Infineon Technologies PTVA093002TCV1R250XUMA1

Overview

PTVA093002TCV1R250XUMA1 from Infineon is a thermally-enhanced 300 W RF LDMOS FET for cellular base station power amplifiers, operating at 703–960 MHz with 50 V supply, dual-path Doherty-ready architecture, and integrated ESD protection (HBM Class 2). It delivers 158 W P1dB, 18.2 dB gain, and 52% efficiency at 780 MHz CW.

For engineers reviewing the PTVA093002TCV1R250XUMA1 datasheet, PTVA093002TCV1R250XUMA1 pinout, PTVA093002TCV1R250XUMA1 application, or PTVA093002TCV1R250XUMA1 equivalent, key selection criteria include load mismatch tolerance (10:1 at 50 V), thermal resistance (0.44 °C/W), single-carrier WCDMA ACPR (–34 dBc), and surface-mount H-49248H-4 ceramic open-cavity package compatibility.

Technical Context

This device implements a dual-gate, dual-drain LDMOS structure optimized for asymmetric Doherty amplifier topologies-main and peak paths operate at distinct bias points (IDQ = 400 mA / 75 mA) and supply voltages (50 V / 28 V). Its flat-leads configuration enables precise impedance tuning across 758–803 MHz in production test fixtures.

The transistor supports broadband operation with verified small-signal gain of 21.2 dB and input return loss >15 dB across 700–900 MHz at 50 V, while maintaining drain efficiency ≥71.9% under pulsed Class AB load-pull conditions at 803 MHz.

Key Specifications

Pinout & Package

Package: H-49248H-4 - Thermally-enhanced ceramic open-cavity surface-mount package with formed leads and earless flange; designed for low-inductance source grounding and high-power RF thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6VP2300HR5 and PD85003-E, PTVA093002TCV1R250XUMA1 uniquely balances 300 W output, 703–960 MHz bandwidth, and 0.44 °C/W thermal resistance-making it optimal for cost-sensitive macrocell upgrades requiring minimal board redesign.

Availability

PTVA093002TCV1R250XUMA1 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, multi-band BTS transceivers, and 5G NR sub-6 GHz PA stages requiring stable component supply and long-term lifecycle support.

Supply support for PTVA093002TCV1R250XUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power solutions for wireless infrastructure.

The PTVA series targets cellular base station power amplifiers, engineered specifically for high-efficiency, thermally robust, and Doherty-compatible operation in 4G/5G macro and remote radio head applications.

FAQ

What is the maximum continuous drain current rating for PTVA093002TCV1R250XUMA1?

The device has no explicit maximum continuous drain current rating; instead, its safe operating area is defined by junction temperature (TJ ≤ 200°C), thermal resistance (RθJC = 0.44 °C/W), and case temperature limits. At TCASE = 70°C and 200 W CW, ID(avg) is approximately 4 A per drain terminal under typical Class AB bias (VDS = 50 V, IDQ = 400 mA).

Can PTVA093002TCV1R250XUMA1 be used in Class C mode for peak-path Doherty operation?

Yes - the datasheet provides validated load-pull data for peak-path operation at 28 V, IDQ = 75 mA, achieving 224 W POUT and 77.4% PAE at 803 MHz. The separate G2 and D2 terminals simplify independent gate drive and output matching for Class C biasing.

Does the H-49248H-4 package require solder paste stencil modifications versus standard QFN footprints?

Yes - the H-49248H-4 package uses a ceramic open-cavity construction with formed leads and an exposed flange that must be fully soldered to a large thermal pad. Recommended stencil aperture is 100% open area with 0.15 mm thickness; solder paste volume must ensure void-free flange attachment to meet RθJC specification.

How does the integrated ESD protection affect RF performance at 900 MHz?

The integrated HBM Class 2 ESD diodes are placed outside the RF signal path and do not degrade small-signal gain or return loss. Measured input return loss remains >15 dB across 700–900 MHz, confirming no parasitic impact on matching networks or PA stability.