Infineon Technologies PTVA101K02EVV1XWSA1

Overview

PTVA101K02EVV1XWSA1 from Infineon is a thermally-enhanced high-power RF LDMOS FET designed for Mode S transponder and air traffic control radar power amplifiers operating at 1030 MHz and 1090 MHz. It delivers 900–1090 W pulsed RF output, 17–21 dB gain, ≥62% drain efficiency at 50 V, and withstands 10:1 load mismatch under MODE-S pulse conditions (32 µs ON / 18 µs OFF ×80, LTDF = 6.4%).

For engineers reviewing the PTVA101K02EVV1XWSA1 datasheet, PTVA101K02EVV1XWSA1 pinout, PTVA101K02EVV1XWSA1 application, or PTVA101K02EVV1XWSA1 equivalent, key selection factors include thermal resistance (0.16 °C/W), broadband input matching, integrated ESD protection, and bolt-down H-36275-4 package suitability for high-reliability airborne RF systems.

Technical Context

This dual-gate LDMOS FET operates in Class AB with fixed 50 V drain supply and quiescent current of 150 mA per side. Its RF performance is characterized across three pulse modes-128 µs/10%, 128 µs/1%, and MODE-S-enabling optimized trade-offs between gain (16–20 dB), efficiency (54–65%), and output power (930–1090 W) at both 1030 MHz and 1090 MHz bands.

The device features symmetric dual-drain/dual-gate topology with shared source terminal, low thermal resistance (0.16 °C/W junction-to-case), and robust 10:1 VSWR tolerance across all phase angles under full 1000 W MODE-S stress. Input impedance is broadband-matched to ~2 Ω real + small reactive component at 1030 MHz.

Key Specifications

Pinout & Package

PTVA101K02EVV1XWSA1 uses the H-36275-4 thermally enhanced bolt-down package with gold-plated copper flange and 5-terminal leadframe: two drains (D1, D2), two gates (G1, G2), and one common source (S). The flange is electrically isolated and mechanically grounded via mounting screws.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power RF amplifier applications.

Compared with CGHV10100F and PD85015, PTVA101K02EVV1XWSA1 uniquely combines 10:1 VSWR ruggedness under certified MODE-S timing, 0.16 °C/W thermal resistance, and precise 1030/1090 MHz optimization-making it the only qualified choice for space-constrained, circulator-free Mode S transponder final stages.

Availability

PTVA101K02EVV1XWSA1 is available at Aetrix Electronics and suitable for airborne transponder manufacturing, ground-based ATC radar production, and avionics test equipment development requiring stable component supply and full traceability.

Supply support for PTVA101K02EVV1XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power solutions for aerospace and defense.

PTVA101K02EVV1XWSA1 belongs to Infineon's thermally enhanced LDMOS portfolio, engineered specifically for certified Mode S transponder and secondary surveillance radar applications demanding ruggedness, efficiency, and regulatory compliance.

FAQ

What is the maximum continuous drain current rating for PTVA101K02EVV1XWSA1?

The device does not specify a continuous DC drain current rating because it is designed exclusively for pulsed RF operation. Maximum ratings are defined by thermal limits: junction temperature must not exceed 200°C, and case temperature must remain ≤70°C during 1000 W MODE-S operation, supported by its 0.16 °C/W thermal resistance.

Can PTVA101K02EVV1XWSA1 be operated at 28 V instead of 50 V?

No-this device is optimized for 50 V operation. Data sheet RF performance (gain, efficiency, power) is only specified at V_DD = 50 V. Operating at 28 V would severely degrade output power and efficiency, and is outside the validated design envelope. Infineon does not characterize or guarantee performance below 45 V.

Is the H-36275-4 package electrically isolated?

Yes-the flange is electrically isolated from all internal terminals (D1, D2, G1, G2, S). The source (S) terminal is the sole RF and DC return path. Mounting screws must connect the flange to chassis ground, while the S pin must be separately routed to circuit ground to maintain proper bias and RF return integrity.

Does PTVA101K02EVV1XWSA1 require external gate resistors for stability?

Yes-external gate stopper resistors (typically 10 Ω) are required in series with each gate (G1, G2) to suppress VHF/UHF parasitic oscillations. The reference design (LTN/PTVA101K02EV V1) specifies 10 Ω resistors (R101, R104, R801, R807) placed adjacent to the gate pads, confirmed necessary for unconditional stability across the 960–1215 MHz band.