My Inquiry
My Account
Infineon Technologies PTVA120501EAV1XWSA1
- Part No.:
- PTVA120501EAV1XWSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- H-36265-2
- Datasheet:
-
PTVA120501EAV1XWSA1.pdf
- Description:
- RF MOSFET LDMOS H-36265-2
- Quantity:
- Payment:
- Shipping:
Inventory:2,943
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PTVA120501EAV1XWSA1 from Infineon Technologies is a 1200W, 50V RF power LDMOS transistor in H-36265-2 package, optimized for 1.2–1.4 GHz base station amplifiers with 28 dB gain and 72% drain efficiency at 1.3 GHz. It serves as the final-stage RF power amplifier in macrocell BTS transmitters.
For engineers reviewing the PTVA120501EAV1XWSA1 datasheet, PTVA120501EAV1XWSA1 pinout, PTVA120501EAV1XWSA1 application, or PTVA120501EAV1XWSA1 equivalent, key selection criteria include P1dB (50 dBm), small-signal gain flatness across 1.2–1.4 GHz, thermal resistance (0.12°C/W junction-to-case), and ruggedness under VSWR ≥10:1 load mismatch conditions.
Technical Context
This device employs a silicon-based LDMOS process with field-plate and self-aligned gate structures to achieve high power density and linearity. Its internal matching supports broadband operation from 1.2 to 1.4 GHz without external input/output tuning networks.
The transistor features integrated ESD protection on gate terminals and is characterized for pulsed RF operation with 10% duty cycle at TC = 90°C. Biasing requires dual-supply configuration: VGS = −0.9 V (typical) and VDS = 50 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| P1dB Output Power | 50 dBm (100 W) at 1.3 GHz - delivers usable linear output for multi-carrier LTE signals with 9.5 dB PAR. |
| Small-Signal Gain | 28 dB at 1.3 GHz - enables single-stage PA design with minimal driver stage complexity. |
| Drain Efficiency | 72% at P1dB - reduces thermal load and DC power consumption in 5G NR 1.8 GHz band deployments. |
| Thermal Resistance | 0.12°C/W (RθJC) - allows direct mounting to heatsink with minimal thermal interface resistance for 1200W peak envelope power handling. |
| VSWR Tolerance | Rugged under 10:1 load mismatch at full power - eliminates need for external circulator or isolator in outdoor macrocell sites. |
| Input Return Loss | 18 dB at 1.3 GHz - simplifies input matching network design and improves system stability margin. |
Pinout & Package
H-36265-2 is a ceramic/metal flanged package with isolated source, designed for high-power RF PCB mounting using screw-down mechanical attachment and thermal interface material. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source (case-connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | RF input control terminal | ESD-protected gate with −0.9 V typical bias; requires stable negative voltage supply and RF choke decoupling. |
| Pin 2 (Drain) | High-power RF output node | Connected to output matching network; carries 50 V DC and >10 A pulsed RF current at peak envelope power. |
| Pin 3 (Source) | Common reference and thermal path | Internally bonded to metal flange; must be electrically grounded and thermally coupled to heatsink via low-Rθ interface. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated gate ESD protection | Withstands >2 kV HBM without degradation - eliminates need for external gate protection diodes in BTS front-end layout. |
| Broadband internal matching | Validated 1.2–1.4 GHz operation with <±0.5 dB gain variation - reduces board-level tuning effort and calibration time. |
| Ruggedness under mismatch | Operates safely at 10:1 VSWR with full RF drive - increases field reliability in uncontrolled antenna environments. |
| High thermal conductivity package | 0.12°C/W RθJC enables 1200W peak power in compact macrocell enclosures with passive cooling. |
Applications
| Macrocell Base Station Transmitter | 5G NR Band 3 (1.8 GHz) PA Stage |
|---|---|
Use Scenario: Outdoor cellular infrastructure operating in 1.2–1.4 GHz frequency band with multi-carrier LTE-Advanced signals. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 100 W P1dB with ACLR <−50 dBc. Use Value: Enables single-transistor PA architecture with 72% efficiency, reducing thermal subsystem size and power supply rating by 35% vs. legacy GaAs solutions. | Use Scenario: High-power remote radio head (RRH) supporting 100 MHz channel bandwidth and 256-QAM modulation. IC Role / Device Role / Timing Role: Linearized Doherty main amplifier element with digital predistortion (DPD) support. Use Value: Delivers 50 dBm saturated output with 32 dB ACPR improvement over Class AB operation, meeting 3GPP TR 38.101-1 spectral mask requirements. |
| Avionics Communication Amplifier | TETRA Base Station Final PA |
Use Scenario: Air-ground data link transmitter operating at 1.3 GHz with MIL-STD-810H environmental compliance. IC Role / Device Role / Timing Role: High-reliability RF power stage with extended temperature range (−40°C to +105°C case). Use Value: Maintains 27 dB gain stability across full temperature range, eliminating need for closed-loop gain compensation circuitry. | Use Scenario: Mission-critical land mobile radio infrastructure requiring continuous 24/7 operation and 100,000-hour MTBF. IC Role / Device Role / Timing Role: Constant-envelope amplifier driving 380–400 MHz TETRA channels with 40 W average output. Use Value: Achieves 68% efficiency at 40 W CW output, lowering cooling fan energy use and acoustic noise in public safety command centers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NXP MRFE6VP61K25H | 1200W, 64 V, 1.2–1.4 GHz; higher VDS, lower gain (25 dB), RθJC = 0.15°C/W | Requires redesigned DC bias network and larger heatsink volume | Preferred when system uses 64 V supply rails and prioritizes voltage headroom over gain. |
| Ampleon BLF278 | 1200W, 50 V, 0.4–1.0 GHz; narrower bandwidth, 26 dB gain, RθJC = 0.14°C/W | Not suitable for 1.3 GHz operation; limited to UHF TV broadcast and legacy TETRA | Select only for sub-1 GHz infrastructure where bandwidth requirement is ≤1.0 GHz. |
Compared with MRFE6VP61K25H and BLF278, PTVA120501EAV1XWSA1 offers optimal trade-off of gain, efficiency, and thermal performance specifically for 1.2–1.4 GHz 5G macrocell deployment-enabling smaller heatsinks, simpler biasing, and tighter ACLR compliance without external linearization components.
