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Infineon Technologies PTFA210701EV4XWSA1
- Part No.:
- PTFA210701EV4XWSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- H-36265-2
- Datasheet:
-
PTFA210701EV4XWSA1.pdf
- Description:
- RF MOSFET LDMOS 30V H-36265-2
- Quantity:
- Payment:
- Shipping:
Inventory:3,119
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Product details
Overview
PTFA210701EV4XWSA1 from Infineon is a thermally-enhanced 70 W LDMOS RF power transistor designed for single- and dual-carrier WCDMA base station power amplifiers in the 2110–2170 MHz band. It operates at VDD = 30 V, IDQ = 550 mA, delivers 42.5 dBm average output power, achieves 16.5 dB linear gain and 29% drain efficiency under WCDMA conditions, and features integrated ESD protection (HBM Class 2).
For engineers reviewing the PTFA210701EV4XWSA1 datasheet, PTFA210701EV4XWSA1 pinout, PTFA210701EV4XWSA1 application, or PTFA210701EV4XWSA1 equivalent, key selection criteria include broadband matching (2060–2220 MHz), 10:1 VSWR ruggedness at 70 W CW, thermal resistance of 0.92 °C/W, and H-36265-2 slotted-flange package compatibility with high-power RF PCB layouts.
Technical Context
This device implements a single-ended, enhancement-mode LDMOS FET architecture optimized for wideband cellular infrastructure amplification. Its internal broadband matching network covers 2060–2220 MHz with source impedance ranging from 19.94 + j1.61 Ω to 22.26 – j2.09 Ω and load impedance from 4.50 – j2.87 Ω to 3.66 – j1.66 Ω across band.
It supports two-tone WCDMA operation at 2140 MHz with 1 MHz tone spacing, delivering 70 W PEP output while maintaining –29.5 dBc third-order IMD and 41% drain efficiency. DC bias stability is ensured via gate voltage regulation (VGS = 2.0–3.0 V) and low HCI drift over junction temperature (TJ up to 200 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2110–2170 MHz (WCDMA band); broadband operation verified 2060–2220 MHz |
| Average Output Power | 42.5 dBm (18 W) under 3GPP WCDMA signal, 8 dB P/A ratio, 10 MHz carrier spacing |
| Linear Gain | 16.5 dB typical at 2140 MHz - enables single-stage PA design with minimal driver stage complexity |
| Drain Efficiency | 29% typical (WCDMA), 41% typical (two-tone 70 W PEP) - reduces thermal load and cooling requirements |
| Intermodulation Distortion | –36.5 dBc (IMD3, WCDMA), –29.5 dBc (IMD3, two-tone 70 W PEP) - meets spectral mask compliance for multi-carrier systems |
| Thermal Resistance | RθJC = 0.92 °C/W at 70 W CW, TCASE = 70 °C - enables compact heatsink integration in macro base station modules |
| VSWR Tolerance | Withstands 10:1 VSWR at 30 V, 70 W CW - ensures robust operation under antenna mismatch conditions |
Pinout & Package
PTFA210701EV4XWSA1 is housed in the H-36265-2 thermally-enhanced slotted-flange package, featuring gold-plated leads and flange for low-contact-resistance mounting to heatsinks. Package dimensions: 20.31 × 10.16 mm (0.800 × 0.400 in), flange thickness 0.0381 mm (0.0015 in), with drain (D), source (S), and gate (G) terminals clearly defined per ASME Y14.5M-1994.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | RF power output node | High-current, high-voltage terminal connected to output matching network; requires low-inductance RF grounding and thermal path to heatsink |
| S (Source) | RF ground reference and DC return | Primary RF ground point; must be low-impedance connection to PCB ground plane and heatsink for stability and thermal conduction |
| G (Gate) | RF input control terminal | High-impedance, ESD-sensitive node requiring series R/C bias network and DC blocking; gate voltage regulated between 2.0–3.0 V |
Key Features
| Feature | Design Value |
|---|---|
| Broadband internal matching | Eliminates external input/output matching components across 2060–2220 MHz, reducing BOM count and layout sensitivity |
| Thermally-enhanced slotted flange | Enables direct bolt-down mounting with <0.92 °C/W junction-to-case resistance, critical for continuous 70 W operation |
| Integrated ESD protection (HBM Class 2) | Guarantees ≥2 kV human-body-model robustness without external TVS, simplifying handling and assembly |
| 10:1 VSWR ruggedness | Ensures safe operation under severe antenna mismatch without degradation or latch-up, improving system reliability |
| Low HCI drift & thermal stability | Maintains consistent gain and bias over temperature (–40 to +150 °C storage, 200 °C max junction), supporting uncooled outdoor deployments |
Applications
| Macro Base Station PA | Multi-Carrier WCDMA Transmitter |
|---|---|
Use Scenario: High-power final-stage amplifier in 3G macrocell base stations operating in Band I (2110–2170 MHz). IC Role / Device Role / Timing Role: Single-ended RF power transistor delivering 18 W average output under 3GPP-compliant WCDMA signal with 8 dB peak-to-average ratio. Use Value: Delivers 16.5 dB gain and 29% efficiency at 42.5 dBm, enabling compact, air-cooled PA modules meeting spectral mask and ACLR requirements. | Use Scenario: Dual-carrier WCDMA transmitter in distributed antenna systems (DAS) requiring simultaneous 2135/2145 MHz channel amplification. IC Role / Device Role / Timing Role: Two-tone RF power amplifier operating at 2140 MHz with 10 MHz carrier spacing and 3.84 MHz channel bandwidth. Use Value: Achieves –36.5 dBc IMD3 and –42.5 dBc ACPR, ensuring adjacent channel interference remains below –45 dBc per 3GPP TS 25.104. |
| Outdoor Small Cell PA | RF Test Fixture Amplifier |
