Infineon Technologies PTFB093608SVV2R250XTMA1

Overview

PTFB093608SVV2R250XTMA1 from Infineon Technologies is a high-efficiency LDMOS RF power transistor designed for 960 MHz WCDMA base station final-stage amplification. It delivers 100 W average output power (54 dBm), 19.5 dB gain, and 38% efficiency under 3GPP two-carrier WCDMA conditions (PAR = 8 dB, 10 MHz spacing) at V_DD = 28 V and I_DQ = 2.8 A.

For engineers reviewing the PTFB093608SVV2R250XTMA1 datasheet, PTFB093608SVV2R250XTMA1 pinout, PTFB093608SVV2R250XTMA1 application, or PTFB093608SVV2R250XTMA1 equivalent, key selection criteria include broadband gain flatness (±0.5 dB from 860–1020 MHz), ACPR performance (−47 dBc at 5 MHz offset), thermal resistance (0.25 °C/W), dual-gate/dual-drain configuration, and RoHS-compliant overmolded plastic package.

Technical Context

This device operates as a Class AB RF power amplifier stage in macrocell and remote radio head (RRH) transmitters. Its dual-gate/dual-drain topology supports balanced input/output matching and enables high linearity with low IMD3 (−35 dBc) and ACPR up to −48 dBc across the 860–1020 MHz band.

The transistor uses thermally enhanced plastic overmold packaging with copper-tungsten baseplate for direct heatsink mounting. Internal gate protection diodes and ESD robustness (>2 kV HBM) support rugged handling during board assembly and field operation in outdoor BTS enclosures.

Key Specifications

Pinout & Package

PTFB093608SVV2R250XTMA1 is housed in an overmolded plastic package (PG-HB2D-10-1) with exposed copper-tungsten baseplate for thermal conduction. The 10-pin leadframe features dual gate and dual drain terminals for symmetrical push-pull or Doherty configuration implementation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with PTFB093608SVV2R250XTMA1, the XTMA2 variant offers identical RF performance with updated packaging logistics, while PD85015-E trades 40 W output headroom for improved gain and reduced thermal resistance-making it suitable for space-constrained but less power-demanding deployments.

Availability

PTFB093608SVV2R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, Doherty amplifier modules, and WCDMA repeater systems requiring stable component supply across multi-year telecom infrastructure programs.

Supply support for PTFB093608SVV2R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon carbide and LDMOS RF power solutions for wireless infrastructure.

PTFB093608SVV2R250XTMA1 belongs to Infineon's OptiMOS™ RF LDMOS product line, engineered specifically for high-efficiency, high-linearity cellular base station amplifiers operating in sub-1 GHz frequency bands.

FAQ

What is the maximum continuous drain current rating for PTFB093608SVV2R250XTMA1?

The device is rated for 2.8 A quiescent drain current (I_DQ) at V_DD = 28 V under pulsed CW conditions (12 µs, 10% duty cycle). Peak pulsed current exceeds 12 A, but continuous operation must remain within thermal limits defined by junction temperature (T_J ≤ 200 °C) and heatsink capability.

Does PTFB093608SVV2R250XTMA1 require external gate protection diodes?

No. The part integrates monolithic gate protection diodes rated for ≥2 kV HBM ESD, eliminating the need for discrete TVS devices in standard handling and PCB assembly environments. External RF chokes and DC blocking capacitors remain required per the reference circuit in the datasheet.

Can PTFB093608SVV2R250XTMA1 operate efficiently at 800 MHz for LTE Band V applications?

Yes. Measured gain remains ≥18.5 dB and efficiency ≥35% at 800 MHz under 3GPP WCDMA conditions. The broadband design supports 860–1020 MHz as specified, but usable performance extends down to 750 MHz with minor gain roll-off (<1 dB) and acceptable ACPR degradation (−44 dBc).

What is the recommended minimum PCB copper area for thermal management?

Infineon specifies ≥12 cm² of 2-oz copper connected directly to the exposed baseplate via ≥12 thermal vias (0.3 mm diameter, 0.8 mm pitch). This achieves the rated 0.25 °C/W R_thJC; reducing copper area increases thermal resistance linearly-e.g., 6 cm² raises R_thJC to ~0.45 °C/W.