Infineon Technologies PTFB093608FVV2R250XTMA1

Overview

PTFB093608FVV2R250XTMA1 from Infineon Technologies is a 900 MHz RF power LDMOS transistor rated for 36 W output power, 28 V drain supply, and 17 dB gain at 945 MHz with 50% efficiency; used in cellular base station final-stage amplifiers for macrocell BTS applications.

For engineers reviewing the PTFB093608FVV2R250XTMA1 datasheet, PTFB093608FVV2R250XTMA1 pinout, PTFB093608FVV2R250XTMA1 application, or PTFB093608FVV2R250XTMA1 equivalent, key selection criteria include RF frequency band support (869–960 MHz), thermal resistance (0.55 °C/W), and ruggedness under mismatched load conditions (VSWR ≥ 10:1).

Technical Context

This LDMOS device employs a silicon-based laterally diffused MOS structure optimized for high-efficiency RF power amplification in Class AB operation. It integrates a monolithic gate structure with integrated ESD protection and is designed for broadband operation across the 869–960 MHz band.

Thermal performance is enabled by a copper-tungsten flange and ceramic-metal package enabling direct heatsink mounting. The device supports pulsed and continuous-wave operation with specified linearity metrics (ACPR < –35 dBc at 945 MHz) for 3G/4G LTE signal modulation.

Key Specifications

Pinout & Package

Package: PG-HB261-1 (ceramic/metal flange-mount, 26.1 mm × 26.1 mm × 4.2 mm), thermally enhanced for high-power RF operation with solderable flange and isolated source terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRFE6VP6360HR5 and QPD1025, PTFB093608FVV2R250XTMA1 offers optimal balance of proven reliability, 28 V compatibility, and thermal robustness for cost-sensitive macrocell deployments where GaN adoption is not yet justified.

Availability

PTFB093608FVV2R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base stations, UMTS/LTE infrastructure transmitters, and multi-band RF power amplifier modules requiring stable component supply and long-term industrial lifecycle support.

Supply support for PTFB093608FVV2R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power solutions for wireless infrastructure.

PTFB093608FVV2R250XTMA1 belongs to Infineon's OptiMOS™ RF LDMOS product line, engineered specifically for high-reliability, high-efficiency macrocell and microcell base station power amplifiers operating below 1 GHz.

FAQ

What is the recommended gate bias voltage for PTFB093608FVV2R250XTMA1 in Class AB operation?

The datasheet specifies a nominal gate bias voltage of –2.5 V for Class AB operation at 28 V drain supply and 945 MHz. This setting achieves optimal trade-off between gain, efficiency, and linearity. Bias must be applied through a low-noise, low-ripple supply with RC filtering to prevent oscillation; gate current remains below 100 nA at this setting.

Does PTFB093608FVV2R250XTMA1 require external ESD protection on the gate terminal?

No. The device integrates HBM Class 2 ESD protection (≥2 kV) on the gate terminal per JEDEC JS-001, eliminating the need for external TVS diodes or RC snubbers in standard PCB layouts. However, proper grounding and short gate traces remain essential to preserve RF stability and ESD robustness.

Can PTFB093608FVV2R250XTMA1 operate reliably at ambient temperatures above 70 °C?

Yes. With its 0.55 °C/W RθJC and 200 °C maximum junction temperature, the device supports operation at 85 °C ambient when mounted on a heatsink with ≤0.35 °C/W total thermal resistance (heatsink + interface). Derating curves in the datasheet confirm 36 W output is maintainable up to 75 °C ambient under these conditions.

What is the minimum recommended output matching network impedance for optimal ACPR performance?

For ACPR < –35 dBc with 5 MHz LTE signals at 945 MHz, the datasheet specifies a fundamental load impedance of 3.5 Ω real part at the drain reference plane. Output matching must present this impedance while suppressing 2nd and 3rd harmonics to < –25 dBc; a 3-pole low-pass topology with 50 Ω system interface is validated in the application note AN327.