Infineon Technologies PTVA127002EVV1R0XTMA1

Overview

PTVA127002EVV1R0XTMA1 from Infineon is a thermally-enhanced high-power RF LDMOS FET designed for broadband power amplifier stages in 1200–1400 MHz base station transmitters. It delivers 700 W pulsed RF output at 50 V, achieves 16.6 dB gain and 57% drain efficiency at 1200 MHz, and withstands 10:1 load mismatch under 700 W peak RF pulse (300 µs, 10% duty cycle).

For engineers reviewing the PTVA127002EVV1R0XTMA1 datasheet, PTVA127002EVV1R0XTMA1 pinout, PTVA127002EVV1R0XTMA1 application, or PTVA127002EVV1R0XTMA1 equivalent, key selection criteria include thermal resistance (0.36 °C/W), ruggedness under mismatched loads, gate voltage range (–6 to +12 V), and H-36275-4 bolt-down flange package compatibility with high-power RF heatsinking.

Technical Context

This dual-side LDMOS FET operates in Class AB mode with 150 mA quiescent drain current per side and supports pulsed RF operation up to 1400 MHz. Its integrated ESD protection meets Human Body Model Class 2 (ANSI/ESDA/JEDEC JS-001), and its low R_DS(on) (0.1 Ω typ.) enables high-current switching with minimal conduction loss.

The device features broadband input/output matching across 1200–1400 MHz, verified via load-pull characterization at max P_OUT, max G_T, and max efficiency points. Thermal performance is optimized via direct die attachment to the bolt-down flange, enabling stable operation at junction temperatures up to 225 °C.

Key Specifications

Pinout & Package

PTVA127002EVV1R0XTMA1 is housed in the H-36275-4 thermally enhanced bolt-down flange package. The flange is electrically connected to the source terminals and serves as both mechanical mounting surface and primary thermal path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power RF LDMOS amplifier applications.

Compared with MRFE6VP6750HR5 and BLF888B, PTVA127002EVV1R0XTMA1 uniquely combines broadband 1200–1400 MHz operation, integrated Class 2 ESD protection, and bolt-down flange in a single package-reducing system-level validation effort for telecom infrastructure OEMs.

Availability

PTVA127002EVV1R0XTMA1 is available at Aetrix Electronics and suitable for macrocell base station transmitters, public safety LMR repeaters, avionics communication amplifiers, and ISM band industrial heater drivers requiring stable component supply and long-lifecycle support.

Supply support for PTVA127002EVV1R0XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and qualification facilities certified to IATF 16949 and ISO 9001.

PTVA127002EVV1R0XTMA1 belongs to Infineon's high-power RF LDMOS portfolio, engineered specifically for next-generation cellular infrastructure where thermal reliability, broadband linearity, and field-deployment ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for PTVA127002EVV1R0XTMA1?

The device does not specify a maximum continuous drain current in absolute terms; instead, it is characterized for pulsed operation at 700 W peak with 300 µs pulse width and 12% duty cycle. Under those conditions, peak drain current reaches approximately 22.7 A at 1300 MHz. Continuous operation is limited by thermal constraints-junction temperature must remain ≤225 °C, requiring heatsink design to maintain case temperature ≤70 °C.

Does PTVA127002EVV1R0XTMA1 require external gate protection diodes?

No. The device integrates ESD protection meeting Human Body Model Class 2 (ANSI/ESDA/JEDEC JS-001), eliminating the need for external gate protection diodes in standard PCB layouts. This integration was validated through 2000 V HBM testing per JEDEC JESD22-A114F, with no parameter shift observed after 1000 cycles.

Can PTVA127002EVV1R0XTMA1 operate at 50% duty cycle?

Yes-characterization data shows stable operation at 32 ms pulse width and 50% duty cycle, delivering 641 W P_OUT with 56.6% efficiency at 1300 MHz. However, thermal design must ensure case temperature remains ≤70 °C, as sustained 50% duty cycle increases average power dissipation significantly compared to 12% duty cycle operation.

What is the recommended gate bias sequence during power-up?

Apply V_DD (50 V) first, then ramp gate voltage (V_GS) from 0 V to 3.35 V (typical operating point) using a controlled current-limited supply. Reverse sequencing risks gate oxide stress due to uncontrolled channel formation. Infineon recommends gate ramp time ≥100 µs and inclusion of 10 Ω series gate resistors to suppress RF oscillation during transition.