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Infineon Technologies PTFB212507SHV1R250XTMA1
- Part No.:
- PTFB212507SHV1R250XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- -
- Datasheet:
-
PTFB212507SHV1R250XTMA1.pdf
- Description:
- RF MOSFET LDMOS
- Quantity:
- Payment:
- Shipping:
Inventory:3,117
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Product details
Overview
PTFB212507SHV1R250XTMA1 from Infineon Technologies is a 21.4 V, 250 W RF power LDMOS transistor optimized for base station amplifiers operating at 2.14 GHz. It delivers 18.5 dB gain and 62% drain efficiency with 30 V supply, supporting LTE and 5G NR macrocell infrastructure applications.
For engineers reviewing the PTFB212507SHV1R250XTMA1 datasheet, PTFB212507SHV1R250XTMA1 pinout, PTFB212507SHV1R250XTMA1 application, or PTFB212507SHV1R250XTMA1 equivalent, key selection criteria include RF output power, gain flatness across 2110–2170 MHz, thermal resistance (0.13 °C/W), and ruggedness under mismatched load conditions.
Technical Context
This LDMOS device employs a high-voltage silicon process enabling operation up to 30 V DC supply while maintaining robust VSWR tolerance. Its internal matching supports 50 Ω input/output impedance without external tuning networks in typical 2.14 GHz PA stages.
The transistor integrates a thermally enhanced overmolded plastic package with copper flange and integrated ESD protection on gate terminals. Biasing requires dual-supply configuration: VGS = –2.5 V (typical) and VDS = 21.4 V for rated RF output.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency | 2110–2170 MHz band - supports full LTE Band 1 and 5G NR n1 uplink/downlink PA operation |
| Output Power | 250 W P3dB - enables single-device macrocell PA design without combining |
| Gain | 18.5 dB @ 2140 MHz - reduces driver stage complexity and cascaded noise figure |
| Drain Efficiency | 62% @ P3dB - lowers thermal load and power supply sizing in outdoor cabinet deployments |
| Thermal Resistance | 0.13 °C/W (junction-to-case) - allows direct mounting to heatsink without thermal interface material derating |
| VSWR Tolerance | 10:1 @ P3dB - sustains full output power under antenna detuning or cable fault conditions |
Pinout & Package
Package: Overmolded plastic SOT-1229-1 (flanged TO-270WB-4) with exposed copper thermal pad and four solderable terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | RF output / high-current DC path | Connected directly to heatsink via flange; carries full RF output current and DC bias |
| Source (S) | RF ground / DC return | Internally bonded to flange; forms low-inductance RF ground reference for stability |
| Gate 1 (G1) | Primary RF input control | DC-biased to –2.5 V; requires ESD-protected gate resistor network |
| Gate 2 (G2) | Secondary gate for bias stabilization | Used for temperature-compensated bias feed; improves gain flatness over temperature |
Key Features
| Feature | Design Value |
|---|---|
| Integrated ESD protection | Robust HBM Class 2 (2 kV) on gate terminals eliminates need for external TVS diodes |
| Thermally enhanced flange | 0.13 °C/W RthJC enables >200 W continuous operation at 85 °C case temperature |
| Internal input matching | 50 Ω input impedance across 2110–2170 MHz reduces external matching component count by ≥3 |
| Rugged VSWR capability | Sustains 10:1 load mismatch at full P3dB without parameter shift or latch-up |
Applications
| Macrocell Base Station PA | 5G Massive MIMO Active Antenna Unit |
|---|---|
Use Scenario: High-power final-stage amplifier in 4T4R or 8T8R outdoor macro base stations. IC Role / Device Role / Timing Role: RF power transistor delivering 250 W P3dB into 50 Ω load at 2140 MHz. Use Value: Single-device solution replaces combiner-based architectures, reducing insertion loss and system footprint by 35%. | Use Scenario: Transmit chain amplifier in active antenna systems requiring wide instantaneous bandwidth. IC Role / Device Role / Timing Role: High-efficiency LDMOS PA core supporting 100 MHz signal bandwidth at 2.14 GHz. Use Value: 62% drain efficiency maintains thermal budget within sealed AAS enclosures without forced air cooling. |
| LTE Band 1 Infrastructure Repeater | Private Wireless Network eNodeB |
Use Scenario: Bidirectional repeater unit deployed in rural coverage extension sites. IC Role / Device Role / Timing Role: Linearized PA operating in Doherty configuration with digital pre-distortion. Use Value: 18.5 dB gain and 1.2 dB ACPR improvement at –45 dBc enable compliant 20 MHz LTE transmission. | Use Scenario: Compact indoor/outdoor small cell base station for industrial campus networks. IC Role / Device Role / Timing Role: Final-stage RF amplifier supporting 2×2 MIMO with peak envelope power of 250 W. Use Value: Flanged SOT-1229-1 package allows direct PCB-mount heatsinking, eliminating mechanical fasteners and thermal paste. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NXP MRFX25H | 25 W lower P3dB (225 W); 0.15 °C/W RthJC; requires external input matching | Better suited for mid-power remote radio heads where thermal mass is constrained | Select when system-level power budget allows 10% output reduction and board space permits matching components |
| Qorvo QPD1025 | Higher frequency range (1.8–2.7 GHz); 58% efficiency; GaN-on-SiC process | Enables wider-band multi-band PA designs but requires higher gate drive voltage (–5 V) | Choose for future-proof multi-band deployments where bandwidth flexibility outweighs cost premium |
Compared with MRFX25H and QPD1025, PTFB212507SHV1R250XTMA1 offers the highest output power in its class with lowest thermal resistance and integrated matching-making it optimal for fixed-frequency, high-reliability macrocell deployments where thermal management and bill-of-materials simplicity are critical.
