Infineon Technologies PTFB192557SHV1R250XTMA1

Overview

PTFB192557SHV1R250XTMA1 from Infineon is a thermally enhanced 250 W LDMOS RF power transistor optimized as the peak-side device in Doherty cellular base station amplifiers operating at 1930–1990 MHz, with 28 V supply, 18.6 dB gain, and 55% CW efficiency at P1dB. It features internal input/output matching, integrated ESD protection, and is rated for 10:1 VSWR tolerance at full output power.

For engineers reviewing the PTFB192557SHV1R250XTMA1 datasheet, PTFB192557SHV1R250XTMA1 pinout, PTFB192557SHV1R250XTMA1 application, or PTFB192557SHV1R250XTMA1 equivalent, key selection criteria include Doherty peak-stage linearity (ACPR –33.5 dBc), thermal resistance (0.232 °C/W), gate threshold voltage (2.3–3.3 V), and ceramic open-cavity package compatibility with high-power RF PCB layouts.

Technical Context

This LDMOS FET is engineered for asymmetric Doherty architectures where precise gain/phase alignment between carrier and peak transistors is critical. Its internal matching targets 2.03–2.24 Ω source impedance and 2.18–2.46 Ω load impedance across 1930–1990 MHz, enabling broadband WCDMA operation without external tuning networks.

DC biasing is stabilized at IDQ = 1.35 A with VGS = 2.3–3.3 V under 28 V drain supply; thermal performance is enabled by low RθJC (0.232 °C/W) and junction temperature rating up to 200 °C, supporting continuous-wave and pulsed high-PAR signal handling.

Key Specifications

Pinout & Package

PTFB192557SHV1R250XTMA1 is housed in the H-34275G-6/2 ceramic open-cavity package with formed leads and earless configuration, optimized for high-frequency thermal and RF grounding via bottom-side metal slug.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFB192557SHV1R250XTMA1, the XTMA2 variant offers packaging scalability without electrical trade-offs, while XTMA3 improves gate reliability for mission-critical uptime-neither alters RF performance or thermal design margins.

Availability

PTFB192557SHV1R250XTMA1 is available at Aetrix Electronics and suitable for macro-cell base station PA, 5G mMIMO active antenna units, and private LTE infrastructure requiring stable component supply and traceable lot-level documentation.

Supply support for PTFB192557SHV1R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-voltage and high-frequency silicon solutions.

This part belongs to Infineon's LDMOS RF Power Transistor product line, designed specifically for cellular infrastructure amplifiers demanding high efficiency, ruggedness, and broadband linearity in 600 MHz–3.8 GHz bands.

FAQ

What is the recommended gate bias network for PTFB192557SHV1R250XTMA1 in Doherty configurations?

A two-resistor divider (R1 = 10 kΩ, R2 = 2.2 kΩ) with bypass capacitor (100 nF X7R) is specified to deliver 2.8 V nominal VGS at IDQ = 1.35 A. Gate current is limited to <1 µA, so no active regulation is required; layout must minimize inductance in the gate return path to the source slug.

Can PTFB192557SHV1R250XTMA1 operate reliably at 3.5 GHz for 5G NR applications?

No-its optimized matching and gain profile are validated only from 1930–1990 MHz. At 3.5 GHz, gain drops below 12 dB and efficiency falls below 35%, violating 5G NR ACLR and EVM specifications; Infineon's PTVA122557SH is the designated 3.4–3.8 GHz counterpart.

Is the H-34275G-6/2 package compatible with standard reflow soldering profiles?

Yes-the ceramic open-cavity package supports lead-free reflow per IPC-J-STD-020 Rev E, with peak temperature ≤260 °C for ≤30 seconds. Critical constraint is maintaining thermal gradient <2 °C/s during ramp-up to avoid die attach voiding; board layout must provide ≥6 mm copper pour under the slug.

Does this device require external ESD protection on the gate terminal?

No-integrated Class 1C HBM ESD protection (≥1000 V) is built into the gate structure per JESD22-A114. External TVS diodes are unnecessary and may degrade RF performance; however, handling precautions (wrist strap, grounded workstation) remain mandatory during assembly.