics.

Is the H-36265-2 package RoHS-compliant?

Yes-the datasheet explicitly states "Pb-free and RoHS-compliant" for both PTFA210701E and PTFA210701F variants. Gold plating thickness on leads and flange is 1.14 ± 0.38 µm, meeting JEDEC J-STD-609A Class 1 moisture sensitivity and RoHS Annex II heavy metal limits.

What is the maximum safe operating temperature for the case during continuous operation?

The maximum case temperature is limited by thermal derating: at T_CASE = 70 °C, the device sustains 70 W CW output. Above 25 °C, power must be derated at 1.09 W/°C. Therefore, sustained operation above 70 °C case temperature violates the 190 W total dissipation limit and risks accelerated HCI degradation.