Infineon Technologies PTVA123501FCV1XWSA1

Overview

PTVA123501FCV1XWSA1 from Infineon is a thermally-enhanced high-power RF LDMOS FET designed for broadband power amplifier stages in 1200–1400 MHz base station transmitters. It delivers 350 W pulsed output at 50 V, 150 mA quiescent drain current, with 17 dB typical gain and 55% drain efficiency at 1300 MHz under 300 µs/12% duty cycle conditions.

For engineers reviewing the PTVA123501FCV1XWSA1 datasheet, PTVA123501FCV1XWSA1 pinout, PTVA123501FCV1XWSA1 application, or PTVA123501FCV1XWSA1 equivalent, key selection criteria include thermal resistance (0.34 °C/W), 10:1 load mismatch ruggedness, internal broadband matching, and H-37248-2 earless flange package compatibility with forced-air or liquid-cooled heatsinks.

Technical Context

This device operates as a Class AB RF power transistor in macrocell and massive MIMO base station PA final stages. Its LDMOS process enables stable operation at 50 V supply with 105 V V_DSS, supporting high peak-to-average power ratio (PAPR) signals across 1200–1400 MHz without external input/output matching networks.

The H-37248-2 package features an earless thermally enhanced flange optimized for low R_θJC (0.34 °C/W at 300 W CW), integrated ESD protection (HBM > 2 kV), and capability to withstand 10:1 VSWR at all phase angles under pulsed RF stress (55.5 dBm, 300 µs, 12%, 50 V).

Key Specifications

Pinout & Package

H-37248-2 is a bolt-down, earless ceramic/metal flange package with isolated drain tab, optimized for low thermal resistance and RF grounding via direct flange mounting. Dimensions: 39.6 × 22.2 × 4.5 mm (L × W × H); flange thickness 3.2 mm; drain tab area 28.5 × 15.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRFE6VP6350HR5 and CGHV1F025S, PTVA123501FCV1XWSA1 uniquely balances 350 W pulsed output, 17 dB gain, 0.34 °C/W thermal resistance, and broadband internal matching-making it the only solution qualified for 1200–1400 MHz macrocell PA final stages without external tuning.

Availability

PTVA123501FCV1XWSA1 is available at Aetrix Electronics and suitable for macrocell base station manufacturing, massive MIMO active antenna unit assembly, and public safety land mobile radio development requiring stable component supply and long-term lifecycle support.

Supply support for PTVA123501FCV1XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power devices since 2000.

PTVA123501FCV1XWSA1 belongs to Infineon's Thermally Enhanced LDMOS portfolio, engineered specifically for high-reliability, high-efficiency RF power amplification in cellular infrastructure equipment.

FAQ

What is the maximum continuous-wave (CW) power dissipation for PTVA123501FCV1XWSA1?

The device supports 300 W CW operation at TCASE = 70°C, enabled by its 0.34 °C/W junction-to-case thermal resistance. Derating is required above 70°C case temperature per the R_θJC curve in Figure 12 of the datasheet; at 85°C case, max CW power drops to ~240 W to maintain TJ ≤ 200°C.

Does PTVA123501FCV1XWSA1 require external gate bias sequencing?

No external gate bias sequencing circuitry is required. The device operates with a single +3.35 V nominal gate voltage (VGS range 3–4 V) at IDQ = 150 mA, and its integrated ESD protection tolerates gate-source transients up to ±12 V without damage or latch-up.

Can PTVA123501FCV1XWSA1 be used in Doherty amplifier configurations?

Yes-the device's broadband internal matching, 17 dB small-signal gain, and symmetrical load-pull contours at 1200–1400 MHz make it suitable for both carrier and peaking paths in Doherty PAs. Load-pull data shows Z_OPT of 2.73 – j1.51 Ω at 1300 MHz for peak efficiency operation.

What is the recommended PCB footprint and thermal pad layout for H-37248-2?

Infineon specifies a 28.5 × 15.2 mm copper thermal pad with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner ground planes. The footprint must maintain 0.15 mm solder paste stencil thickness and use SnAgCu paste; flange mounting torque is 1.1–1.3 N·m per screw.