Infineon Technologies PTFA211801EV5XWSA1

Overview

PTFA211801EV5XWSA1 from Infineon is a thermally-enhanced, 180 W, internally matched LDMOS FET designed for WCDMA base station power amplification in the 2110–2170 MHz band. It delivers 45.5 dBm average output power, 15.5 dB linear gain, and 27.5% drain efficiency under two-carrier 3GPP signal conditions (PAR = 8 dB) at 2140 MHz with 28 V supply and 1.2 A quiescent current.

For engineers reviewing the PTFA211801EV5XWSA1 datasheet, PTFA211801EV5XWSA1 pinout, PTFA211801EV5XWSA1 application, or PTFA211801EV5XWSA1 equivalent, key selection criteria include broadband internal matching, 10:1 VSWR ruggedness at 150 W CW, integrated ESD protection, thermal resistance of 0.31 °C/W, and Pb-free RoHS compliance-critical for high-reliability macrocell PA designs.

Technical Context

This LDMOS transistor operates as a single-ended RF power amplifier stage optimized for wideband WCDMA signals. Its internal matching network covers 2110–2170 MHz without external tuning, and it supports both single- and two-carrier operation with verified IMD performance down to –36 dBc under 3GPP-compliant test conditions.

The device uses Infineon's advanced LDMOS process to achieve low HCI drift and stable gain compression (0.5–1.0 dB at P1dB), while its slotted-flange H-36260-2 package enables direct heatsink mounting and maintains junction temperature ≤200 °C under 150 W CW operation at TCASE = 70 °C.

Key Specifications

Pinout & Package

PTFA211801EV5XWSA1 is housed in the thermally-enhanced H-36260-2 slotted flange package (23.37 × 13.72 mm), featuring a metal lid, gold-plated leads, and direct-drain thermal path to heatsink via flange mounting. Pin identification follows standard LDMOS orientation: Drain (D), Source (S), Gate (G).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power WCDMA LDMOS amplifier applications.

Compared with PD85018L-E and MRFE6VP61K25HR5, PTFA211801EV5XWSA1 offers the best balance of ruggedness (10:1 VSWR), thermal performance (0.31 °C/W), and WCDMA-specific linearity-making it optimal for cost-sensitive, high-reliability macrocell deployments where 2110–2170 MHz coverage and field upgradeability are primary drivers.

Availability

PTFA211801EV5XWSA1 is available at Aetrix Electronics and suitable for macrocell base station PA, WCDMA repeater systems, and legacy 3G infrastructure upgrades requiring stable component supply, long-lifecycle support, and drop-in compatibility with existing H-36260-2 layouts.

Supply support for PTFA211801EV5XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-voltage LDMOS and GaN RF power transistors for telecom infrastructure.

PTFA211801EV5XWSA1 belongs to Infineon's T series of thermally-enhanced LDMOS FETs, engineered specifically for high-efficiency, high-reliability WCDMA and LTE macrocell power amplifiers operating in harsh environmental conditions.

FAQ

What is the maximum safe operating voltage for PTFA211801EV5XWSA1?

The absolute maximum drain-source voltage (V_DSS) is 65 V, but the device is characterized and qualified for reliable operation at V_DD = 28 V (WCDMA) and 30 V (CW). Operation above 30 V is not recommended due to accelerated HCI degradation and reduced MTTF, even if within V_DSS limits.

Does PTFA211801EV5XWSA1 require external gate protection?

No-integrated ESD protection meets HBM Class 1B (≥2 kV), eliminating the need for external gate Zener diodes in standard PCB layouts. However, a 0.001 µF DC-blocking capacitor (C2/C3 per reference schematic) and 1.2–1.3 kΩ gate bias resistor remain mandatory for stable RF operation and DC bias control.

Can PTFA211801EV5XWSA1 be used in Doherty amplifier configurations?

Yes-the device's broadband internal matching, symmetric gain compression, and robust VSWR tolerance make it suitable as a main or peaking amplifier in Doherty architectures. Application notes AN321 and AN337 from Infineon confirm validated layouts for 2140 MHz Doherty PAs using this part number.

What is the recommended heatsink interface material for H-36260-2 mounting?

Infineon specifies a thermal interface material (TIM) with ≤0.15 °C·in²/W (≤0.23 °C·cm²/W) thermal resistance, such as Dow Corning TC-5122 or Parker Chomerics T-grease 3100. Minimum clamping force is 35 lbf/in (6.1 N/mm) across the flange to ensure R_θJC ≤0.31 °C/W is maintained in production assemblies.