Nexperia USA Inc. PZT2907A,115

Overview

PZT2907A,115 from Nexperia is a PNP bipolar junction transistor (BJT) designed for medium-power switching and linear amplification. It delivers −600 mA DC collector current, −60 V collector-emitter breakdown voltage, and 100–300 DC current gain (h_FE) at −150 mA, housed in a thermally enhanced SOT223 surface-mount package with dual collector terminals. It is commonly used in relay drivers, power supply control circuits, and discrete logic-level translation stages.

For engineers reviewing the PZT2907A,115 datasheet, PZT2907A,115 pinout, PZT2907A,115 application, or PZT2907A,115 equivalent, key selection criteria include verified PNP switching performance at ≥−500 mA, thermal resistance (R_{th j-a} = 106 K/W), saturation voltage under load (V_CEsat ≤ −1.6 V @ −500 mA), and SOT223 package compatibility with high-current PCB layouts.

Technical Context

This device operates as a medium-speed, high-current PNP switch with f_T = 200 MHz and sub-40 ns turn-on time. Its dual-collector SOT223 configuration enables low-impedance heat path to PCB copper, supporting continuous operation up to T_j = 150 °C.

It exhibits defined h_FE behavior across five decades of collector current (−0.1 mA to −500 mA), with guaranteed minimum gain of 100 at −150 mA and 50 at −500 mA - enabling predictable biasing in both active and saturated regions.

Key Specifications

Pinout & Package

Package: SOT223 (SC-73), plastic surface-mount package with exposed collector pad for thermal conduction; 4-terminal configuration (pins 1–4).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching transistor applications.

Compared with MMBT2907A, PZT2907A,115 provides 5.7× lower thermal resistance and 3× higher continuous current rating; versus ZTX753, it offers identical current capability but in a smaller SOT223 footprint with lower cost and broader distribution.

Availability

PZT2907A,115 is available at Aetrix Electronics and suitable for relay driver circuits, linear regulator pass elements, LED current sink arrays, and discrete logic level shifter designs requiring stable component supply and long-term manufacturability.

Supply support for PZT2907A,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in high-volume production of discrete semiconductors, with engineering roots in Philips and NXP Standard Products, focused on automotive, industrial, and computing markets.

The PZT2907A,115 belongs to Nexperia's general-purpose bipolar transistor product line, engineered for robustness in medium-power switching applications where reliability, thermal performance, and consistent gain behavior are essential.

FAQ

What is the maximum continuous collector current for PZT2907A,115?

The maximum continuous DC collector current is −600 mA at T_amb ≤ 25 °C with proper PCB thermal design. Derating applies above 25 °C ambient; at 70 °C, rated current drops to approximately −400 mA based on R_{th j-a} = 106 K/W and T_j limit of 150 °C.

Is PZT2907A,115 pin-compatible with the NPN PZT2222A?

No - PZT2907A,115 (PNP) and PZT2222A (NPN) share the same SOT223 package outline and pin numbering, but polarity and internal connections differ: PZT2907A has pins 2 & 4 as collector and pin 3 as emitter, while PZT2222A uses pin 3 as collector and pins 2 & 4 as emitter. Direct substitution without circuit revision is not possible.

Does PZT2907A,115 require a heatsink for 500 mA operation?

No external heatsink is required if mounted on ≥1 cm² of 1 oz copper on FR-4 PCB. At −500 mA and V_CEsat = −1.6 V, power dissipation is 0.8 W; with R_{th j-a} = 106 K/W, junction temperature rise is ~85 K - well within the 150 °C T_j limit at 65 °C ambient.

Can PZT2907A,115 be used in audio amplifier stages?

It is not optimized for low-noise linear amplification. While functional in Class-A emitter-follower configurations, its f_T = 200 MHz and h_FE variation across current make it less suitable than purpose-designed audio transistors like BC557 or BC857 for high-fidelity signal paths.