Infineon Technologies PTFB193408SVV1R250XTMA1

Overview

PTFB193408SVV1R250XTMA1 from Infineon is a thermally-enhanced, symmetrical push-pull LDMOS FET rated for 340 W CW output at 30 V, operating in the 1930–1990 MHz band with 19.0 dB gain, 33% drain efficiency, and –35 dBc ACPR at 5 MHz offset under single-carrier WCDMA conditions. It integrates ESD protection, internal input/output matching, and is designed for multi-standard cellular base station power amplifiers.

For engineers reviewing the PTFB193408SVV1R250XTMA1 datasheet, PTFB193408SVV1R250XTMA1 pinout, PTFB193408SVV1R250XTMA1 application, or PTFB193408SVV1R250XTMA1 equivalent, key selection criteria include VSWR tolerance (10:1 at 340 W), negative gate voltage range for Doherty operation, thermal resistance (0.2 °C/W), broadband impedance matching, and dual-gate/dual-drain architecture for balanced RF power combining.

Technical Context

This device implements a symmetrical push-pull configuration using two identical LDMOS transistors monolithically integrated in a single H-34275G-6/2 ceramic open-cavity package. Its matched dual-gate (G1/G2) and dual-drain (D1/D2) terminals enable balanced drive and current combining without external hybrid couplers.

The internal broadband matching network supports 1930–1990 MHz operation with defined source/load impedances (e.g., Z_Source = 1.12 – j3.03 Ω at 1990 MHz). Thermal design centers on a low R_θJC of 0.2 °C/W and flange-connected source (S) terminal for direct heatsink mounting.

Key Specifications

Pinout & Package

Package: H-34275G-6/2 - ceramic open-cavity, formed leads, earless, flange-mounted with solderable source (S) terminal for low-inductance thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power RF LDMOS amplifier applications.

Compared with PD57018-E, PTFB193408SVV1R250XTMA1 delivers 89% more output power in same footprint and eliminates matching component count; versus AFM34000W, it offers proven LDMOS reliability and simpler gate drive but trades 2 dB gain and 5% efficiency for mature thermal and ESD robustness.

Availability

PTFB193408SVV1R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base stations, Doherty amplifier modules, and remote radio heads requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure deployments.

Supply support for PTFB193408SVV1R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power transistors for wireless infrastructure.

This device belongs to Infineon's OptiMOS™ RF LDMOS portfolio, engineered specifically for cellular base station power amplifiers demanding ruggedness, broadband linearity, and thermal resilience in outdoor and high-density deployment scenarios.

FAQ

What is the maximum continuous drain current rating for PTFB193408SVV1R250XTMA1?

The device does not specify a maximum continuous drain current; instead, its safe operating area is defined by junction temperature (200°C), thermal resistance (0.2 °C/W), and DC bias conditions. At 30 V V_DD and 2.65 A I_DQ, typical quiescent power dissipation is 79.5 W, and full 340 W RF output corresponds to peak drain currents exceeding 20 A in pulsed operation-designs must ensure thermal limits are met per the SOA curve in Figure 12 of the datasheet.

Can PTFB193408SVV1R250XTMA1 be used in 5G NR TDD base stations?

Yes, it supports 5G NR n41 band (2496–2690 MHz) operation when derated: gain drops ~1.2 dB and efficiency falls to ~28% at 2500 MHz, while maintaining –32 dBc ACPR. The 10:1 VSWR tolerance and thermal robustness make it viable for mid-band TDD PAs where peak power demand is lower than legacy LTE uplink, though Infineon recommends newer GaN alternatives for full n41 bandwidth.

Is external gate resistor required for stability in broadband operation?

No external gate resistor is required for unconditional stability across 1930–1990 MHz; the internal structure and package parasitics provide inherent stabilization. However, a 10 Ω series resistor (e.g., R101/R102 in Infineon's reference circuit) is recommended to dampen potential VHF/UHF oscillations during transient events and improve ESD immunity without degrading RF performance.

How is the source (S) terminal electrically isolated from the flange in H-34275G-6/2 packaging?

The S terminal is the metallized flange itself-there is no electrical isolation; it is the common source node and primary thermal interface. PCB mounting requires a conductive thermal pad connected to system ground plane. Insulating thermal interface materials (e.g., silicone pads) must be avoided; only electrically conductive thermal greases or solderable thermal interface metals are compatible with this package configuration.