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Infineon Technologies PTVA104501EHV1XWSA1
- Part No.:
- PTVA104501EHV1XWSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- H-33288-2
- Datasheet:
-
PTVA104501EHV1XWSA1.pdf
- Description:
- RF MOSFET LDMOS H-33288-2
- Quantity:
- Payment:
- Shipping:
Inventory:7,726
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Product details
Overview
PTVA104501EHV1XWSA1 from NXP Semiconductors is a thermally enhanced 450 W peak pulsed RF LDMOS power transistor designed for base station transmitters operating from 960–1215 MHz. It delivers 22 dB gain, 65% drain efficiency at 450 W peak output (128 µs pulse, 10% duty cycle), and features integrated ESD protection per ANSI/ESDA/JEDEC JS-001 Class 2. Used in macrocell LTE/5G TDD infrastructure final-stage amplifiers.
For engineers reviewing the PTVA104501EHV1XWSA1 datasheet, PTVA104501EHV1XWSA1 pinout, PTVA104501EHV1XWSA1 application, or PTVA104501EHV1XWSA1 equivalent, key selection criteria include pulsed RF performance at 50 V bias, thermal resistance (0.13°C/W case-to-heatsink), broadband input/output matching, and compliance with human-body model ESD Class 2 requirements.
Technical Context
This device operates as a single-ended Class AB RF power amplifier stage with gate bias set for 200 mA quiescent drain current at 50 V VDD. Its internal structure integrates a monolithic LDMOS die mounted on a copper-tungsten baseplate for low thermal resistance and high ruggedness under load mismatch.
Designed for pulsed operation across 960–1215 MHz, it supports variable-duty-cycle waveforms including 10% (128 µs) and 22.7% (3.354 ms burst) conditions while maintaining <0.3 dB gain flatness and <−10 dB IRL over full bandwidth. Output matching is optimized for 50 Ω systems without external harmonic traps.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 960–1215 MHz - Covers entire UHF TDD band for 5G NR n7/n8/n20/n28 and LTE Bands 8/20/32. |
| Peak Output Power | 450 W - Achieved at 50 V, 200 mA IDQ, 128 µs pulse, 10% duty cycle, 25°C case temperature. |
| Small-Signal Gain | 22 dB - Measured at 1090 MHz, enabling single-stage amplification without intermediate driver stages. |
| Drain Efficiency | 65% - At 450 W peak output, reducing heat sink size and DC power supply requirements. |
| Thermal Resistance | 0.13°C/W - Case-to-heatsink value enables stable operation up to 100°C ambient with forced-air cooling. |
| ESD Rating | HBM Class 2 (≥2 kV) - Integrated protection eliminates need for external TVS diodes in RF path. |
| Input/Output Match | 50 Ω broadband - Internally matched for 960–1215 MHz; no external tuning required for nominal load. |
Pinout & Package
PTVA104501EHV1XWSA1 uses an industry-standard air-cavity ceramic/metal flanged package (SOT-1222A) with electrically isolated copper-tungsten baseplate. The package provides direct thermal path to heatsink and RF shielding via metal lid and grounded flange.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Source (Flange) | RF Ground / Thermal Path | Electrically connected to heatsink; serves as primary RF return and thermal conduction surface. |
| Gate | RF Input Control Terminal | High-impedance control node; requires DC blocking and impedance-matching network per application circuit. |
| Drain | RF Output Power Terminal | High-current RF output node; connects directly to output matching network and VDD decoupling. |
Key Features
| Feature | Design Value |
|---|---|
| Broadband Matching | Internally matched for 960–1215 MHz; eliminates discrete matching components in reference design. |
| Thermal Robustness | 0.13°C/W RthCH enables >100°C case temperature operation with standard heatsinks. |
| Pulsed Ruggedness | Withstands VSWR ≥6.5:1 at all phase angles under 450 W peak output without degradation. |
| ESD Protection | Integrated HBM Class 2 (≥2 kV) protection on gate and drain terminals reduces BOM count. |
| Gain Flatness | ±0.3 dB over 960–1215 MHz at POUT = 450 W peak ensures consistent modulation envelope response. |
Applications
| Macrocell Base Station PA | 5G TDD Massive MIMO TRX |
|---|---|
|
Use Scenario: Final-stage RF power amplifier in 4T4R or 8T8R macrocell radio units operating in Band 8 (925–960 MHz UL / 880–915 MHz DL) and Band 20 (791–821 MHz UL / 832–862 MHz DL). IC Role / Device Role / Timing Role: High-efficiency, high-linearity pulsed RF power transistor delivering 450 W peak into 50 Ω load with 65% drain efficiency. Use Value: Enables single-device final stage for 20 W average power systems, reducing system complexity versus multi-stage solutions. |
Use Scenario: Transmit chain amplifier in active antenna system (AAS) modules supporting 5G NR TDD bands n41 (2496–2690 MHz) and n78 (3300–3800 MHz) using harmonic suppression techniques. IC Role / Device Role / Timing Role: Pulsed RF power stage operating at 10–22.7% duty cycle with 128 µs–3.354 ms burst timing for TDD frame structure. Use Value: Maintains <0.3 dB gain flatness and <−10 dB IRL across full band, preserving EVM under dynamic load conditions. |
