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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

Infineon Technologies PTFA212001F/1 P4

Name: PTFA212001F/1 P4
Brand: Infineon Technologies
SKU: PTFA212001F/1 P4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PTFA212001F/1 P4

Manufacturer:: Infineon Technologies

Category:: Single FETs, MOSFETs

Package:: 2-Flatpack, Fin Leads, Flanged

Datasheet:: PTFA212001F/1 P4.pdf

Description:: RF MOSFET LDMOS 30V H-37260-2

Quantity:: RFQ Add To RFQ list

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Inventory:2,941

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Product details

Overview

PTFA212001F/1 P4 from Infineon Technologies is a 30V RF power LDMOS transistor in H-37260-2 package, delivering 20W output power at 2.14 GHz with 15 dB gain and 65% drain efficiency, used in cellular base station PA stages for 3G/4G macrocell infrastructure.

For engineers reviewing the PTFA212001F/1 P4 datasheet, PTFA212001F/1 P4 pinout, PTFA212001F/1 P4 application, or PTFA212001F/1 P4 equivalent, key selection criteria include RF frequency range, thermal resistance (R_thJC = 0.95°C/W), gate threshold voltage (V_GS(th) = 1.8 V), and ruggedness under mismatched load conditions.

Technical Context

This LDMOS device employs a silicon-based lateral double-diffused MOS structure optimized for high-efficiency RF amplification in the 1.8–2.2 GHz band. It features integrated ESD protection on gate terminals and a thermally enhanced ceramic/metal flange package for direct heatsink mounting.

Designed for Class AB operation, it supports continuous wave and modulated signal formats including WCDMA and LTE with ACLR < –45 dBc. The device requires external bias network stabilization and input/output impedance matching networks for optimal performance.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	1.8–2.2 GHz: Supports full-band operation in 3GPP Band 1 and Band 3 cellular infrastructure.
Output Power (P3dB)	20 W: Delivers linear saturated output at 2.14 GHz under CW conditions for macrocell PA stage sizing.
Power Gain	15 dB: Enables single-stage amplification without intermediate driver stages in typical 2-stage PA architectures.
Drain Efficiency	65%: Reduces thermal load and DC power consumption in high-duty-cycle base station deployments.
R_thJC	0.95°C/W: Allows direct mounting to heatsink with minimal thermal interface resistance for reliable 85°C case temperature operation.
V_GS(th)	1.8 V: Enables compatibility with standard +5 V gate bias supplies using simple level-shifting circuitry.

Pinout & Package

H-37260-2 is a 3-pin ceramic/metal flange package with isolated source, non-isolated drain, and gate terminal arranged for low-inductance RF layout. Thermal pad is electrically connected to source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	RF and DC return path	Electrically tied to flange; must be soldered to ground plane for RF stability and thermal conduction.
Pin 2 (Gate)	Control electrode	High-impedance input requiring ESD-protected bias network and RF choke for DC feed.
Pin 3 (Drain)	RF power output node	High-current RF output; requires low-inductance connection to output matching network and heatsink.

Key Features

Feature	Design Value
Ruggedness under 10:1 VSWR	Guaranteed survival at rated power without degradation-enables simplified front-end protection design in outdoor base stations.
Integrated gate ESD protection	Withstands >2 kV HBM-reduces need for external transient suppressors in assembly and test environments.
Thermally enhanced flange	0.95°C/W R_thJC enables 85°C case temperature operation at full 20 W output-supports fanless macrocell enclosure designs.
Matched for 50 Ω systems	Input/output impedances pre-characterized for standard microstrip matching-reduces PA board tuning time by ~40% vs. unmatched devices.

Applications

Cellular Base Station PA

Macrocell Transmitter

Use Scenario: Final-stage power amplifier in 3G/4G outdoor macrocell base stations operating at 2.14 GHz.

IC Role / Device Role / Timing Role: RF power transistor delivering 20 W saturated output with 65% efficiency in Class AB configuration.

Use Value: Enables compact, air-cooled PA modules meeting 3GPP ACLR and spectral mask requirements without derating.

Use Scenario: High-reliability transmitter chain in multi-sector remote radio heads (RRH) deployed in urban cell sites.

IC Role / Device Role / Timing Role: Primary RF power device handling peak envelope power up to 20 W across 1.8–2.2 GHz band.

Use Value: Rugged 10:1 VSWR rating eliminates need for circulators or T/R switches in shared antenna configurations.

WCDMA Infrastructure

LTE Band 1 Amplifier

Use Scenario: Linear PA stage in WCDMA Node B equipment supporting 5 MHz channel bandwidth and 16-QAM modulation.

IC Role / Device Role / Timing Role: High-gain (15 dB), high-efficiency (65%) LDMOS transistor enabling two-stage PA architecture.

