Infineon Technologies PTFA212001EV4XWSA1

Overview

PTFA212001EV4XWSA1 from Infineon Technologies is a 30 V, 180 W RF power LDMOS transistor in H-36260-2 package, optimized for 2.1–2.2 GHz cellular base station amplifiers with 15 dB gain and 65% drain efficiency at 2.14 GHz. It serves as the final-stage RF power amplifier in macrocell BTS transmitters.

For engineers reviewing the PTFA212001EV4XWSA1 datasheet, PTFA212001EV4XWSA1 pinout, PTFA212001EV4XWSA1 application, or PTFA212001EV4XWSA1 equivalent, key selection criteria include P1dB (180 W), frequency range (2.1–2.2 GHz), thermal resistance (0.22 °C/W), gate bias stability, and ruggedness under VSWR ≥10:1 load mismatch.

Technical Context

This LDMOS device employs a single-ended, common-source configuration with integrated ESD protection on gate terminals. Its silicon-on-ceramic substrate enables high thermal conductivity and stable operation under continuous-wave and modulated LTE/5G NR signal conditions.

The transistor supports Class AB biasing with V_GS = −1.7 V typical and V_DS = 30 V supply. It delivers linearized output up to 80 MHz instantaneous bandwidth when paired with digital predistortion (DPD) in multi-carrier systems.

Key Specifications

Pinout & Package

H-36260-2 is a ceramic/metal flanged package with solderable baseplate, designed for high-power RF applications requiring low-inductance source grounding and repeatable thermal path control. Dimensions: 36.0 mm × 26.0 mm × 4.0 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRFE6VP61K25HR5, PTFA212001EV4XWSA1 offers tighter thermal performance and better match to 2.1–2.2 GHz cellular allocation, while BLF2425M9LS160 lacks frequency alignment and voltage compatibility for this use case.

Availability

PTFA212001EV4XWSA1 is available at Aetrix Electronics and suitable for macrocell base stations, 5G massive MIMO active antenna units, and remote radio head deployments requiring stable component supply and long-term lifecycle support.

Supply support for PTFA212001EV4XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and RF solutions, with leadership in silicon-based RF power devices for wireless infrastructure.

PTFA212001EV4XWSA1 belongs to Infineon's OptiMOS™ RF LDMOS product line, engineered specifically for high-efficiency, ruggedized 5G and 4G LTE base station power amplifiers operating between 1.8–2.7 GHz.

FAQ

What is the recommended gate bias voltage for PTFA212001EV4XWSA1 in Class AB operation?

The typical gate bias voltage is −1.7 V at V_DS = 30 V and I_DQ = 1.2 A, measured under CW conditions at 25°C. This setting achieves optimal trade-off between gain flatness and intermodulation distortion across 2.1–2.2 GHz. Bias stability is ensured via on-board gate regulation circuitry in compliant evaluation boards.

Does PTFA212001EV4XWSA1 require external ESD protection on the gate pin?

No external ESD protection is required: the device integrates Class 2 HBM (>2 kV) and Class C CDM (>1 kV) protection on the gate terminal. Layout best practices still mandate short, low-inductance gate traces and avoidance of floating metal near Pin 2 to prevent field-induced overstress.

Can PTFA212001EV4XWSA1 be operated at 28 V instead of 30 V for improved reliability?

Yes - operation at 28 V is supported and reduces peak electric field stress in the channel, extending lifetime under thermal cycling. However, P1dB drops to ~165 W and gain decreases by ~0.4 dB; system-level DPD re-tuning is required to maintain ACLR performance.

What is the maximum allowable case temperature during continuous operation?

The maximum rated case temperature is 115°C per Infineon's qualification test standard. Sustained operation above 105°C requires derating of output power per the thermal curve in datasheet Figure 12; at 115°C case, P1dB must be limited to ≤140 W to ensure 1 million-hour MTTF.