Infineon Technologies PTFA241301E V1

Overview

PTFA241301E from Infineon Technologies is a thermally-enhanced 130 W RF LDMOS FET optimized for ultra-linear broadband amplification in 2420–2480 MHz base station power stages. It delivers 25 W average output power with 14 dB linear gain and –50 dBc adjacent channel power ratio under three-carrier CDMA2000 conditions at 2450 MHz, supporting WiMAX and Super3G infrastructure.

For engineers reviewing the PTFA241301E datasheet, PTFA241301E pinout, PTFA241301E application, or PTFA241301E equivalent, key selection criteria include its 28 V operation, 1150 mA quiescent drain current, 0.40 °C/W junction-to-case thermal resistance, and H-30260-2 slotted flange package - all critical for high-reliability macrocell PA design.

Technical Context

This device is a single-ended, internally matched GaN-free LDMOS transistor designed for Class AB linear amplifier stages in multi-standard wireless infrastructure. Its broadband matching (2420–2480 MHz) enables operation across CDMA2000, WiMAX, and 3GPP TSG RAN bands without external tuning networks.

The FET integrates ESD protection per HBM Class 2, supports 10:1 VSWR tolerance at 130 W CW, and exhibits low HCI drift with full gold metallization - enabling stable performance over extended thermal cycles in outdoor base station enclosures.

Key Specifications

Pinout & Package

H-30260-2 is a thermally-enhanced slotted flange, single-ended metal-ceramic package with integrated source tab for direct heatsink attachment and optimized RF grounding. The flange is electrically connected to the source terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA241301F, the PTFA241301E offers identical RF performance but superior thermal interface via slotted flange for higher reliability in sustained 130 W operation; versus PD85015-E, it provides 1.7× higher average power and 0.5 dB better ACPR at the cost of larger footprint and higher bias current.

Availability

PTFA241301E is available at Aetrix Electronics and suitable for macrocell base station transmitters, WiMAX infrastructure equipment, and 3GPP-compliant Node B designs requiring stable component supply across multi-year production cycles.

Supply support for PTFA241301E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power devices for wireless infrastructure.

The PTFA241301E belongs to Infineon's GOLDMOS® LDMOS portfolio, engineered specifically for ultra-linear, thermally robust final-stage amplification in multi-standard cellular base stations.

FAQ

What is the maximum safe operating drain voltage for PTFA241301E?

The absolute maximum drain-source voltage (V_DSS) is 65 V, but the device is characterized and qualified for continuous operation at 28 V DC supply. Exceeding 28 V risks exceeding safe operating area limits under RF load, especially above 1150 mA quiescent current. Derating is required above 25°C ambient per the 2.5 W/°C thermal derating curve.

Does PTFA241301E require external gate bias sequencing?

No external gate bias sequencing is required. The device operates with a fixed V_GS of 2.4 V (typical) at 1150 mA IDQ, supplied directly via a stable low-noise DC source. However, a series gate resistor (e.g., 5.1 kΩ) is recommended for stability and ESD current limiting, as shown in the reference schematic on page 7 of the datasheet.

Can PTFA241301E be used in pulsed RF applications?

Yes - the device supports pulsed operation with 1% duty cycle (e.g., 80 µs pulse width, 800 µs period), delivering up to 51.5 dBm P–1dB output at 2420 MHz. Pulse testing confirms robustness, but thermal management must still account for peak power dissipation during active periods due to the 0.40 °C/W R_θJC.

Is the H-30260-2 package RoHS-compliant and lead-free?

Yes - the PTFA241301E features thermally-enhanced packaging that is Pb-free and RoHS-compliant, as explicitly stated in the "Features" section of the datasheet (Rev. 05, 2007). The gold metallization and ceramic/metal construction meet JEDEC J-STD-020 moisture sensitivity level 3 requirements.