Infineon Technologies PTFA211801E V4 R250

Overview

PTFA211801E V4 R250 from Infineon is a thermally-enhanced, 180-W, internally matched LDMOS RF power transistor for WCDMA base station amplifiers. It operates at 2110–2170 MHz with 28 V supply, 1.2 A quiescent drain current, 15.5 dB linear gain, and –36 dBc intermodulation distortion under two-carrier 3GPP WCDMA conditions.

For engineers reviewing the PTFA211801E V4 R250 datasheet, PTFA211801E V4 R250 pinout, PTFA211801E V4 R250 application, or PTFA211801E V4 R250 equivalent, key selection criteria include broadband internal matching, 27.5% drain efficiency at 45.5 dBm average output, 10:1 VSWR ruggedness, and thermal resistance of 0.31 °C/W.

Technical Context

This device is a single-ended, enhancement-mode N-channel LDMOS FET optimized for high-linearity, high-efficiency WCDMA macrocell and microcell base station final-stage amplification. Its internal broadband matching eliminates external input/output tuning networks across 2110–2170 MHz.

The transistor features full gold metallization, integrated ESD protection (HBM Class 2), and guaranteed operation up to 200 °C junction temperature. It delivers 38.5% drain efficiency in two-tone mode at 140 W PEP and maintains stable bias over –40 to +150 °C storage range.

Key Specifications

Pinout & Package

Package: Thermally-enhanced slotted flange, single-ended (Infineon Package Outline 30260). Flange-mounted with source-connected metal tab for direct thermal interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA211801F, the PTFA211801E offers identical RF performance but requires slotted-flange mounting; compared with PD85018-E, it delivers +17.5 dBm higher output power and –4 dBc better IMD, justifying its use in macrocell infrastructure where spectral purity is critical.

Availability

PTFA211801E V4 R250 is available at Aetrix Electronics and suitable for WCDMA macrocell base stations, remote radio heads, and 3GPP-compliant test transmitters requiring stable component supply and long-term lifecycle support.

Supply support for PTFA211801E V4 R250 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power solutions for wireless infrastructure.

The PTFA211801E belongs to Infineon's GOLDMOS LDMOS product line, designed specifically for high-efficiency, high-reliability WCDMA and LTE base station power amplifiers operating in the 2–2.2 GHz band.

FAQ

What is the maximum continuous drain current rating for PTFA211801E V4 R250?

The device has no specified maximum continuous drain current; instead, it is rated by total device dissipation (565 W at T_CASE = 25 °C) and thermal resistance (0.31 °C/W). At 28 V supply and 150 W CW output, typical I_D is ~5.4 A peak, with quiescent I_DQ set at 1.2 A for optimal linearity and efficiency trade-off in WCDMA operation.

Does PTFA211801E V4 R250 require external gate bias sequencing?

No external sequencing is required. The device operates with a fixed gate voltage of 2.0–3.0 V (typical 2.5 V) at I_DQ = 1.2 A and V_DD = 28 V. Bias stability is ensured by on-board gate resistor network (R1–R4 in reference schematic) and bypass capacitors (C1–C3), eliminating need for active bias controllers in most implementations.

Can PTFA211801E V4 R250 be used in LTE Band 1 (2110–2170 MHz) applications?

Yes - its characterization covers 2110–2170 MHz with verified performance under 3GPP WCDMA signals, and its broadband internal matching and linearity (–36 dBc IMD, –41 dBc ACPR) meet LTE Band 1 ACLR requirements. No requalification is needed for LTE use, though system-level EVM validation remains necessary.

What is the recommended minimum heatsink thermal resistance for 150 W CW operation?

With R_θJC = 0.31 °C/W and max T_J = 200 °C, maintaining T_CASE ≤ 70 °C requires total thermal resistance (heatsink + interface) ≤ 0.87 °C/W. For conservative design, a heatsink with R_θSA ≤ 0.5 °C/W and thermal interface material ≤ 0.06 °C/W is recommended to ensure margin under worst-case ambient and airflow conditions.