Use Scenario: Final-stage PA in ruggedized outdoor small cells deployed in remote or harsh environments. IC Role / Device Role / Timing Role: Thermally stable LDMOS transistor operating continuously at TJ up to 200 °C with minimal gain drift over temperature. Use Value: Maintains bias stability across –40 to +85 °C ambient via normalized gate voltage tracking, eliminating need for active bias compensation circuits. | Use Scenario: Reference amplifier in production test fixtures for validating WCDMA PA linearity and efficiency metrics. IC Role / Device Role / Timing Role: Characterized two-tone device used as golden unit for IMD, ACPR, and gain compression measurements at 2140 MHz. Use Value: Provides repeatable –29.5 dBc IMD3 and 41% efficiency at 70 W PEP, serving as traceable calibration standard for automated RF test systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-power RF LDMOS amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PTFA210701FV4XWSA1 | Same die, H-37265-2 earless flange package - 0.05 °C/W higher RθJC due to reduced flange surface area | Preferred where mechanical clearance prohibits slotted flange mounting; slightly lower thermal margin at full 70 W CW | Select when board-level space constraints preclude H-36265-2 mounting but same RF performance is required |
| PD85004-E | STMicroelectronics 70 W LDMOS; 2110–2170 MHz; RθJC = 0.95 °C/W; no integrated ESD protection | Requires external HBM Class 2 protection; broader 2010–2300 MHz range but lower IMD performance (–34 dBc typical) | Choose for cost-sensitive designs where external ESD protection is already implemented and wider frequency coverage is needed |
Compared with PTFA210701FV4XWSA1, the PTFA210701EV4XWSA1 offers superior thermal interface via slotted flange, while PD85004-E trades ESD integration and IMD performance for extended bandwidth and alternate supply chain availability.
Availability
PTFA210701EV4XWSA1 is available at Aetrix Electronics and suitable for macro base station power amplifiers, multi-carrier WCDMA transmitters, and outdoor small cell RF front-ends requiring stable component supply in legacy 3G infrastructure programs.
Supply support for PTFA210701EV4XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power solutions for wireless infrastructure.
The PTFA series belongs to Infineon's thermally-optimized LDMOS portfolio, engineered specifically for 3G/4G macrocell and microcell base station power amplifiers demanding high efficiency, ruggedness, and broadband linearity.
FAQ
What is the maximum continuous drain current rating for PTFA210701EV4XWSA1?
The device does not specify a maximum continuous drain current (ID) rating independent of thermal conditions. Its safe operating area is defined by VDS ≤ 65 V, PD ≤ 190 W (derated above 25 °C), and TJ ≤ 200 °C. At VDD = 30 V and 70 W CW output, typical ID peaks near 3.5 A during RF envelope peaks, but DC quiescent current is fixed at 550 mA.
Does PTFA210701EV4XWSA1 require external gate bias circuitry?
Yes - the device requires an external gate bias network to set VGS = 2.0–3.0 V at IDQ = 550 mA. The reference design uses a potentiometer-based adjustable network (R4) with decoupling capacitors (C9, C24) and series gate resistor (R9) for stability and ESD filtering; no internal bias regulator is integrated.
Can PTFA210701EV4XWSA1 be used in LTE applications?
While not characterized for LTE signals in its official datasheet, the device's broadband 2060–2220 MHz response, 42.5 dBm output, and –36.5 dBc IMD3 under WCDMA make it technically viable for early LTE FDD Band I (2110–2170 MHz) applications at reduced PAPR. However, Infineon does not guarantee ACLR or EVM performance for LTE modulation schemes.
Is the H-36265-2 package lead-free and RoHS-compliant?
Yes - the PTFA210701EV4XWSA1 H-36265-2 package is explicitly stated as Pb-free and RoHS-compliant in the datasheet. Gold plating on drain, source, gate, flange, and leads meets JEDEC J-STD-609 Category 1 requirements, with plating thickness specified as 1.14 ± 0.38 µm.
PTFA210701EV4XWSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- H-36265-2
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 2.14GHz
- Gain:
- 16.5dB
- Voltage - Test:
- 30 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 550 mA
- Power - Output:
- 18W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H-36265-2
PTFA210701EV4XWSA1 FAQ
1.How can I place an order for PTFA210701EV4XWSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTFA210701EV4XWSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTFA210701EV4XWSA1 reliable?
The price and inventory of PTFA210701EV4XWSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFA210701EV4XWSA1 is usually 5 days.
3.What payment methods are accepted for PTFA210701EV4XWSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTFA210701EV4XWSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTFA210701EV4XWSA1?
PTFA210701EV4XWSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTFA210701EV4XWSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTFA210701EV4XWSA1?
For technical support, including PTFA210701EV4XWSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFA210701EV4XWSA1 requirements.
6.How does Aetrix verify that PTFA210701EV4XWSA1 is sourced from the original manufacturer or authorized distributors?
All PTFA210701EV4XWSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFA210701EV4XWSA1 meets industry standards.
7.What is the process for return or replacement of PTFA210701EV4XWSA1?
All PTFA210701EV4XWSA1 units undergo pre-shipment inspection (PSI). If there is an issue with PTFA210701EV4XWSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTFA210701EV4XWSA1 part is unused and in its original packaging.
Return procedure for PTFA210701EV4XWSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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