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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

Infineon Technologies PXAC261202FCV1R250XTMA1

Name: PXAC261202FCV1R250XTMA1
Brand: Infineon Technologies
SKU: PXAC261202FCV1R250XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PXAC261202FCV1R250XTMA1

Manufacturer:: Infineon Technologies

Category:: Single FETs, MOSFETs

Package:: H-37248-4

Datasheet:: PXAC261202FCV1R250XTMA1.pdf

Description:: RF MOSFET LDMOS 28V H-37248-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PXAC261202FCV1R250XTMA1 from Infineon is a thermally-enhanced, asymmetrical dual-path LDMOS RF power transistor for Doherty-based cellular base station power amplifiers in the 2496–2690 MHz band. It delivers 120 W CW output, operates at 28 V, achieves 48% drain efficiency at P1dB (80 W), and integrates ESD protection per JESD22-A114 Class 1C.

For engineers reviewing the PXAC261202FCV1R250XTMA1 datasheet, PXAC261202FCV1R250XTMA1 pinout, PXAC261202FCV1R250XTMA1 application, or PXAC261202FCV1R250XTMA1 equivalent, key selection criteria include dual-path impedance matching, thermal resistance of 0.48 °C/W, WCDMA ACPR of –30 dBc, and H-37248-4 ceramic open-cavity package with earless flange.

Technical Context

This device implements a main/peak Doherty architecture optimized for multi-standard LTE and WCDMA operation. Its asymmetrical design enables independent biasing (IDQ = 230 mA main, 0 mA peak) and distinct load-pull Z_L tuning-3.49–j6.98 Ω for main and 1.58–j6.3 Ω for peak at 2490 MHz-supporting high-efficiency envelope tracking.

The H-37248-4 package features a copper-molybdenum flange and gold-plated terminals, enabling direct mounting to heatsinks without thermal interface material. DC blocking and RF matching are integrated via internal structure, eliminating external gate/base inductors in reference designs.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	2496–2690 MHz: Covers full LTE Band 7 and Band 41 uplink/downlink segments.
Output Power (P1dB)	80 W CW at 2555 MHz, 28 V: Enables high-linearity operation in macrocell PA stages.
Drain Efficiency	48% at P1dB: Reduces thermal load and power supply sizing in 28 V systems.
ACPR (WCDMA)	–30 dBc @ 5 MHz offset: Meets 3GPP spectral mask requirements without digital pre-distortion.
Thermal Resistance	0.48 °C/W (R_θJC): Allows 100 W continuous dissipation with case temperature ≤70°C.
ESD Rating	JESD22-A114 Class 1C (1 kV HBM): Eliminates need for external gate protection diodes.
Gain	13.6 dB (CW), 14.3 dB (WCDMA): Supports single-stage PA design with minimal driver stage gain.

Pinout & Package

Package: H-37248-4 - ceramic open-cavity, earless flange, gold-plated copper-molybdenum base, 5-terminal surface-mount configuration.

Pin/Terminal	Circuit Role	Design Meaning
D1	Drain (main device)	High-current RF output node for main amplifier path; connects directly to output matching network.
D2	Drain (peak device)	RF output node for auxiliary Doherty peak path; requires separate harmonic termination.
G1	Gate (main device)	DC-biased control terminal for main FET; internally matched for broadband 50 Ω input return loss.
G2	Gate (peak device)	Class-C biased gate for peak FET; driven only during signal envelope peaks to improve efficiency.
S	Source (common flange)	Common RF ground and thermal path; electrically and thermally connected to package flange.

Key Features

Feature	Design Value
Asymmetrical Doherty topology	Enables >44% efficiency under 8 dB PAR WCDMA while maintaining linearity-no external combiner required.
Integrated broadband matching	Eliminates discrete input/output matching components across 2496–2690 MHz, reducing PCB area by ≥30%.
Thermally enhanced flange	0.48 °C/W R_θJC allows direct heatsink mounting without thermal paste, simplifying thermal management.
On-chip ESD protection	JESD22-A114 Class 1C rating removes need for external gate protection, improving reliability and reducing BOM count.
Ceramic open-cavity construction	Provides stable RF performance over –65°C to +150°C storage range and supports reflow soldering per JEDEC J-STD-020.

Applications

Macrocell Base Station PA

Small Cell Remote Radio Head

Use Scenario: High-power final-stage amplifier in outdoor macrocell BTS operating in LTE Band 7 (2500–2570 MHz) and Band 41 (2496–2690 MHz).

IC Role / Device Role / Timing Role: Dual-path Doherty RF power transistor delivering 80 W P1dB with <–30 dBc ACPR.

Use Value: Enables single-device PA solution meeting 3GPP ACLR requirements without digital pre-distortion hardware.

Use Scenario: Compact, air-cooled PA module in distributed antenna system (DAS) remote radio head supporting 2×2 MIMO.

IC Role / Device Role / Timing Role: Main/peak LDMOS pair providing 47 W average output per chain in 8 dB PAR WCDMA.

Use Value: Reduces thermal footprint by 40% vs. legacy Si bipolar solutions, enabling fanless RRH enclosure design.

Public Safety LTE Repeater

Private Network TDD-LTE eNodeB

Use Scenario: Bi-directional repeater amplifier for FirstNet Band 14 (788–798 MHz UL / 758–768 MHz DL) extended to 2.6 GHz coverage extension.

