Infineon Technologies PXAC261202FCV1XWSA1

Overview

PXAC261202FCV1XWSA1 from Infineon is a thermally-enhanced, asymmetrical dual-path LDMOS RF power transistor designed for Doherty-mode cellular base station power amplifiers in the 2496–2690 MHz band. It delivers 120 W CW output, operates at 28 V, achieves 13.6 dB gain and 48% drain efficiency at 2555 MHz, and integrates ESD protection per JESD22-A114 Class 1C.

For engineers reviewing the PXAC261202FCV1XWSA1 datasheet, PXAC261202FCV1XWSA1 pinout, PXAC261202FCV1XWSA1 application, or PXAC261202FCV1XWSA1 equivalent, this device supports multi-standard 3GPP WCDMA (8 dB PAR), two-carrier WCDMA IMD performance, and high-reliability thermal management in macrocell and massive MIMO PA stages.

Technical Context

The PXAC261202FCV1XWSA1 implements a monolithic dual-gate LDMOS structure with separate main and peak amplifier paths optimized for Doherty operation. Its asymmetric design enables independent biasing (IDQ = 230 mA main, 0 mA peak) and distinct load-pull impedance tuning-Z_L = 3.49 – j6.98 Ω (main), 1.58 – j6.3 Ω (peak) at 2490 MHz.

It features integrated input/output broadband matching, ceramic open-cavity H-37248-4 packaging with earless flange, and low R_θJC = 0.48 °C/W at 100 W CW. The device sustains 225 °C junction temperature and supports 0–32 V operating voltage range with V_GS(peak) = 0.9 V.

Key Specifications

Pinout & Package

Package: H-37248-4 - ceramic open-cavity, earless flange, thermally enhanced for high-power RF applications. Flange serves as common source terminal and primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Doherty RF power amplifier applications.

Compared with MRFE6VP61K25H and QPD1025, the PXAC261202FCV1XWSA1 offers superior thermal resistance and built-in ESD hardening for simplified production, while trading off some bandwidth flexibility and peak GaN efficiency for proven LDMOS reliability in cellular infrastructure.

Availability

PXAC261202FCV1XWSA1 is available at Aetrix Electronics and suitable for macrocell base stations, massive MIMO active antenna units, and private LTE/5G NR infrastructure requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for PXAC261202FCV1XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power solutions for wireless infrastructure.

The PXAC261202FC belongs to Infineon's OptiMOS™ RF LDMOS product line, engineered specifically for energy-efficient, thermally robust Doherty power amplifiers in 4G/5G macrocell and active antenna systems.

FAQ

What is the recommended gate bias for the main and peak devices?

The main device (G1) requires V_GS = 2.6 V typical at I_DQ = 230 mA, while the peak device (G2) operates at V_GS(peak) = 0.9 V with zero quiescent current. These values are validated in Infineon's Doherty reference fixture and must be set independently using precision bias networks to maintain optimal Doherty efficiency and linearity.

Can PXAC261202FCV1XWSA1 be used in Class AB mode outside Doherty configuration?

Yes-it supports Class AB operation with 13.6 dB gain and 48% efficiency at 2555 MHz, delivering 80 W P1dB. However, its asymmetric internal matching and dual-gate structure are optimized for Doherty; standalone Class AB use forfeits the efficiency and linearity benefits of peak-path activation and may require external matching re-tuning.

What is the maximum safe operating voltage and why is it limited to 32 V?

The absolute maximum V_DD is +32 V per datasheet ratings. This limit ensures safe operation below the 65 V V_(BR)DSS breakdown threshold while accounting for transient voltage spikes, PCB trace inductance, and thermal derating at elevated junction temperatures up to 225 °C.

Does the H-37248-4 package require solder paste or conductive epoxy for flange attachment?

The flange must be attached using high-thermal-conductivity solder paste (e.g., Indium 5.3A) applied to the copper heatsink pad, followed by reflow per IPC-J-STD-020. Conductive epoxy is not recommended-it introduces interfacial voids and increases R_θJC beyond the specified 0.48 °C/W, risking thermal runaway at full 120 W operation.