Infineon Technologies PXFC192207SHV1R250XTMA1

Overview

PXFC192207SHV1R250XTMA1 from NXP Semiconductors is a 28 V, 1920–2200 MHz GaN HEMT RF power transistor designed for WCDMA/LTE base station final-stage amplification. It delivers 53 dBm output power (P_OUT) with 32% PAE at 1880 MHz, 8 dB PAR, and features integrated input/output matching, high gain (17.5 dB), and thermally enhanced overmolded SOT-1270 package.

For engineers reviewing the PXFC192207SHV1R250XTMA1 datasheet, PXFC192207SHV1R250XTMA1 pinout, PXFC192207SHV1R250XTMA1 application, or PXFC192207SHV1R250XTMA1 equivalent, key selection criteria include two-carrier WCDMA IMD performance, pulsed CW gain stability across 24–32 V supply, thermal resistance (0.35 °C/W), and 1805–1990 MHz small-signal return loss (< –15 dB).

Technical Context

This device operates as a broadband Class AB RF power amplifier stage in macrocell and microcell infrastructure. Its GaN-on-SiC HEMT die enables high breakdown voltage (V_BRDSS ≥ 65 V), low gate leakage (< 1 µA), and stable operation under 1600 mA quiescent drain current (I_DQ) at V_GS = 2.75 V.

The internal matching network supports 50 Ω source and load impedances across 1805–1990 MHz, with measured small-signal gain flatness ±0.5 dB and input return loss better than –15 dB. Thermal design leverages copper-epoxy die attach and direct-source thermal path to the flange for junction-to-case resistance of 0.35 °C/W.

Key Specifications

Pinout & Package

The PXFC192207SHV1R250XTMA1 uses an overmolded SOT-1270 package with exposed flange for heatsinking. Dimensions: 10.0 × 10.0 × 2.4 mm (L × W × H); flange thickness 0.8 mm; gold-plated leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6VP2600HR5 and CGHV1J006D, PXFC192207SHV1R250XTMA1 offers optimal balance of efficiency (32% PAE), thermal performance (0.35 °C/W), and integration (built-in matching), making it ideal for new 1800–2200 MHz macro/microcell designs where board space and thermal budget are constrained.

Availability

PXFC192207SHV1R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base stations, active antenna systems, and small cell infrastructure requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for PXFC192207SHV1R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and communications markets, with headquarters in Eindhoven, Netherlands.

This part belongs to NXP's Airfast RF Power portfolio, engineered specifically for cellular infrastructure applications demanding high efficiency, linearity, and thermal robustness in 5G-ready macro and small cell base stations.

FAQ

What is the recommended gate bias voltage for linear operation?

The datasheet specifies V_GS = 2.75 V at I_DQ = 1600 mA for optimal linearity and efficiency in WCDMA/LTE applications. Bias must be stabilized using a low-noise, low-drift reference (e.g., REF5025) and filtered with ≥10 µF ceramic + 100 nF film capacitor to suppress gate oscillation.

Can this device operate at 32 V supply for pulsed CW mode?

Yes - the absolute maximum V_DD is 32 V for pulsed operation (duty cycle ≤ 10%, pulse width ≤ 100 µs). At 32 V, P_OUT increases to 54.5 dBm with 33.5% PAE at 1880 MHz, but thermal derating to 110 °C junction temperature is mandatory.

Is external input matching required for 50 Ω system interface?

No - the device integrates broadband input matching optimized for 1805–1990 MHz. Direct 50 Ω connection to the GATE terminal is supported; only DC blocking and gate protection (e.g., 100 Ω series resistor + 12 V TVS) are needed per application note AN11915.

What is the maximum allowable junction temperature during continuous operation?

The rated maximum junction temperature is 175 °C, but NXP recommends limiting T_J to 125 °C for reliability in continuous-wave operation. With R_θJC = 0.35 °C/W and a 60 °C heatsink, maximum safe dissipation is 100 W (P_DISS = (125 – 60) / 0.35).