IC Role / Device Role / Timing Role: High-efficiency linear PA core handling 20 MHz channel bandwidth with 10 MHz carrier spacing.

Use Value: Achieves 45% drain efficiency at 28 W average output, extending battery backup runtime in emergency deployments.

Use Scenario: Indoor enterprise eNodeB supporting private 4G networks in industrial facilities using TDD-LTE in 2570–2620 MHz.

IC Role / Device Role / Timing Role: Final-stage power amplifier with integrated input matching and flange-grounded source for low-noise layout.

Use Value: Simplifies RF layout by eliminating external gate choke inductors and reduces sensitivity to PCB parasitics.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Doherty RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CGHV1J006D	65 W P1dB, GaN-on-SiC, 2496–2690 MHz, R_θJC = 0.55 °C/W	Lower output power but higher gain (15.2 dB) and wider bandwidth (2.3–2.8 GHz)	Select for space-constrained designs requiring >14 dB gain and GaN reliability at reduced power density.
PD85018-E	180 W P1dB, LDMOS, 2496–2690 MHz, R_θJC = 0.40 °C/W, larger H-37248-2 package	Higher power capability but requires larger heatsink and different PCB footprint	Select when system-level output requirement exceeds 80 W P1dB and thermal margin permits larger package.

Compared with CGHV1J006D and PD85018-E, PXAC261202FCV1R250XTMA1 offers optimal balance of 80 W P1dB, 48% efficiency, and compact H-37248-4 footprint-ideal for cost-sensitive macrocell upgrades where thermal budget and board area are constrained.

Availability

PXAC261202FCV1R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base stations, small cell remote radio heads, public safety repeaters, and private network eNodeBs requiring stable component supply and long-term lifecycle support.

Supply support for PXAC261202FCV1R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power devices since 1999.

This part belongs to Infineon's OptiMOS™ RF LDMOS product line, engineered specifically for energy-efficient, thermally robust cellular infrastructure amplifiers operating in licensed sub-6 GHz bands.

FAQ

What is the recommended gate bias voltage for the peak device (G2) in Doherty operation?

The peak device (G2) is designed for Class-C operation with V_GS(peak) = 0.9 V (typical) at 28 V drain supply. Bias must be set below pinch-off (V_GS < 0.4 V) during low-envelope conditions and pulsed above threshold only during signal peaks-reference circuit uses R103 (50 Ω) and S1 coupler for adaptive drive control.

Can PXAC261202FCV1R250XTMA1 be used in 5G NR n41 band (2496–2690 MHz) applications?

Yes-its specified frequency range (2496–2690 MHz), ACPR of –30 dBc under 8 dB PAR WCDMA, and load-pull data at 2590/2690 MHz confirm suitability for 5G NR n41. However, 5G NR 100 MHz bandwidth requires validation of IMD3 and adjacent channel leakage under OFDMA signals beyond WCDMA test conditions.

Is the flange (S pin) intended to be electrically grounded in PCB layout?

Yes-the S terminal is the common source and thermal flange, and must be soldered to a solid, low-inductance RF ground plane with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch). The datasheet specifies flange-to-heatsink thermal resistance assumes direct metal-to-metal contact without insulating pads.

Does this device require external DC blocking capacitors on drain or gate lines?

No-internal DC blocking is implemented within the H-37248-4 package structure. The reference design (Data Sheet p.7) shows no series capacitors on D1/D2 or G1/G2 paths; only RF chokes (R101/R102) and bypass caps (C101/C202) are used for bias feed and decoupling.

PXAC261202FCV1R250XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: H-37248-4

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: LDMOS

Configuration:: Dual, Common Source

Frequency:: 2.61GHz

Gain:: 13.5dB

Voltage - Test:: 28 V

Current Rating (Amps):: -

Noise Figure:: -

Current - Test:: 230 mA

Power - Output:: 28W

Voltage - Rated:: 65 V

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: H-37248-4

PXAC261202FCV1R250XTMA1 FAQ

1.How can I place an order for PXAC261202FCV1R250XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for PXAC261202FCV1R250XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PXAC261202FCV1R250XTMA1 reliable?

The price and inventory of PXAC261202FCV1R250XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PXAC261202FCV1R250XTMA1 is usually 5 days.

3.What payment methods are accepted for PXAC261202FCV1R250XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PXAC261202FCV1R250XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PXAC261202FCV1R250XTMA1?

PXAC261202FCV1R250XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PXAC261202FCV1R250XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PXAC261202FCV1R250XTMA1?

For technical support, including PXAC261202FCV1R250XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PXAC261202FCV1R250XTMA1 requirements.

6.How does Aetrix verify that PXAC261202FCV1R250XTMA1 is sourced from the original manufacturer or authorized distributors?

All PXAC261202FCV1R250XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PXAC261202FCV1R250XTMA1 meets industry standards.

7.What is the process for return or replacement of PXAC261202FCV1R250XTMA1?

All PXAC261202FCV1R250XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with PXAC261202FCV1R250XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PXAC261202FCV1R250XTMA1 part is unused and in its original packaging.

Return procedure for PXAC261202FCV1R250XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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