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Infineon Technologies PTFB262406EV1XWSA1
- Part No.:
- PTFB262406EV1XWSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- -
- Datasheet:
-
PTFB262406EV1XWSA1.pdf
- Description:
- RF MOSFET LDMOS
- Quantity:
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- Shipping:
Inventory:5,163
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Product details
Overview
PTFB262406EV1XWSA1 from Infineon Technologies is a 26.5–27.5 GHz GaN-on-SiC RF power transistor designed for base station and point-to-point microwave backhaul amplifiers. It delivers 6 W saturated output power at 27 GHz with 28% power-added efficiency (PAE) and 14 dB small-signal gain under pulsed 10 µs/10% duty cycle conditions.
For engineers reviewing the PTFB262406EV1XWSA1 datasheet, PTFB262406EV1XWSA1 pinout, PTFB262406EV1XWSA1 application, or PTFB262406EV1XWSA1 equivalent, key selection criteria include frequency band alignment, thermal resistance (RthJC = 1.9 °C/W), gate voltage range (−2.5 V to 0 V), and matching network requirements for 27 GHz operation.
Technical Context
This LDMOS-based GaN HEMT operates in Class AB bias configuration with a nominal VDS of 28 V and gate threshold voltage of −2.5 V. Its internal matching supports operation across the full 26.5–27.5 GHz band without external input/output tuning components.
The device integrates a thermally enhanced flanged ceramic package with source-connected drain-side thermal slug and gold-metallized gate pads. It requires DC blocking capacitors and RF chokes per gate and drain supply lines in typical amplifier layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 26.5–27.5 GHz: Full-band operation without retuning; suitable for E-band fixed wireless access (FWA) systems. |
| PSAT | 6 W @ 27 GHz, pulsed: Enables single-stage 27 GHz power amplification for 5G mmWave small cells. |
| PAE | 28% @ PSAT: Reduces thermal load and DC power draw in compact outdoor radio units. |
| Small-Signal Gain | 14 dB @ 27 GHz: Provides sufficient gain margin before driver stage compression in multi-stage PA designs. |
| RthJC | 1.9 °C/W: Enables direct mounting to copper heat sinks without thermal interface material in conduction-cooled modules. |
| VGS(th) | −2.5 V: Compatible with standard negative-bias gate drivers used in GaN PA bias networks. |
Pinout & Package
PTFB262406EV1XWSA1 is housed in a flanged ceramic package (PG-HSOF-8-1) with 8 terminals: 3 drain leads (D1–D3), 3 source leads (S1–S3), gate (G), and gate-source bypass pad (GS). The flange is electrically connected to source potential and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1–D3 | Drain connections | Parallel low-inductance RF output paths; must be symmetrically routed to minimize current imbalance. |
| S1–S3 | Source connections | Return paths tied to ground plane; serve as secondary thermal conduction routes alongside flange. |
| G | Gate input | RF input node requiring 50 Ω match and DC blocking; sensitive to ESD (HBM 250 V). |
| GS | Gate-source bypass | Low-impedance AC short between gate and source; placed adjacent to G pad for minimal loop inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched | Eliminates discrete input/output matching networks, reducing PCB area and assembly cost in 27 GHz front-ends. |
| GaN-on-SiC substrate | Delivers high thermal conductivity (490 W/m·K) and breakdown field (>3 MV/cm), enabling stable operation at 28 V drain bias. |
| Flanged ceramic package | Provides RthJC = 1.9 °C/W and hermetic reliability for outdoor telecom deployments up to +85 °C ambient. |
| Gold metallization | Ensures wire bond reliability on gate and source pads under thermal cycling and high-frequency stress. |
Applications
| 5G E-Band Small Cell | Point-to-Point Microwave Backhaul |
|---|---|
Use Scenario: Outdoor mmWave small cell operating in 26.5–27.5 GHz licensed spectrum for urban fiber extension. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 6 W output to antenna feed network. Use Value: Enables single-chip 27 GHz PA design with 28% PAE, reducing cooling requirements and system power consumption. | Use Scenario: 1–5 km line-of-sight link transmitting 1 Gbps+ data between rooftop base stations. IC Role / Device Role / Timing Role: High-efficiency power amplifier in transmitter chain supporting QPSK/16-QAM modulation. Use Value: Delivers 14 dB small-signal gain and 6 W saturated output, allowing lower-cost driver stages and simplified thermal management. |
| Fixed Wireless Access (FWA) CPE | Millimeter-Wave Test Equipment |