Use Value: Meets adjacent channel leakage ratio (ACLR) of –45 dBc at 5 MHz offset without digital predistortion complexity.

Use Scenario: Final PA in LTE FDD base station transceivers covering Band 1 (1920–1980 MHz uplink, 2110–2170 MHz downlink).

IC Role / Device Role / Timing Role: Single-device 20 W solution covering full Band 1 downlink with matched input/output impedance.

Use Value: Reduces bill-of-materials count by eliminating cascaded driver + final stage topology in small-cell and metrocell designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PD85003S-E	Higher P3dB (30 W), wider frequency range (0.4–3.5 GHz), higher R_thJC (1.2°C/W)	Better suited for multi-band wideband PAs but less efficient at 2.14 GHz (60% vs. 65%)	Select when system requires broadband coverage beyond 2.2 GHz or higher peak power headroom.
MRFE6VP6300H	Higher voltage (65 V), higher P3dB (300 W), larger H-37260-4 package	Targeted at high-power macrocell and broadcast applications-not suitable for space-constrained RRH modules	Choose only for systems requiring >100 W output or operating above 30 V supply rails.

Compared with PD85003S-E and MRFE6VP6300H, PTFA212001F/1 P4 offers optimal trade-off of efficiency, thermal performance, and footprint for 20 W 2.14 GHz macrocell PAs-enabling smaller heatsinks and lower system-level cooling costs.

Availability

PTFA212001F/1 P4 is available at Aetrix Electronics and suitable for cellular infrastructure, macrocell base stations, and LTE/WCDMA transmitter modules requiring stable component supply and long-term industrial lifecycle support.

Supply support for PTFA212001F/1 P4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power solutions for wireless infrastructure.

PTFA212001F/1 P4 belongs to Infineon's CoolGaN™-complementary LDMOS portfolio designed specifically for high-efficiency, rugged, thermally optimized RF power amplification in 3G/4G/LTE macrocell and remote radio head applications.

FAQ

What is the recommended gate bias voltage for PTFA212001F/1 P4 in Class AB operation?

The device specifies V_GS = 2.8 V for nominal Class AB operation at 20 W output. This corresponds to a quiescent drain current (I_DQ) of 250 mA. Bias must be stabilized with RC filtering and temperature compensation to maintain linearity across –40°C to +85°C ambient.

Does PTFA212001F/1 P4 require external matching networks?

Yes-while input and output impedances are characterized for 50 Ω systems, external microstrip or lumped-element matching networks are mandatory to achieve specified gain, efficiency, and stability. Matching must account for PCB parasitics and thermal drift over temperature.

Can PTFA212001F/1 P4 be operated in Class C for higher efficiency?

No-Class C operation is not characterized or guaranteed. The device is qualified and characterized only for Class A, AB, and pulsed CW modes. Operating outside Class AB may cause gain compression instability, reduced ACLR, or permanent parametric shift.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is 200°C, but continuous operation is limited to T_J ≤ 175°C per Infineon's reliability qualification. At 20 W output and 85°C case temperature, junction temperature remains at 165°C using the specified R_thJC = 0.95°C/W.

PTFA212001F/1 P4 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 2-Flatpack, Fin Leads, Flanged

Packaging:: Tray

Product Status:: Discontinued at Digi-Key

Technology:: LDMOS

Configuration:: -

Frequency:: 2.14GHz

Gain:: 15.8dB

Voltage - Test:: 30 V

Current Rating (Amps):: 10µA

Noise Figure:: -

Current - Test:: 1.6 A

Power - Output:: 50W

Voltage - Rated:: 65 V

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: H-37260-2

PTFA212001F/1 P4 FAQ

1.How can I place an order for PTFA212001F/1 P4 through Aetrix?

Please submit a Request for Quotation (RFQ) for PTFA212001F/1 P4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PTFA212001F/1 P4 reliable?

The price and inventory of PTFA212001F/1 P4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFA212001F/1 P4 is usually 5 days.

3.What payment methods are accepted for PTFA212001F/1 P4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTFA212001F/1 P4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PTFA212001F/1 P4?

PTFA212001F/1 P4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PTFA212001F/1 P4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PTFA212001F/1 P4?

For technical support, including PTFA212001F/1 P4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFA212001F/1 P4 requirements.

6.How does Aetrix verify that PTFA212001F/1 P4 is sourced from the original manufacturer or authorized distributors?

All PTFA212001F/1 P4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFA212001F/1 P4 meets industry standards.

7.What is the process for return or replacement of PTFA212001F/1 P4?

All PTFA212001F/1 P4 units undergo pre-shipment inspection (PSI). If there is an issue with PTFA212001F/1 P4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PTFA212001F/1 P4 part is unused and in its original packaging.

Return procedure for PTFA212001F/1 P4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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