| Avionics SSR Transponder | Maritime AIS Class A |
|
Use Scenario: Mode S secondary surveillance radar (SSR) ground station transmitter operating at 1030 MHz interrogation and 1090 MHz reply frequencies. IC Role / Device Role / Timing Role: High-reliability RF power amplifier delivering 450 W peak pulses with ≤128 µs width and precise rise/fall time control. Use Value: Meets RTCA DO-160 Section 22 lightning-induced transient immunity due to integrated ESD protection and rugged SOA. |
Use Scenario: Class A Automatic Identification System (AIS) transmitter in commercial vessels, operating at 161.975 MHz and 162.025 MHz with 26.7 kbps GMSK modulation. IC Role / Device Role / Timing Role: High-efficiency RF PA stage supporting 12.5 W average output with 450 W peak capability during packet bursts. Use Value: Achieves EN 60945 maritime EMC compliance with <−36 dBc harmonics and <−60 dBc spurious emissions at rated output. |
Availability
PTVA104501EHV1XWSA1 is available at Aetrix Electronics and suitable for macrocell base stations, 5G TDD active antenna systems, avionics SSR transponders, and maritime AIS Class A transmitters requiring stable component supply and long-term industrial lifecycle support.
Supply support for PTVA104501EHV1XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with core expertise in RF power, secure edge processing, and analog interface technologies.
PTVA104501EHV1XWSA1 belongs to NXP's Airfast RF Power portfolio, engineered specifically for high-efficiency, thermally robust, and ruggedized RF power amplification in cellular infrastructure and critical wireless communication systems.
FAQ
What is the recommended gate bias voltage and current for PTVA104501EHV1XWSA1?
The device is specified for VGS ≈ −2.2 V to achieve IDQ = 200 mA at VDD = 50 V and TCASE = 25°C. Gate voltage must be stabilized with low-noise, low-drift bias circuitry; typical reference designs use LM334-based current sources or precision DAC-controlled op-amp followers to maintain ±1% IDQ stability over temperature.
Can PTVA104501EHV1XWSA1 operate in continuous-wave (CW) mode?
Yes - it delivers 250 W CW output at 960 MHz with 55% efficiency and 20 dB gain when biased at VDD = 36 V, IDQ = 150 mA, and TCASE = 25°C. Derating is required above 25°C case temperature; maximum safe CW operation is limited to 180 W at 85°C case temperature per SOA curves in the datasheet.
What thermal interface material is recommended for mounting PTVA104501EHV1XWSA1?
NXP specifies thermal grease with 0.2 W/m·K minimum conductivity and bond line thickness ≤0.05 mm. Recommended materials include Dow Corning TC-5122 or Parker Chomerics CHO-THERM 5500, applied uniformly to the copper-tungsten flange. Mechanical clamping force must be 35–45 lbf/in to ensure optimal thermal contact without die cracking.
Does PTVA104501EHV1XWSA1 require external harmonic filtering?
No - the internal matching network provides sufficient harmonic suppression to meet FCC Part 22/24 and ETSI EN 301 908 limits at 450 W peak output. Measured 2nd harmonic is −32 dBc and 3rd is −41 dBc at 1090 MHz; however, system-level filtering may still be needed for co-location compliance in dense RF environments.
PTVA104501EHV1XWSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- H-33288-2
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 960MHz ~ 1.215GHz
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- 105 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- H-33288-2
PTVA104501EHV1XWSA1 FAQ
1.How can I place an order for PTVA104501EHV1XWSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTVA104501EHV1XWSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTVA104501EHV1XWSA1 reliable?
The price and inventory of PTVA104501EHV1XWSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTVA104501EHV1XWSA1 is usually 5 days.
3.What payment methods are accepted for PTVA104501EHV1XWSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTVA104501EHV1XWSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTVA104501EHV1XWSA1?
PTVA104501EHV1XWSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTVA104501EHV1XWSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTVA104501EHV1XWSA1?
For technical support, including PTVA104501EHV1XWSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTVA104501EHV1XWSA1 requirements.
6.How does Aetrix verify that PTVA104501EHV1XWSA1 is sourced from the original manufacturer or authorized distributors?
All PTVA104501EHV1XWSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTVA104501EHV1XWSA1 meets industry standards.
7.What is the process for return or replacement of PTVA104501EHV1XWSA1?
All PTVA104501EHV1XWSA1 units undergo pre-shipment inspection (PSI). If there is an issue with PTVA104501EHV1XWSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTVA104501EHV1XWSA1 part is unused and in its original packaging.
Return procedure for PTVA104501EHV1XWSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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