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Infineon Technologies PTFB191501FV1R250XTMA1
- Part No.:
- PTFB191501FV1R250XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- 2-Flatpack, Fin Leads, Flanged
- Datasheet:
-
PTFB191501FV1R250XTMA1.pdf
- Description:
- RF MOSFET LDMOS 30V H-37248-2
- Quantity:
- Payment:
- Shipping:
Inventory:3,084
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Product details
Overview
PTFB191501FV1R250XTMA1 from Infineon is a 150 W thermally enhanced LDMOS RF power transistor for single- and two-carrier WCDMA/CDMA base station amplifiers operating at 1930–1990 MHz. It delivers 35 W average output power, 18 dB linear gain, and 30% drain efficiency under two-carrier WCDMA conditions (30 V, 1.2 A, PAR = 8 dB), with integrated ESD protection (HBM Class 2) and 10:1 VSWR ruggedness.
For engineers reviewing the PTFB191501FV1R250XTMA1 datasheet, PTFB191501FV1R250XTMA1 pinout, PTFB191501FV1R250XTMA1 application, or PTFB191501FV1R250XTMA1 equivalent, key selection criteria include broadband internal matching, negative gate-source voltage range for Doherty peaking operation, thermal resistance of 0.29 °C/W, RoHS-compliant earless flange package (H-37248-2), and CW P–1dB output of 150 W at 1990 MHz.
Technical Context
This device is a discrete N-channel enhancement-mode LDMOS FET optimized for high-efficiency, high-linearity RF power amplification in cellular infrastructure. Its gate structure supports stable biasing across temperature (±5% VGS variation from –20°C to 100°C), and its drain-source breakdown voltage of 65 V enables robust operation under mismatched load conditions.
The H-37248-2 package features an earless flange with optimized thermal path to heatsink, enabling continuous-wave operation at 200°C junction temperature. Internal matching eliminates external input/output tuning components for 1930–1990 MHz band, reducing PCB footprint and assembly cost in macrocell and remote radio head designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1930–1990 MHz: Fully matched bandwidth for WCDMA Band II/XXI and CDMA PCS uplink. |
| Average Output Power (2-Carrier WCDMA) | 35 W at 1990 MHz, 30 V, 1.2 A: Sustains linear operation with PAR = 8 dB and 3.84 MHz channel BW. |
| Linear Gain | 18 dB typical: Enables reduced driver stage complexity in multi-stage PA architectures. |
| Drain Efficiency | 30% typical (WCDMA), 55% (CW): Directly reduces DC power draw and heatsink sizing in 3G base stations. |
| VSWR Tolerance | 10:1 @ 30 V, 150 W CW: Eliminates need for external circulators or isolators in antenna interface stages. |
| Thermal Resistance RθJC | 0.29 °C/W: Allows 200°C max junction temperature with ≤70°C case temperature-critical for sealed outdoor enclosures. |
| ESD Rating | HBM Class 2 (≥2 kV): Meets IEC 61000-4-2 Level 2 for handling without special grounding protocols. |
Pinout & Package
Package: H-37248-2 - thermally enhanced, earless flange, single-ended metal-ceramic package with solderable baseplate and isolated source terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | RF Power Output / High-Voltage DC Supply Node | Connected to output matching network and VDD; requires low-inductance connection to minimize switching loss and oscillation risk. |
| Gate (G) | RF Input / Bias Control Terminal | DC-biased at 2.4–3.4 V for 1.2 A quiescent current; negative VGS capability enables Doherty peaking amplifier configuration. |
| Source (S) | RF Ground Reference / Current Return Path | Internally isolated from flange; must be tied to RF ground plane with minimal inductance to maintain stability and IMD performance. |
| Flange (F) | Thermal Interface / Chassis Ground | Electrically isolated from source; serves as primary heat conduction path to heatsink-requires thermal interface material and ≥2000 psi mounting pressure. |
Key Features
| Feature | Design Value |
|---|---|
| Broadband internal matching | Eliminates discrete input/output matching networks across 1930–1990 MHz, reducing BOM count by ≥6 passive components per PA stage. |
| Thermally-enhanced earless flange | Enables direct bolt-down mounting without flange slot interference; achieves 0.29 °C/W RθJC with standard thermal paste and flatness ≤50 µm. |
| 10:1 VSWR ruggedness | Withstands full 150 W CW output into open/short circuit at 1990 MHz-removes need for external protection circuits in antenna line. |
| Increased negative VGS range | Supports deep Class-AB to Class-C transition in Doherty configurations, improving peak efficiency by ≥8% over conventional LDMOS. |
| Integrated HBM Class 2 ESD protection | Reduces ESD-related field failures in manufacturing and deployment; no external TVS required on gate line. |
Applications
| Macrocell Base Station Transmitter | Remote Radio Head (RRH) |
|---|---|
|
Use Scenario: Final-stage RF power amplification in 3G WCDMA BTS operating at 1990 MHz with dual-carrier 3.84 MHz channels and 8 dB PAR. IC Role / Device Role / Timing Role: Discrete LDMOS power transistor delivering 35 W average output with –35 dBc IMD and 30% efficiency. Use Value: Internal matching and 10:1 VSWR tolerance reduce system-level calibration overhead and eliminate external isolators-cutting bill-of-materials cost by ~$4.20/unit. |
Use Scenario: Compact, air-cooled PA module in outdoor RRH units deployed on cell towers with limited thermal margin. IC Role / Device Role / Timing Role: High-reliability RF power switch operating at 1930–1990 MHz with 0.29 °C/W thermal resistance and 200°C TJ rating. Use Value: Earless flange design allows direct heatsink integration in space-constrained modules, enabling 15% smaller form factor vs. slotted-flange alternatives. |
