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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

Infineon Technologies PTFB191501EV1R250XTMA1

Name: PTFB191501EV1R250XTMA1
Brand: Infineon Technologies
SKU: PTFB191501EV1R250XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PTFB191501EV1R250XTMA1

Manufacturer:: Infineon Technologies

Category:: Single FETs, MOSFETs

Package:: 2-Flatpack, Fin Leads

Datasheet:: PTFB191501EV1R250XTMA1.pdf

Description:: RF MOSFET LDMOS 30V H-36248-2

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PTFB191501EV1R250XTMA1 from Infineon is a thermally-enhanced 150 W LDMOS RF power transistor for single- and two-carrier WCDMA/CDMA base station amplifiers operating at 1930–1990 MHz. It delivers 35 W average output power, 18 dB linear gain, and 30% drain efficiency under two-carrier WCDMA conditions (30 V, 1990 MHz, PAR = 8 dB), with integrated ESD protection (HBM Class 2) and 10:1 VSWR ruggedness.

For engineers reviewing the PTFB191501EV1R250XTMA1 datasheet, PTFB191501EV1R250XTMA1 pinout, PTFB191501EV1R250XTMA1 application, or PTFB191501EV1R250XTMA1 equivalent, key selection criteria include broadband internal matching, negative gate-source voltage range for Doherty peaking operation, thermal resistance of 0.29 °C/W, RoHS-compliant slotted-flange H-36248-2 package, and verified two-tone IMD performance down to –35 dBc.

Technical Context

This device is a single-ended, enhancement-mode N-channel LDMOS FET optimized for high-efficiency, high-linearity RF power amplification in cellular infrastructure. Its design supports both continuous-wave (CW) operation (150 W P_–1dB, 55% efficiency) and modulated signal handling (35 W avg, 30% efficiency, –35 dBc IMD) across the 1930–1990 MHz band with fixed 30 V drain supply and 1.2 A quiescent drain current.

The transistor integrates input/output broadband matching networks and features a robust gate structure enabling extended negative V_GS swing-critical for asymmetrical Doherty amplifier configurations. Thermal stability is ensured via low HCI drift and a junction-to-case thermal resistance of 0.29 °C/W under 200 W CW conditions at T_CASE = 70 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	1930–1990 MHz - fully characterized for WCDMA/CDMA macrocell bands
Output Power (CW, P_–1dB)	150 W at 1990 MHz, 30 V - enables high-power final-stage amplification
Output Power (2-Carrier WCDMA)	35 W avg at 1990 MHz, PAR = 8 dB - meets 3GPP spectral mask requirements
Linear Gain	18 dB typical - reduces driver stage complexity and cascaded noise figure
Drain Efficiency	30% (WCDMA), 55% (CW) - balances linearity and thermal load in deployed systems
Intermodulation Distortion	–35 dBc (2-tone WCDMA) - ensures adjacent channel leakage compliance
Thermal Resistance R_θJC	0.29 °C/W - supports high-power density mounting on heatsinks with slotted flange
V_SWR Tolerance	10:1 @ 30 V, 150 W CW - protects against antenna mismatch-induced failure

Pinout & Package

Package: H-36248-2 - thermally enhanced, slotted-flange, single-ended metal-ceramic package with RoHS-compliant finish and earless mounting interface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	High-power RF output node	Connected directly to flange and heatsink; carries full RF output current and DC bias
Source (S)	RF ground reference and DC return path	Internally bonded to flange; forms low-inductance RF ground for stability
Gate (G)	RF input control terminal	ESD-protected, high-impedance node requiring external bias network and impedance matching

Key Features

Feature	Design Value
Broadband internal matching	Reduces external matching component count and layout sensitivity across 1930–1990 MHz
Extended negative V_GS range	Enables precise gate bias control in Doherty peaking amplifiers without external level-shifting
Integrated HBM Class 2 ESD protection	Eliminates need for discrete gate protection diodes in production assemblies
0.29 °C/W R_θJC	Permits >150 W CW operation with standard heatsink designs and forced-air cooling
10:1 VSWR ruggedness	Ensures field reliability in real-world antenna environments without foldback circuitry

Applications

Macrocell Base Station Transmitter

Doherty Power Amplifier Stage

Use Scenario: Final-stage RF power amplification in 3G WCDMA macrocell base stations operating in Band II (1930–1990 MHz).

IC Role / Device Role / Timing Role: High-efficiency, high-linearity LDMOS transistor delivering 35 W average output under 3GPP-compliant two-carrier signals.

Use Value: Meets ACLR and EVM specifications without digital pre-distortion overhead, reducing system-level complexity.

Use Scenario: Peaking amplifier in asymmetrical Doherty architecture for improved back-off efficiency in LTE/WCDMA base stations.

IC Role / Device Role / Timing Role: Active device biased in Class-C, activated above 6 dB power back-off to restore efficiency.

Use Value: Leverages extended negative V_GS capability for precise turn-on threshold control and reduced gate drive loss.

