My Inquiry
My Account
Infineon Technologies PTFA212001EV4R250XTMA1
- Part No.:
- PTFA212001EV4R250XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- H-36260-2
- Datasheet:
-
PTFA212001EV4R250XTMA1.pdf
- Description:
- RF MOSFET LDMOS 30V H-36260-2
- Quantity:
- Payment:
- Shipping:
Inventory:5,281
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PTFA212001EV4R250XTMA1 from Infineon is a 200 W thermally-enhanced LDMOS RF power transistor designed for single- and two-carrier WCDMA base station power amplifiers in the 2110–2170 MHz band. It operates at VDD = 30 V, IDQ = 1600 mA, delivers 50 W average output power with 15.8 dB linear gain and 28% drain efficiency under 3GPP two-carrier WCDMA conditions at 2140 MHz.
For engineers reviewing the PTFA212001EV4R250XTMA1 datasheet, PTFA212001EV4R250XTMA1 pinout, PTFA212001EV4R250XTMA1 application, or PTFA212001EV4R250XTMA1 equivalent, this device is selected for high-efficiency, broadband RF PA stages requiring robust VSWR tolerance (5:1 @ 30 V, 200 W CW), integrated ESD protection (HBM Class 2), and thermal stability in macro-cell infrastructure.
Technical Context
This LDMOS FET employs Infineon's advanced high-voltage process to achieve 65 V V(BR)DSS, 0.05 Ω RDS(on), and 0.28 °C/W junction-to-case thermal resistance in the H-36260-2 slotted-flange package. Its internal broadband matching enables operation across 2050–2250 MHz without external tuning networks.
The device supports both pulsed and continuous-wave operation, delivering 220 W P–1dB at 2170 MHz (CW), –35.5 dBc IM3 under two-tone WCDMA, and –40 dBc adjacent channel power ratio - meeting stringent 3GPP spectral mask requirements for multi-carrier cellular infrastructure.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2110–2170 MHz (optimized for 2140 MHz WCDMA band; usable up to 2250 MHz) |
| Output Power (Avg) | 50 W (two-carrier WCDMA, 3GPP signal, P/AR = 8 dB, 10 MHz spacing) |
| Linear Gain | 15.8 dB (enables reduced driver stage complexity in multi-stage PAs) |
| Drain Efficiency | 28% (two-carrier WCDMA); 54% (CW at 2170 MHz, enabling lower thermal load in backup modes) |
| VSWR Tolerance | 5:1 @ 30 V, 200 W CW (supports antenna mismatch resilience without external circulators) |
| Thermal Resistance | RθJC = 0.28 °C/W (enables compact heatsink design at TCASE = 70°C, 200 W) |
| ESD Rating | HBM Class 2 (≥2 kV; reduces need for external ESD protection in front-end layout) |
Pinout & Package
Package: H-36260-2 - thermally-enhanced slotted-flange, single-ended metal-ceramic package with isolated source, optimized for RF grounding and high-power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Flange) | High-current RF output node | Electrically connected to flange; requires low-inductance thermal mounting to heatsink |
| Source | RF ground reference and current return path | Internally isolated from flange; must be DC-grounded via low-impedance RF path |
| Gate | RF input control terminal | High-impedance node; requires stable bias network and ESD protection per HBM Class 2 spec |
Key Features
| Feature | Design Value |
|---|---|
| Broadband internal matching | Eliminates discrete matching components across 2050–2250 MHz, reducing PCB area and tuning labor |
| Thermally-enhanced slotted flange | Enables 200 W CW operation at TCASE ≤ 70°C without forced air, supporting passive-cooled macro-cell designs |
| Integrated ESD protection | HBM Class 2 (≥2 kV) on gate terminal reduces risk of assembly-line damage and field failures |
| Low HCI drift & high TJ rating | 200°C max junction temperature and stable parametric shift over lifetime ensure >10-year reliability in outdoor base stations |
Applications
| Macro-Cell Base Station PA | WCDMA Dual-Carrier Transmitter |
|---|---|
Use Scenario: High-power final-stage amplifier in 3G UMTS macro-cell base stations operating in Band I (2110–2170 MHz). IC Role / Device Role / Timing Role: RF power transistor delivering 50 W average output under two-carrier 3GPP-compliant signal with 8 dB P/AR. Use Value: Delivers –35.5 dBc IM3 and –40 dBc ACPR while maintaining 28% efficiency, meeting spectral purity and thermal constraints of outdoor cabinet deployments. |
Use Scenario: Multi-carrier transmitter module supporting concurrent WCDMA carriers with 10 MHz spacing. IC Role / Device Role / Timing Role: Final-stage LDMOS FET biased at 30 V / 1.6 A, handling dynamic envelope peaks up to 200 W PEP. Use Value: Withstands 5:1 VSWR at full power, eliminating need for external isolators in shared-antenna configurations. |
| 3GPP TM1 Compliant PA | High-Efficiency CW Booster |
Use Scenario: Single-carrier WCDMA PA stage compliant with 3GPP Test Model 1 (TM1), 16 DPCH, 67% clipping. IC Role / Device Role / Timing Role: Linear RF power amplifier operating at 2140 MHz, 30 V, P/AR = 8.5 dB, 3.84 MHz bandwidth. Use Value: Achieves 70 W average output power and 34% drain efficiency - enabling higher output per stage and reduced system-level power conversion loss. |