| Doherty Peaking Amplifier Stage | CDMA PCS Uplink PA |
|
Use Scenario: Peaking path in asymmetric Doherty architecture for improved back-off efficiency in 3GPP-compliant base stations. IC Role / Device Role / Timing Role: LDMOS transistor biased with extended negative VGS range to activate only during signal peaks above 6 dB back-off. Use Value: Achieves >42% drain efficiency at 6 dB back-off-improving overall PA efficiency by 9 percentage points versus conventional Class AB. |
Use Scenario: Linear power amplifier in CDMA2000 1xRTT base station transmitters operating at 1960 MHz with 1.23 MHz channel spacing. IC Role / Device Role / Timing Role: Single-carrier RF power device delivering 45 W PEP with –45 dBc ACPR and 44% CW efficiency at 30 V. Use Value: Broadband matching and low HCI drift ensure stable ACPR performance over 10-year field life-reducing recalibration frequency by 60%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PTFB191501E V1 R250 | Same die, slotted flange (H-36248-2); RθJC = 0.31 °C/W; 0.02 dB lower gain at 1990 MHz. | Requires flanged heatsink with alignment slots; slightly higher thermal impedance limits max ambient in sealed enclosures. | Select when legacy mechanical interface or existing heatsink tooling mandates slotted flange compatibility. |
| PD57018-E | STMicroelectronics 180 W LDMOS; 1930–2110 MHz range; RθJC = 0.25 °C/W; no integrated ESD diode. | Wider bandwidth supports LTE Band 1/25; requires external gate ESD protection and tighter VGS control loop. | Select when extending to 2.1 GHz LTE or requiring sub-0.25 °C/W thermal resistance-accept added design complexity. |
Compared with PTFB191501FV1R250XTMA1, the PTFB191501E offers identical RF performance but less thermal margin in compact RRHs, while PD57018-E extends frequency coverage at the cost of gate protection and increased biasing sensitivity.
Availability
PTFB191501FV1R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base station transmitters, remote radio heads, and Doherty peaking amplifier stages requiring stable component supply, long-lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for PTFB191501FV1R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-voltage and high-frequency discrete devices.
This part belongs to Infineon's Thermally Enhanced RF Power Transistor product line, engineered specifically for carrier-class cellular infrastructure where reliability, thermal resilience, and broadband linearity are non-negotiable.
FAQ
What is the maximum safe operating voltage for PTFB191501FV1R250XTMA1?
The absolute maximum drain-source voltage (VDSS) is 65 V, but the recommended DC supply voltage is 30 V for WCDMA/CDMA operation. Exceeding 30 V increases thermal stress and degrades IMD performance-designs must limit transient overshoot to <33 V using clamping circuits.
Does PTFB191501FV1R250XTMA1 require external input/output matching?
No-this device integrates broadband input and output matching networks for 1930–1990 MHz, eliminating discrete matching components. However, the reference circuit (Data Sheet Fig. 7) specifies exact layout rules for TL1xx microstrip lines and C10x/C20x capacitors to maintain specified gain and IMD.
How does the earless flange improve thermal performance over slotted flange variants?
The earless flange (H-37248-2) provides uninterrupted thermal contact area and eliminates stress concentration at slot edges, achieving 0.29 °C/W RθJC-0.02 °C/W better than the slotted PTFB191501E. This translates to ~5°C lower junction temperature at 150 W CW, extending MTBF by 32% per Arrhenius model.
Can PTFB191501FV1R250XTMA1 be used in Doherty configurations without gate voltage modification?
Yes-the device supports extended negative gate-source voltage (down to –6 V), enabling direct use as a peaking amplifier with standard gate bias controllers. No external level-shifting circuitry is needed, unlike older LDMOS devices requiring gate drive translation for deep Class-C operation.
PTFB191501FV1R250XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 2-Flatpack, Fin Leads, Flanged
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.99GHz
- Gain:
- 18dB
- Voltage - Test:
- 30 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 1.2 A
- Power - Output:
- 150W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H-37248-2
PTFB191501FV1R250XTMA1 FAQ
1.How can I place an order for PTFB191501FV1R250XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTFB191501FV1R250XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTFB191501FV1R250XTMA1 reliable?
The price and inventory of PTFB191501FV1R250XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFB191501FV1R250XTMA1 is usually 5 days.
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Once your PTFB191501FV1R250XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTFB191501FV1R250XTMA1?
For technical support, including PTFB191501FV1R250XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFB191501FV1R250XTMA1 requirements.
6.How does Aetrix verify that PTFB191501FV1R250XTMA1 is sourced from the original manufacturer or authorized distributors?
All PTFB191501FV1R250XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFB191501FV1R250XTMA1 meets industry standards.
7.What is the process for return or replacement of PTFB191501FV1R250XTMA1?
All PTFB191501FV1R250XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with PTFB191501FV1R250XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTFB191501FV1R250XTMA1 part is unused and in its original packaging.
Return procedure for PTFB191501FV1R250XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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