Infineon Technologies PTVA035002EVV1XWSA1

Overview

PTVA035002EVV1XWSA1 from Infineon Technologies is a thermally-enhanced 500 W RF LDMOS FET optimized for broadband power amplifier stages in the 390–450 MHz band, operating at 50 V drain supply with 15.5 dB typical pulsed gain and 66% drain efficiency at 450 MHz under Class AB conditions.

For engineers reviewing the PTVA035002EVV1XWSA1 datasheet, PTVA035002EVV1XWSA1 pinout, PTVA035002EVV1XWSA1 application, or PTVA035002EVV1XWSA1 equivalent, key selection criteria include thermal resistance (0.20 °C/W), 105 V V(BR)DSS rating, unmatched input/output impedance, 13:1 load mismatch tolerance, and H-36275-4 bolt-down flange package compatibility.

Technical Context

This device implements a single-ended, high-voltage LDMOS structure with integrated ESD protection on gate terminals, fabricated using Infineon's advanced RF process to achieve low R_DS(on) (0.1 Ω typ.) and stable operation up to 200 °C junction temperature. Its unmatched design eliminates external matching networks at both ports for rapid integration into base station PA modules.

The H-36275-4 package features dual drain leads (D1/D2), dual gate terminals (G1/G2), and a common source (S), enabling symmetrical current sharing and reduced parasitic inductance-critical for maintaining gain flatness and efficiency across the 390–450 MHz band under pulsed CW conditions (12 µs, 10% duty cycle).

Key Specifications

Pinout & Package

PTVA035002EVV1XWSA1 uses the H-36275-4 thermally enhanced bolt-down flange package with gold-plated leads and 0.127 mm lead thickness. The package integrates dual drain and dual gate terminals for balanced layout and low-inductance grounding.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power RF transistor applications.

Compared with MRF6VP2600HR5 and PD85008-E, PTVA035002EVV1XWSA1 offers superior thermal performance (0.20 °C/W), verified 13:1 mismatch tolerance, and integrated ESD protection-making it optimal for new 4G/LTE macro-cell and public safety amplifier designs where reliability and board-level simplicity are critical.

Availability

PTVA035002EVV1XWSA1 is available at Aetrix Electronics and suitable for macro-cell base station PA, TDD-LTE transmitter modules, public safety radio amplifiers, and broadband HF/VHF repeaters requiring stable component supply and long-term lifecycle support.

Supply support for PTVA035002EVV1XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and RF solutions, with global manufacturing and R&D centers focused on high-reliability analog and RF components.

This part belongs to Infineon's RF Power LDMOS portfolio, engineered specifically for cellular infrastructure applications demanding high efficiency, ruggedness, and thermal stability in outdoor and mission-critical environments.

FAQ

What is the maximum continuous drain current rating for PTVA035002EVV1XWSA1?

The device does not specify a maximum continuous drain current (I_D) rating; instead, its safe operating area is defined by V_DS ≤ 105 V, P_DISS ≤ 300 W CW at T_CASE = 70 °C, and thermal limit of 200 °C junction temperature. Under 50 V operation, this corresponds to an average I_D ≤ 6 A for continuous conduction, constrained by R_θJC = 0.20 °C/W and heatsink capability.

Can PTVA035002EVV1XWSA1 be operated in Class C mode?

Yes, the device supports Class C operation, as confirmed by its specified pulsed CW performance (12 µs pulse width, 10% duty cycle) and 13:1 load mismatch tolerance. However, gain compression and harmonic content must be characterized externally, since Class C parameters (e.g., efficiency, harmonic power) are not published in the datasheet.

Is the H-36275-4 package compatible with standard FR4 PCBs?

No-the H-36275-4 package requires direct mechanical mounting to a metal heatsink or cold plate via its bolt-down flange; it is not designed for solder reflow onto FR4. The flange must be electrically and thermally connected to system ground, and PCB interconnects use wire bonds or ribbon bonds to the D1/D2/G1/G2/S terminals.

Does PTVA035002EVV1XWSA1 require external gate resistors for stability?

Yes, the datasheet reference circuit includes gate-stabilizing resistors (R101–R104, 5.6 Ω each) in series with G1 and G2. These suppress VHF/UHF oscillations and improve unconditional stability across the 390–450 MHz band, especially under mismatched load conditions.