Use Scenario: Fixed-frequency CW booster in test equipment or repeater applications at 2170 MHz. IC Role / Device Role / Timing Role: High-efficiency saturated amplifier delivering 220 W at P–1dB with 54% drain efficiency. Use Value: Enables compact, air-cooled designs due to 0.28 °C/W RθJC and 625 W total dissipation rating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PTFA220101FV4R250XTMA1 | Same H-37260-2 earless flange package; 220 W PEP rating; slightly lower gain (15.5 dB) at 2140 MHz | Optimized for space-constrained modules where flange footprint matters more than thermal slot access | Select when board-level mechanical clearance prohibits slotted flange mounting |
| PD85015L-E | STMicroelectronics 150 W LDMOS; 2110–2170 MHz; 15.2 dB gain; 26% efficiency; different H-36260-1 package | Limited to 150 W average output; requires revised heatsink interface due to non-slotted flange | Choose only if supply chain constraints require STMicro sourcing and 30% lower power meets system margin |
Compared with PTFA212001EV4R250XTMA1, the PTFA220101FV4R250XTMA1 offers identical thermal architecture with mechanical packaging trade-offs, while the PD85015L-E provides lower power and efficiency at the cost of requalification effort and reduced headroom in high-PAR deployments.
Availability
PTFA212001EV4R250XTMA1 is available at Aetrix Electronics and suitable for macro-cell base station power amplifiers, WCDMA dual-carrier transmitters, and 3GPP TM1-compliant RF systems requiring stable component supply despite its discontinued status.
Supply support for PTFA212001EV4R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power solutions for wireless infrastructure.
This part belongs to Infineon's PTFA series of thermally-enhanced LDMOS transistors, engineered specifically for carrier-class 3G/4G base station power amplifiers demanding high linearity, ruggedness, and thermal resilience.
FAQ
Is PTFA212001EV4R250XTMA1 still in production?
No - Infineon discontinued this part in 2017 per official documentation. However, Aetrix Electronics maintains legacy inventory with full traceability and supports long-term supply for ongoing production programs through controlled allocation and lifecycle coordination.
What is the maximum safe operating junction temperature?
The absolute maximum junction temperature is 200°C, with derating applied above 25°C ambient at 3.57 W/°C. At 200 W CW output and TCASE = 70°C, junction temperature remains within specification due to RθJC = 0.28 °C/W.
Can it replace PTFA212001F in existing designs?
Yes - PTFA212001EV4R250XTMA1 (slotted flange, H-36260-2) and PTFA212001F (earless flange, H-37260-2) share identical electrical specifications, biasing, and RF performance; only mechanical mounting differs. Thermal interface redesign may be needed for flange contact.
Does it require external gate protection beyond HBM Class 2?
No - the device integrates sufficient on-die ESD protection per HBM Class 2 (≥2 kV). However, standard RF PA layout practices - including short gate traces, local 0.1 µF bypassing, and controlled impedance routing - remain mandatory to prevent RF-induced gate stress.
PTFA212001EV4R250XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- H-36260-2
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 2.14GHz
- Gain:
- 15.8dB
- Voltage - Test:
- 30 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 1.6 A
- Power - Output:
- 50W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- H-36260-2
PTFA212001EV4R250XTMA1 FAQ
1.How can I place an order for PTFA212001EV4R250XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTFA212001EV4R250XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTFA212001EV4R250XTMA1 reliable?
The price and inventory of PTFA212001EV4R250XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFA212001EV4R250XTMA1 is usually 5 days.
3.What payment methods are accepted for PTFA212001EV4R250XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTFA212001EV4R250XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTFA212001EV4R250XTMA1?
PTFA212001EV4R250XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTFA212001EV4R250XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTFA212001EV4R250XTMA1?
For technical support, including PTFA212001EV4R250XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFA212001EV4R250XTMA1 requirements.
6.How does Aetrix verify that PTFA212001EV4R250XTMA1 is sourced from the original manufacturer or authorized distributors?
All PTFA212001EV4R250XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFA212001EV4R250XTMA1 meets industry standards.
7.What is the process for return or replacement of PTFA212001EV4R250XTMA1?
All PTFA212001EV4R250XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with PTFA212001EV4R250XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTFA212001EV4R250XTMA1 part is unused and in its original packaging.
Return procedure for PTFA212001EV4R250XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PTFA212001EV4R250XTMA1 Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP USA Inc.
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
