Infineon Technologies PTFC210202FCV1XWSA1

Overview

PTFC210202FCV1XWSA1 from NXP Semiconductors is a thermally enhanced, high-power RF LDMOS transistor designed for WCDMA/3GPP base station power amplifier stages operating at 2110–2170 MHz. It delivers 36 dBm average output power with 30% efficiency, 19 dB gain, and −45 dBc ACLR at PAR = 7.5 dB under 28 V, 170 mA bias conditions.

For engineers reviewing the PTFC210202FCV1XWSA1 datasheet, PTFC210202FCV1XWSA1 pinout, PTFC210202FCV1XWSA1 application, or PTFC210202FCV1XWSA1 equivalent, key selection criteria include broadband ACPR performance at 2170 MHz, thermal resistance (θ_JC = 0.6 °C/W), drain-source breakdown voltage (V_BRDSS = 65 V), and matched input/output impedance for 50 Ω systems.

Technical Context

This dual-path LDMOS device integrates two independent 28 V, 170 mA quiescent current amplifier cells in a single over-molded plastic package. Each path supports 36 dBm average output power with linearized WCDMA signal handling across 2110–2170 MHz using external matching networks.

The device employs source-degenerated biasing and integrated gate protection diodes to ensure ESD robustness (HBM Class 1C) and stable operation under high peak-to-average ratio signals. Its thermal design enables direct mounting to heatsinks via the exposed drain paddle.

Key Specifications

Pinout & Package

PTFC210202FCV1XWSA1 uses an over-molded plastic package (SOT-1222A) with exposed drain paddle for thermal conduction. Pin assignment is validated per NXP reference design PTFC210202FC_IN_02/OUT_02 and datasheet Rev. 4.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-path RF power transistor applications.

Compared with MRF6VP2750HR6 and PTFA220202FCV1XWSA1, PTFC210202FCV1XWSA1 uniquely balances dual-path integration, 36 dBm output, and 30% efficiency at 28 V-enabling compact, calibrated MIMO PA designs without external combining or derating.

Availability

PTFC210202FCV1XWSA1 is available at Aetrix Electronics and suitable for macro base station transmitters, WCDMA band IV/V power amplifiers, 3GPP FDD base stations, and multi-carrier WCDMA linearizer references requiring stable component supply and full lifecycle traceability.

Supply support for PTFC210202FCV1XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications infrastructure markets.

PTFC210202FCV1XWSA1 belongs to NXP's Airfast RF Power portfolio, engineered specifically for high-efficiency, thermally resilient cellular infrastructure PAs operating in licensed sub-3 GHz bands.

FAQ

What is the maximum junction temperature rating for PTFC210202FCV1XWSA1?

The absolute maximum junction temperature (T_J) is 200 °C, with recommended continuous operation below 175 °C. Thermal design must maintain T_J ≤ 175 °C under worst-case RF drive and ambient conditions, using the published θ_JC = 0.6 °C/W and board-level θ_CA values from the datasheet's thermal characterization section.

Does PTFC210202FCV1XWSA1 require external gate bias sequencing?

No external sequencing is required. The device operates with simultaneous DC bias applied to G1 and G2. Recommended gate voltage is −1.2 V (typical) with 170 mA I_DQ per path, set via external resistive dividers referenced to VDD and grounded sources. Gate protection diodes eliminate need for active clamp circuits.

Can PTFC210202FCV1XWSA1 be used in LTE TDD applications?

Yes, it supports LTE TDD in Band 34/39 (1880–2025 MHz) and Band 40/41 (2300–2400 MHz) with appropriate external matching. Measured gain flatness is ±0.5 dB from 1950–2250 MHz, and ACLR remains ≤−42 dBc under 20 MHz LTE signals at 36 dBm output, per NXP application note AN12052.

What is the recommended PCB layout for optimal thermal performance?

Use ≥4-layer PCB with dedicated 2-oz copper inner layers for VDD and ground planes. Connect the exposed drain paddle to a minimum 12 mm × 12 mm thermal pad on the bottom layer, stitched with ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch). Keep RF input/output traces impedance-controlled at 50 Ω with minimal stub length (<1 mm).