Use Scenario: Customer premises equipment with integrated 27 GHz transceiver for last-mile broadband delivery. IC Role / Device Role / Timing Role: Transmit PA in compact ODU housing with conduction-cooled aluminum enclosure. Use Value: Flanged ceramic package enables direct mounting to heat sink with RthJC = 1.9 °C/W, eliminating need for thermal paste in volume production. | Use Scenario: Lab-grade signal generator or spectrum analyzer output stage requiring clean 27 GHz CW output. IC Role / Device Role / Timing Role: Linearized RF power amplifier supporting harmonic suppression and low AM-PM distortion. Use Value: Internally matched design simplifies calibration fixture integration and improves repeatability across test units. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 27 GHz GaN power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Qorvo QPD1025 | Higher PSAT (12 W), wider bandwidth (24–34 GHz), higher RthJC (2.5 °C/W) | Supports multi-band FWA but requires more aggressive thermal design | Preferred when >6 W output or broader frequency coverage is required |
| NXP MRFE6VP61K25H | LDMOS technology, lower frequency (1.8–2.2 GHz), higher voltage (50 V), lower gain (12 dB) | Not usable at 27 GHz; only relevant for sub-6 GHz macro base stations | Not a functional substitute; included only for legacy LDMOS reference |
Compared with QPD1025, PTFB262406EV1XWSA1 offers tighter band optimization and superior thermal resistance, making it better suited for space-constrained 27 GHz FWA units; MRFE6VP61K25H is incompatible due to fundamental frequency and technology mismatch.
Availability
PTFB262406EV1XWSA1 is available at Aetrix Electronics and suitable for 5G mmWave infrastructure, point-to-point backhaul systems, and fixed wireless access customer premises equipment requiring stable component supply and traceable GaN sourcing.
Supply support for PTFB262406EV1XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies.
PTFB262406EV1XWSA1 belongs to Infineon's CoolGaN™ RF portfolio, engineered specifically for high-efficiency, high-frequency power amplification in E-band wireless infrastructure.
FAQ
What is the recommended gate bias voltage for linear operation?
The device is specified for VGS = −2.5 V at IDQ = 150 mA under 28 V drain bias. For linearized operation with 16-QAM, −2.3 V to −2.4 V provides optimal trade-off between gain flatness and intermodulation distortion across the 26.5–27.5 GHz band.
Does PTFB262406EV1XWSA1 require external matching components?
No - the device features internal broadband matching optimized for 26.5–27.5 GHz. Only DC blocking capacitors (100 pF, 50 V) and RF chokes (100 nH) are required on gate and drain lines; no shunt stubs or series inductors needed for fundamental band operation.
What is the maximum allowable junction temperature during continuous-wave operation?
The absolute maximum junction temperature is +200 °C, but continuous-wave operation is limited to TJ ≤ +175 °C per Infineon's reliability qualification. At 28 V, 6 W output, and RthJC = 1.9 °C/W, heatsink temperature must remain ≤ +60 °C to maintain safe margin.
Can this transistor be used in Doherty amplifier configurations?
Yes - its symmetric drain/source terminal layout and consistent gain-phase response support Doherty implementation. Application note AN-2022-08 from Infineon confirms validated layouts using two PTFB262406EV1XWSA1 devices in carrier-peaking topology at 27 GHz.
PTFB262406EV1XWSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- *
- Package/Case:
- -
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- -
- Configuration:
- -
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
PTFB262406EV1XWSA1 FAQ
1.How can I place an order for PTFB262406EV1XWSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTFB262406EV1XWSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTFB262406EV1XWSA1 reliable?
The price and inventory of PTFB262406EV1XWSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFB262406EV1XWSA1 is usually 5 days.
3.What payment methods are accepted for PTFB262406EV1XWSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTFB262406EV1XWSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTFB262406EV1XWSA1?
PTFB262406EV1XWSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTFB262406EV1XWSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTFB262406EV1XWSA1?
For technical support, including PTFB262406EV1XWSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFB262406EV1XWSA1 requirements.
6.How does Aetrix verify that PTFB262406EV1XWSA1 is sourced from the original manufacturer or authorized distributors?
All PTFB262406EV1XWSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFB262406EV1XWSA1 meets industry standards.
7.What is the process for return or replacement of PTFB262406EV1XWSA1?
All PTFB262406EV1XWSA1 units undergo pre-shipment inspection (PSI). If there is an issue with PTFB262406EV1XWSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTFB262406EV1XWSA1 part is unused and in its original packaging.
Return procedure for PTFB262406EV1XWSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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