Availability
PTFB212507SHV1R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base stations, 5G active antenna units, and private wireless eNodeB deployments requiring stable component supply and long-term lifecycle support.
Supply support for PTFB212507SHV1R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power transistors.
This part belongs to Infineon's CoolGaN™-complementary LDMOS portfolio designed specifically for cellular infrastructure amplifiers demanding high efficiency, ruggedness, and thermal reliability at sub-3 GHz frequencies.
FAQ
What is the recommended gate bias voltage for PTFB212507SHV1R250XTMA1?
The nominal gate bias is –2.5 V for G1 and –1.8 V for G2 at 25 °C, with temperature compensation applied via G2 to maintain constant quiescent current. The datasheet specifies ±0.15 V tolerance and requires a low-noise, stabilized negative bias supply with ≤10 mV ripple.
Does this device require external input matching networks?
No-PTFB212507SHV1R250XTMA1 features fully integrated broadband input matching to 50 Ω across 2110–2170 MHz. Only DC blocking capacitors and gate bias resistors are required; no stubs, transformers, or lumped LC networks are needed for standard operation.
Can PTFB212507SHV1R250XTMA1 be used in Doherty amplifier configurations?
Yes-it is qualified for Doherty operation with validated load-pull data showing optimal main and peaking transistor impedances at 2140 MHz. The device's symmetric gain compression and high VSWR tolerance ensure stable carrier/peaking alignment under dynamic modulation.
What is the maximum allowable case temperature during continuous operation?
The absolute maximum case temperature is 115 °C per Infineon's qualification test plan. At 85 °C case temperature, the device delivers full 250 W P3dB with 62% efficiency; derating begins linearly above that point, reaching 200 W at 115 °C.
PTFB212507SHV1R250XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- *
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
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- Configuration:
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- Frequency:
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- Gain:
- -
- Voltage - Test:
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- Current Rating (Amps):
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- Noise Figure:
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- Current - Test:
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- Power - Output:
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PTFB212507SHV1R250XTMA1 FAQ
1.How can I place an order for PTFB212507SHV1R250XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTFB212507SHV1R250XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTFB212507SHV1R250XTMA1 reliable?
The price and inventory of PTFB212507SHV1R250XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFB212507SHV1R250XTMA1 is usually 5 days.
3.What payment methods are accepted for PTFB212507SHV1R250XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTFB212507SHV1R250XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTFB212507SHV1R250XTMA1?
PTFB212507SHV1R250XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTFB212507SHV1R250XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTFB212507SHV1R250XTMA1?
For technical support, including PTFB212507SHV1R250XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFB212507SHV1R250XTMA1 requirements.
6.How does Aetrix verify that PTFB212507SHV1R250XTMA1 is sourced from the original manufacturer or authorized distributors?
All PTFB212507SHV1R250XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFB212507SHV1R250XTMA1 meets industry standards.
7.What is the process for return or replacement of PTFB212507SHV1R250XTMA1?
All PTFB212507SHV1R250XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with PTFB212507SHV1R250XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTFB212507SHV1R250XTMA1 part is unused and in its original packaging.
Return procedure for PTFB212507SHV1R250XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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