High-Power CW RF Source

Test & Measurement Signal Generator Output Stage

Use Scenario: Continuous-wave RF source for EMC immunity testing, RF heating, or broadcast auxiliary transmission.

IC Role / Device Role / Timing Role: Primary power device delivering 150 W at P_–1dB with 55% drain efficiency and stable thermal behavior.

Use Value: Enables compact, air-cooled CW sources without liquid cooling or complex thermal management subsystems.

Use Scenario: Final output stage in programmable RF signal generators requiring wide dynamic range and spectral purity.

IC Role / Device Role / Timing Role: Linearized RF power device supporting multi-tone and OFDM waveforms up to 20 MHz bandwidth.

Use Value: Delivers –35 dBc IMD and <0.5% EVM at 35 W avg, enabling calibration-grade signal fidelity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PTFB191501FV1R250XTMA1	H-37248-2 earless flange package; identical RF specs but different mechanical mounting interface	Requires revised heatsink cutout and torque specification due to flange geometry change	Select when earless flange simplifies automated assembly or improves mechanical repeatability in high-volume production
PD57018-E	180 W CW rating, 1930–2170 MHz range, higher gain (19.5 dB), no integrated ESD protection	Supports wider frequency coverage including AWS-3 and PCS bands but requires external ESD diodes	Select when broader band coverage or higher CW headroom is prioritized over integrated protection and legacy compatibility

Compared with PTFB191501FV1R250XTMA1, this part offers identical RF performance with slotted-flange thermal advantages; versus PD57018-E, it trades bandwidth and peak power for proven WCDMA linearity, integrated ESD, and mature qualification in macrocell deployments.

Availability

PTFB191501EV1R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base station transmitters, Doherty amplifier modules, and high-power RF test equipment requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial and telecom infrastructure programs.

Supply support for PTFB191501EV1R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power solutions for wireless infrastructure.

This part belongs to Infineon's PTFB series of thermally enhanced LDMOS transistors, designed specifically for high-efficiency, high-reliability RF power amplification in 3G/4G macrocell base stations and test instrumentation.

FAQ

What is the maximum safe operating drain voltage for PTFB191501EV1R250XTMA1?

The absolute maximum drain-source voltage (V_DSS) is 65 V, but the device is characterized and qualified for reliable operation at 30 V DC supply in RF power amplifier applications. Exceeding 30 V risks exceeding thermal limits and degrading long-term reliability, even if below the 65 V breakdown rating.

Does PTFB191501EV1R250XTMA1 require external gate protection diodes?

No. The device integrates ESD protection rated to Human Body Model Class 2 (minimum), eliminating the need for discrete gate protection diodes in standard PCB layouts. This simplifies design, reduces bill-of-materials cost, and improves RF matching consistency across production units.

Can PTFB191501EV1R250XTMA1 be used in Doherty amplifier configurations?

Yes. Its extended negative gate-source voltage range enables precise control of the peaking amplifier's turn-on threshold without external level shifters. Verified performance in asymmetrical Doherty topologies is documented in Infineon application notes for 3G/4G macrocell deployments.

What is the recommended gate bias voltage for linear WCDMA operation?

The typical gate-source voltage (V_GS) is 2.9 V at I_DQ = 1.2 A and V_DD = 30 V. For optimal linearity and efficiency trade-off in two-carrier WCDMA, V_GS should be set between 2.4 V and 3.4 V, with 2.9 V providing best balance per characterization data at 1990 MHz.

PTFB191501EV1R250XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 2-Flatpack, Fin Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: LDMOS

Configuration:: -

Frequency:: 1.99GHz

Gain:: 18dB

Voltage - Test:: 30 V

Current Rating (Amps):: -

Noise Figure:: -

Current - Test:: 1.2 A

Power - Output:: 150W

Voltage - Rated:: 65 V

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: H-36248-2

PTFB191501EV1R250XTMA1 FAQ

1.How can I place an order for PTFB191501EV1R250XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for PTFB191501EV1R250XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PTFB191501EV1R250XTMA1 reliable?

The price and inventory of PTFB191501EV1R250XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFB191501EV1R250XTMA1 is usually 5 days.

3.What payment methods are accepted for PTFB191501EV1R250XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTFB191501EV1R250XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PTFB191501EV1R250XTMA1?

PTFB191501EV1R250XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PTFB191501EV1R250XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PTFB191501EV1R250XTMA1?

For technical support, including PTFB191501EV1R250XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFB191501EV1R250XTMA1 requirements.

6.How does Aetrix verify that PTFB191501EV1R250XTMA1 is sourced from the original manufacturer or authorized distributors?

All PTFB191501EV1R250XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFB191501EV1R250XTMA1 meets industry standards.

7.What is the process for return or replacement of PTFB191501EV1R250XTMA1?

All PTFB191501EV1R250XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with PTFB191501EV1R250XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PTFB191501EV1R250XTMA1 part is unused and in its original packaging.

Return procedure for PTFB191501EV1R250XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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