Infineon Technologies PXFC211507SCV1R250XTMA1

Overview

PXFC211507SCV1R250XTMA1 from Infineon is a thermally-enhanced 150 W RF LDMOS power transistor for cellular base station power amplifiers operating in the 2110–2170 MHz band at 28 V supply, delivering 19–20.4 dB gain, 32% drain efficiency under WCDMA, and capable of 10:1 VSWR tolerance at full CW output.

For engineers reviewing the PXFC211507SCV1R250XTMA1 datasheet, PXFC211507SCV1R250XTMA1 pinout, PXFC211507SCV1R250XTMA1 application, or PXFC211507SCV1R250XTMA1 equivalent, this device supports multi-standard 3GPP WCDMA (including two-carrier) and pulsed-CW operation with integrated ESD protection, low R_θJC = 0.56 °C/W, and Pb-free H-37248G-4/2 package with formed leads.

Technical Context

This LDMOS FET operates in Class AB with fixed gate bias (V_GS = 2.6 V typical) and 960 mA quiescent drain current. It delivers broadband performance across 2110–2170 MHz using internal input/output matching networks, eliminating external tuning components in reference designs.

The device uses Infineon's advanced LDMOS process to achieve high ruggedness (65 V V_(BR)DSS), low on-resistance (R_DS(on) = 0.05 Ω), and thermal robustness up to T_J = 225 °C - critical for high-reliability macro-cell and remote radio head (RRH) amplifier stages.

Key Specifications

Pinout & Package

Package: H-37248G-4/2 - thermally enhanced ceramic/metal flange package with formed leads, earless flange design optimized for low-inductance RF grounding and high-power dissipation. Flange serves as source terminal and primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PD85015-E and BLF888S, PXFC211507SCV1R250XTMA1 offers best-in-class efficiency (32.9%) and VSWR ruggedness (10:1) specifically tuned for 2110–2170 MHz WCDMA, with optimized internal matching that reduces layout risk and validation time.

Availability

PXFC211507SCV1R250XTMA1 is available at Aetrix Electronics and suitable for macro-cell base stations, remote radio heads, and multi-standard BTS transceivers requiring stable component supply, long lifecycle support, and traceable sourcing for telecom infrastructure programs.

Supply support for PXFC211507SCV1R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power solutions for wireless infrastructure.

This device belongs to Infineon's PXF series of thermally enhanced LDMOS transistors, designed specifically for high-efficiency, high-ruggedness cellular base station power amplifiers operating in licensed sub-3 GHz bands.

FAQ

What is the recommended gate bias voltage for linear WCDMA operation?

The datasheet specifies V_GS = 2.6 V (typical) at I_DQ = 960 mA for optimal linearity and efficiency in single- and two-carrier WCDMA. This bias point is validated across 2115–2165 MHz and maintains IMD below –30.5 dBc at 32 W avg output.

Can PXFC211507SCV1R250XTMA1 be used in LTE applications?

Yes - while characterized for WCDMA, its 2110–2170 MHz bandwidth, 8 dB PAR handling, and –30.5 dBc IMD meet 3GPP LTE FDD Band I requirements. Reference circuit performance data confirms ACLR compliance at 20 MHz channel bandwidth and 25 dBm average output.

Is external ESD protection required despite the integrated HBM Class 2 rating?

No - the integrated ESD structure meets ANSI/ESDA/JEDEC JS-001 Class 2 (≥2 kV HBM), sufficient for standard SMT assembly. However, RF input/output traces should still follow good RF grounding practices to avoid transient coupling into gate or drain paths.

What is the maximum continuous drain current at 28 V operation?

The device is rated for 150 W CW output at 28 V, implying a maximum continuous drain current of ~5.36 A (P = V × I → I = 150 W / 28 V). This aligns with the 10:1 VSWR test condition and is supported by the 225 °C max junction temperature rating and 0.56 °C/W thermal resistance.