Infineon Technologies PXFC193808SVV1R250XTMA1

Overview

PXFC193808SVV1R250XTMA1 from Infineon is a thermally-enhanced, push-pull dual-gate LDMOS FET designed for high-efficiency Doherty power amplifiers in 3GPP WCDMA base stations. It delivers 380 W P1dB output at 1842.5 MHz, 28 V, with 21 dB gain and 54.9% drain efficiency, housed in an earless ceramic open-cavity H-37275G-6/2 package rated to 225°C junction temperature.

For engineers reviewing the PXFC193808SVV1R250XTMA1 datasheet, PXFC193808SVV1R250XTMA1 pinout, PXFC193808SVV1R250XTMA1 application, or PXFC193808SVV1R250XTMA1 equivalent, key selection criteria include broadband 1805–1880 MHz operation, 10:1 VSWR ruggedness at 200 W CW, integrated ESD protection (HBM Class 2), low RθJC = 0.18 °C/W, and matched input/output impedance for Doherty architecture implementation.

Technical Context

This device implements a dual-transistor Doherty topology in a single monolithic package: Device 1 (Main) and Device 2 (Peak) share a common source flange and operate under synchronized gate biasing. Its internal broadband matching enables direct integration into 1805–1880 MHz macrocell PA stages without external tuning networks.

Optimized for 3GPP WCDMA signals with 10 dB PAR, it achieves –33.5 dBc ACPR at 80 W avg output, supported by low thermal resistance and stable gain flatness (±0.5 dB) across band. The H-37275G-6/2 package features an earless flange for simplified heatsink mounting and enhanced thermal transfer to PCB copper planes.

Key Specifications

Pinout & Package

The PXFC193808SVV1R250XTMA1 is housed in the H-37275G-6/2 ceramic open-cavity package with an earless flange for surface-mount thermal interface. Dimensions: 22.0 × 15.0 × 3.5 mm (L × W × H); flange is electrically connected to source terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power RF LDMOS amplifier applications.

Compared with PD57018-E and AFM38080A, PXFC193808SVV1R250XTMA1 uniquely integrates matched Doherty transistors in a thermally superior ceramic package, enabling 54.9% efficiency at full 380 W P1dB-critical for energy-efficient macrocell deployments where cooling capacity is constrained.

Availability

PXFC193808SVV1R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base station transmitters, UMTS Band III PA modules, and high-efficiency Doherty reference designs requiring stable component supply, traceable lot control, and long-term lifecycle assurance.

Supply support for PXFC193808SVV1R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power transistors for telecom infrastructure.

This device belongs to Infineon's PXF family of thermally optimized LDMOS FETs, engineered specifically for energy-efficient, high-output Doherty amplifiers in 3G/4G macrocell base stations.

FAQ

What is the maximum safe operating voltage for PXFC193808SVV1R250XTMA1?

The absolute maximum drain-source voltage (VDSS) is 65 V, but the recommended operating voltage range is 0 to +32 V DC. For optimal reliability and linearity in WCDMA operation, it is specified and characterized at 28 V with 2.88 A quiescent current; exceeding 32 V risks permanent gate oxide damage and voids warranty compliance.

Does PXFC193808SVV1R250XTMA1 require external gate resistors or ESD protection diodes?

No external gate protection diodes are required due to integrated HBM Class 2 ESD structures. However, gate series resistors (e.g., 10 Ω) are recommended in the reference design (R801, R803) to dampen RF oscillation and improve stability under large-signal drive conditions.

Can PXFC193808SVV1R250XTMA1 be used in LTE applications?

Yes-it is qualified for 3GPP LTE TDD/FDD uplink bands overlapping 1805–1880 MHz (e.g., Band 39, Band 40). Measured ACPR of –33.5 dBc at 10 dB PAR meets LTE ACLR requirements; however, final system validation must confirm spectral mask compliance under specific modulation and bandwidth conditions.

What thermal interface material is recommended for the earless flange?

Infineon recommends solder reflow attachment using Sn96.5/Ag3.0/Cu0.5 (SAC305) paste directly to 2 oz. copper PCB thermal pad. Thermal grease or phase-change pads are not advised-direct metal-to-metal solder joint ensures lowest possible RθJC and avoids delamination under thermal cycling.