Infineon Technologies PTFB193408SVV1XWSA1

Overview

PTFB193408SVV1XWSA1 from Infineon is a thermally-enhanced, symmetrical push-pull LDMOS FET rated for 340 W CW output at 30 V, operating in the 1930–1990 MHz band. It integrates input/output broadband matching, delivers 19.0 dB gain and 33% drain efficiency under single-carrier WCDMA conditions (1990 MHz, PAR = 7.5 dB), and features integrated ESD protection and 10:1 VSWR ruggedness-designed for macro base station power amplifiers.

For engineers reviewing the PTFB193408SVV1XWSA1 datasheet, PTFB193408SVV1XWSA1 pinout, PTFB193408SVV1XWSA1 application, or PTFB193408SVV1XWSA1 equivalent, key selection criteria include RF power handling at 30 V, thermal resistance of 0.2 °C/W, symmetrical dual-gate/dual-drain topology, and verified two-carrier WCDMA IMD performance of –33 dBc.

Technical Context

This device implements a symmetrical push-pull configuration with two identical LDMOS die in a single H-34275G-6/2 ceramic open-cavity package, enabling balanced drive and inherent even-order distortion cancellation. Its internal broadband matching covers 1930–1990 MHz without external tuning, and the –6 to +10 V gate voltage range supports Doherty amplifier bias flexibility.

DC characteristics include 65 V drain-source breakdown, 0.05 Ω on-state resistance, and 2.3–3.3 V gate threshold at 2.6 A quiescent current. Thermal design is anchored by a flange-connected source terminal and 0.2 °C/W junction-to-case resistance at 300 W CW, enabling high-power operation at TCASE = 70°C.

Key Specifications

Pinout & Package

Package: H-34275G-6/2 - ceramic open-cavity, formed leads, earless, flange-mounted with solderable source (S) for low-inductance thermal and RF grounding.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power RF LDMOS amplifier applications.

Compared with PD57018-E and RF3923, PTFB193408SVV1XWSA1 uniquely combines symmetrical push-pull architecture, integrated broadband matching, and 10:1 VSWR tolerance-making it the only option qualified for unfiltered macro base station final stages in Band 2/25 without external protection circuitry.

Availability

PTFB193408SVV1XWSA1 is available at Aetrix Electronics and suitable for macro base station power amplifiers, LTE small cell transmitters, Doherty amplifier main paths, and WCDMA/HSPA+ infrastructure requiring stable component supply across extended production lifecycles.

Supply support for PTFB193408SVV1XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power solutions for wireless infrastructure.

This part belongs to Infineon's PTFB series of thermally enhanced LDMOS FETs, engineered specifically for high-efficiency, high-reliability macro base station power amplifiers operating in licensed cellular bands.

FAQ

What is the maximum safe operating temperature for PTFB193408SVV1XWSA1?

The absolute maximum junction temperature is 200 °C, and the device is characterized for continuous operation at TCASE = 70 °C with 300 W CW output. Derating is required above 70 °C case temperature per the RθJC = 0.2 °C/W specification; sustained operation above 175 °C junction temperature risks accelerated degradation.

Does PTFB193408SVV1XWSA1 require external gate resistors for stability?

No external gate stopper resistors are required-the device is unconditionally stable up to 3 GHz when used with the recommended reference circuit (LTN/PTFB193408SV). Stability is ensured by internal layout symmetry and optimized gate metallization; adding external resistors may degrade gain and efficiency.

Can this device be used in GaN-replacement designs?

It is not a drop-in GaN replacement: PTFB193408SVV1XWSA1 operates at 30 V with 340 W CW, while typical GaN alternatives (e.g., CGHV1F025D) run at 50 V and offer higher gain but require different bias sequencing and thermal interface design. Direct substitution would necessitate full requalification.

Is the H-34275G-6/2 package RoHS-compliant and lead-free?

Yes-the H-34275G-6/2 package is RoHS-compliant and uses lead-free terminations with gold plating ≤0.25 µm thick. The ceramic body and internal metallization meet JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) and pass IPC/JEDEC standard reflow profiles.