Infineon Technologies PTFA212001EV4R0XTMA1

Overview

PTFA212001EV4R0XTMA1 from Infineon is a thermally-enhanced 200 W LDMOS RF power transistor designed for single- and two-carrier WCDMA base station power amplifiers in the 2110–2170 MHz band. It delivers 70 W average output power (single-carrier), 50 W (two-carrier), 15.5 dB linear gain, 34% drain efficiency, and –37 dBc adjacent channel power ratio at 2140 MHz under 3GPP-compliant signal conditions.

For engineers reviewing the PTFA212001EV4R0XTMA1 datasheet, PTFA212001EV4R0XTMA1 pinout, PTFA212001EV4R0XTMA1 application, or PTFA212001EV4R0XTMA1 equivalent, key selection criteria include broadband internal matching, 5:1 VSWR ruggedness at 30 V/200 W CW, integrated Class 2 HBM ESD protection, and thermal resistance of 0.28 °C/W (junction-to-case).

Technical Context

This device operates as a high-power RF amplifier stage in macrocell and remote radio head (RRH) transmitter chains. Its LDMOS process enables stable operation at 30 V supply with 1.6 A quiescent drain current, supporting both 3GPP TM1 and multi-tone WCDMA modulation schemes up to 8.5 dB PAPR.

The H-36260-2 package features a slotted flange for enhanced thermal dissipation and mechanical mounting compatibility with standard RF heatsinks. Internal broadband matching reduces external tuning complexity across the 2110–2170 MHz band, while low HCI drift ensures long-term gain stability under continuous RF stress.

Key Specifications

Pinout & Package

PTFA212001EV4R0XTMA1 uses the H-36260-2 thermally-enhanced slotted-flange package. The flange serves as the drain terminal and primary thermal path; gate and source connections are made via solderable leads on the side of the ceramic/metal package body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA212001EV4R0XTMA1, PTFA220001FV4R0XTMA1 offers higher PEP headroom in an earless-flange variant, while PD85015-E provides a lower-cost, lower-power alternative requiring full external matching and sacrificing ruggedness and efficiency.

Availability

PTFA212001EV4R0XTMA1 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, dual-carrier WCDMA transmitters, and multi-standard baseband aggregation systems requiring stable component supply and proven field reliability.

Supply support for PTFA212001EV4R0XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global manufacturing and R&D centers.

This part belongs to Infineon's Thermally-Enhanced High Power RF LDMOS FET product line, engineered specifically for cellular infrastructure applications demanding high efficiency, broadband linearity, and field-proven ruggedness in 3G/4G base station power amplifiers.

FAQ

What is the maximum safe operating voltage for PTFA212001EV4R0XTMA1?

The absolute maximum drain-source voltage (V_DSS) is 65 V, but the device is characterized and qualified for continuous operation at 30 V DC supply. Exceeding 30 V risks exceeding safe operating area limits under RF drive, especially above 1.6 A IDQ, and may trigger thermal runaway or gate oxide stress.

Does PTFA212001EV4R0XTMA1 require external gate bias sequencing?

No external gate bias sequencing circuitry is required. The device operates with a fixed 2.5 V typical gate voltage (V_GS) at 1.6 A IDQ and 30 V V_DD. However, a gate protection network (e.g., series resistor + shunt capacitor) is mandatory per Infineon's reference design to suppress RF feedback and prevent oscillation.

Can PTFA212001EV4R0XTMA1 be used outside the 2110–2170 MHz band?

While broadband-matched, its RF performance is only guaranteed and characterized within 2110–2170 MHz. Outside this band, gain drops below 12 dB and ACPR degrades beyond –30 dBc at 5 MHz offset; use requires full re-characterization and is not supported by Infineon's production test flow or reliability qualification.

Is PTFA212001EV4R0XTMA1 still in active production?

No-this part is officially discontinued per Infineon's 2017 datasheet revision. Aetrix Electronics holds remaining authorized inventory and supports legacy design-in and repair programs, but no new wafer starts or package assembly are scheduled. Long-term alternatives should be evaluated for new designs.