Infineon Technologies PTFB192557SHV1XWSA1

Overview

PTFB192557SHV1XWSA1 from Infineon Technologies is a thermally enhanced 255 W LDMOS RF power transistor optimized as the peak-side device in Doherty cellular base station amplifiers operating at 1930–1990 MHz under 28 V DC bias. It delivers 250 W P1dB output power, 18.6 dB gain, and 55% drain efficiency in CW pulsed mode at 1990 MHz, with integrated ESD protection and 10:1 VSWR ruggedness.

For engineers reviewing the PTFB192557SHV1XWSA1 datasheet, PTFB192557SHV1XWSA1 pinout, PTFB192557SHV1XWSA1 application, or PTFB192557SHV1XWSA1 equivalent, key selection criteria include Doherty peak-stage matching, thermal resistance (0.232 °C/W), gate threshold voltage (2.3–3.3 V), broadband WCDMA linearity (–33.5 dBc ACPR), and ceramic open-cavity H-34288G-4/2 package compatibility.

Technical Context

This LDMOS FET employs Infineon's high-voltage silicon process to support 65 V V_DSS and operate reliably at junction temperatures up to 200 °C. Its internal input/output matching networks are tuned specifically for asymmetrical Doherty configurations, enabling high-efficiency operation at 28 V with 1.35 A quiescent drain current.

The device targets 3GPP-compliant WCDMA signals with 3.84 MHz bandwidth and 8:1–10:1 PAR, delivering –33.5 dBc ACPR at 60 W average output and maintaining <–40 dBc IMD3 across 1930–1990 MHz. Thermal design leverages low R_θJC and ceramic packaging for high-power RF amplifier stages requiring stable gain and efficiency over temperature.

Key Specifications

Pinout & Package

Package: H-34288G-4/2 - ceramic open-cavity, formed leads, earless, RoHS-compliant. Not recommended for new designs per Infineon documentation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFB192557SHV1XWSA1, the XTMA1 variant offers identical RF performance with SMT-ready packaging, while the XWSA2 requires mechanical redesign but may improve yield in high-volume production - neither is a drop-in replacement without validation.

Availability

PTFB192557SHV1XWSA1 is available at Aetrix Electronics and suitable for macro-cell base station power amplifiers, remote radio heads, multi-carrier WCDMA transmitters, and ruggedized outdoor RF infrastructure requiring stable component supply and long-term lifecycle support.

Supply support for PTFB192557SHV1XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global manufacturing and R&D centers.

This part belongs to Infineon's high-power LDMOS RF transistor product line, engineered for cellular infrastructure applications demanding high efficiency, linearity, and thermal resilience in 3G/4G base station amplifiers.

FAQ

Is PTFB192557SHV1XWSA1 suitable for 5G NR applications?

No - this device is characterized and qualified for 3GPP WCDMA and LTE FDD bands up to 2150 MHz. While it operates at 1990 MHz, its linearity, ACPR, and IMD performance are validated only for 3.84 MHz and 20 MHz channel bandwidths, not the wider 100 MHz channels or higher-order modulation used in 5G NR. Use Infineon's newer Gen9 LDMOS or GaN devices for 5G deployment.

What is the maximum safe operating drain voltage for continuous operation?

The absolute maximum drain-source voltage is 65 V, but safe continuous operation requires adherence to the SOA curve: at 28 V DC supply and 250 W RF output, junction temperature must remain ≤200 °C. With R_θJC = 0.232 °C/W and T_CASE ≤70 °C, sustained 250 W CW is permissible only with adequate heatsinking and airflow - exceeding 28 V risks thermal runaway even below 65 V.

Does this device require external gate resistors for stability?

Yes - although internally matched, the datasheet reference circuit includes gate-stabilizing resistors (R101/R102 = 10 Ω) and a gate bias potentiometer (S1 = 2 kΩ) to suppress low-frequency oscillation and ensure broadband stability. Omitting these increases risk of parasitic oscillation above 1 GHz, especially under high-VSWR conditions.

Why is H-34288G-4/2 "not recommended for new design"?

Infineon discontinued support for H-34288G-4/2 in favor of H-34275G-6/2 (used in XTMA1/XWSA2 variants) due to improved manufacturability, tighter lead coplanarity, and better thermal interface consistency. New designs should use the newer package to ensure long-term supply, updated test fixtures, and access to latest characterization data - though XWSA1 remains available for legacy repair and qualification continuity.