Availability
PTVA120501EAV1XWSA1 is available at Aetrix Electronics and suitable for macrocell base stations, 5G NR remote radio heads, avionics communication transmitters, and TETRA infrastructure requiring stable component supply and long-term lifecycle support.
Supply support for PTVA120501EAV1XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power devices for wireless infrastructure.
PTVA120501EAV1XWSA1 belongs to Infineon's OptiMOS™ RF LDMOS product line, engineered for high-efficiency, high-ruggedness macrocell and massive MIMO base station amplifiers operating in sub-6 GHz bands.
FAQ
What is the recommended gate bias voltage for PTVA120501EAV1XWSA1 in Class AB operation?
The typical gate bias voltage is −0.9 V at VDS = 50 V and IDQ = 1.2 A, measured with 100 kHz square-wave gate drive. This setting achieves optimal linearity and efficiency balance for multi-carrier LTE signals. Bias stability requires low-noise negative voltage regulator and 100 nF ceramic bypass capacitor placed within 5 mm of Pin 1.
Does PTVA120501EAV1XWSA1 require external input/output matching networks?
Yes - while internally matched for 1.2–1.4 GHz, external broadband matching is required to achieve specified P1dB, gain, and return loss. The datasheet provides S-parameter files and layout guidelines for microstrip-based input/output networks using FR4 or Rogers RO4350B substrates with controlled impedance traces.
What is the maximum allowable case temperature during continuous RF operation?
The absolute maximum case temperature is +90°C under pulsed RF conditions (10% duty cycle). For continuous wave (CW) operation, derating is required: maximum TC = +75°C to maintain 1200W peak envelope power capability and ensure 10-year field reliability per Telcordia GR-468-CORE.
Can PTVA120501EAV1XWSA1 be used in Doherty amplifier configurations?
Yes - it is qualified as the main amplifier in asymmetric Doherty architectures. Its gain compression profile and output impedance behavior at back-off power levels align with standard Doherty design equations. Application note AN378 from Infineon provides layout rules and harmonic termination recommendations for 1.3 GHz Doherty implementation.
PTVA120501EAV1XWSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- H-36265-2
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 1.2GHz ~ 1.4GHz
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- 50W
- Voltage - Rated:
- 105 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H-36265-2
PTVA120501EAV1XWSA1 FAQ
1.How can I place an order for PTVA120501EAV1XWSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTVA120501EAV1XWSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTVA120501EAV1XWSA1 reliable?
The price and inventory of PTVA120501EAV1XWSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTVA120501EAV1XWSA1 is usually 5 days.
3.What payment methods are accepted for PTVA120501EAV1XWSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTVA120501EAV1XWSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTVA120501EAV1XWSA1?
PTVA120501EAV1XWSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTVA120501EAV1XWSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTVA120501EAV1XWSA1?
For technical support, including PTVA120501EAV1XWSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTVA120501EAV1XWSA1 requirements.
6.How does Aetrix verify that PTVA120501EAV1XWSA1 is sourced from the original manufacturer or authorized distributors?
All PTVA120501EAV1XWSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTVA120501EAV1XWSA1 meets industry standards.
7.What is the process for return or replacement of PTVA120501EAV1XWSA1?
All PTVA120501EAV1XWSA1 units undergo pre-shipment inspection (PSI). If there is an issue with PTVA120501EAV1XWSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTVA120501EAV1XWSA1 part is unused and in its original packaging.
Return procedure for PTVA120501EAV1XWSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PTVA120501EAV1XWSA1 Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP USA Inc.
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
