NXP Semiconductors PZT3904,115
- Part No.:
- PZT3904,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Bipolar Transistors
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
PZT3904,115.pdf
- Description:
- TRANS NPN 40V 0.2A SC-73
- Quantity:
- Payment:

- Shipping:

Inventory:5,580
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Product details
Overview
PZT3904,115 from Nexperia (formerly Philips Semiconductors) is an NPN silicon switching transistor in SOT223 package, rated for 40 V VCEO, 200 mA IC, and 1.05 W Ptot at Tamb ≤25 °C, optimized for high-speed saturated switching in low-voltage digital logic interfaces and power control stages.
For engineers reviewing the PZT3904,115 datasheet, PZT3904,115 pinout, PZT3904,115 application, or PZT3904,115 equivalent, this discrete transistor is selected for its verified 300 MHz fT, low 200 mV VCEsat at IC/IB = 10 mA/1 mA, and thermal resistance of 117 K/W (junction-to-ambient), supporting reliable operation in space-constrained PCB layouts with moderate power dissipation.
Technical Context
The PZT3904,115 operates as a general-purpose NPN bipolar junction transistor with DC current gain (hFE) ranging from 60 at IC = 0.1 mA to 300 at IC = 10 mA, and exhibits fast switching performance: ton ≤65 ns, toff ≤240 ns, and ts ≤200 ns under defined test conditions (ICon = 10 mA, IBoff = −1 mA).
Its thermal design relies on the exposed collector pad in the SOT223 package, delivering Rth j-s = 36 K/W to soldering point and enabling stable junction temperatures up to 150 °C, while leakage currents remain tightly controlled: ICBO ≤50 nA at VCB = 30 V and IEBO ≤50 nA at VEB = 6 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum collector-emitter voltage before breakdown in common-emitter configuration; defines safe operating range for low-voltage switching rails. |
| IC (DC) | 200 mA - Continuous collector current handling capacity; supports driving small relays, LEDs, or logic-level MOSFET gates. |
| Ptot | 1.05 W - Total power dissipation at Tamb ≤25 °C with specified PCB mounting; requires thermal pad area ≥1 cm² for full rating. |
| fT | 300 MHz - Transition frequency at IC = 10 mA, VCE = 20 V; enables use in medium-frequency signal amplification and fast digital edge shaping. |
| VCEsat | 200 mV max - Saturation voltage at IC = 10 mA / IB = 1 mA; minimizes conduction loss and heat generation in saturated switch mode. |
| Rth j-a | 117 K/W - Junction-to-ambient thermal resistance under standard PCB mounting; informs heatsinking requirements for sustained operation. |
| hFE | 100–300 - DC current gain at IC = 10 mA, VCE = 1 V; determines required base drive current for predictable saturation. |
Pinout & Package
SOT223 plastic surface-mounted package with 4 leads: pins 2 and 4 are internally connected to the collector and serve as thermal and electrical connection points; pin 1 is base; pin 3 is emitter. The large collector pad provides enhanced thermal transfer to the PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biasing the base-emitter junction; requires current-limited drive to achieve target IC. |
| 2, 4 | Collector | Common high-current output node and primary thermal path; electrically tied and mounted to PCB copper for heat dissipation. |
| 3 | Emitter | Reference terminal for current flow; typically grounded or connected to load return path in low-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | Verified toff ≤240 ns and ts ≤200 ns enable clean digital waveform reproduction in clock buffers and pulse generators. |
| Low saturation voltage | VCEsat ≤200 mV at IC/IB = 10 mA/1 mA reduces power loss and self-heating during extended on-state operation. |
| Robust thermal design | Rth j-s = 36 K/W allows direct thermal coupling to PCB copper, supporting >1 W dissipation with minimal external heatsinking. |
| Low leakage performance | ICBO ≤50 nA ensures stable off-state behavior in battery-powered or high-impedance sensing circuits. |
| Complementary pairing | Designed as NPN counterpart to PZT3906 (PNP), enabling matched push-pull or H-bridge driver stages with consistent gain and timing. |
Applications
| LED Driver Circuit | Digital Logic Level Shifter |
|---|---|
Use Scenario: Driving multiple indicator LEDs from microcontroller GPIO pins with current limiting. IC Role / Device Role / Timing Role: Low-side saturated switch controlling LED anode-to-ground current path. Use Value: VCEsat ≤200 mV preserves forward voltage margin for LEDs while minimizing power loss and thermal rise. |
Use Scenario: Translating 3.3 V logic signals to 5 V TTL-compatible levels in mixed-voltage systems. IC Role / Device Role / Timing Role: Active pull-up switch enabling bidirectional level translation without external resistors. Use Value: fT = 300 MHz and fast ton/toff support clean edge transitions up to 10 MHz data rates. |
| Microcontroller Peripheral Driver | Small-Signal Relay Interface |
Use Scenario: Controlling solenoids, buzzers, or optocouplers from embedded MCU outputs. IC Role / Device Role / Timing Role: General-purpose interface transistor providing current gain and isolation between logic and load. Use Value: hFE ≥100 at IC = 10 mA ensures reliable saturation with ≤100 µA base drive from most MCUs. |
Use Scenario: Activating 5–12 V coil relays in industrial control panels or instrumentation. IC Role / Device Role / Timing Role: High-current switching element interfacing low-power logic to inductive relay loads. Use Value: IC = 200 mA rating and VCEO = 40 V accommodate typical relay coils while suppressing flyback-induced stress via snubber compatibility. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN switching transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT3904LT1G | Same die, SOT-23 package (3-pin), lower Ptot = 350 mW, Rth j-a = 300 K/W. | Limited to <100 mA continuous use; unsuitable for >0.5 W dissipation or high-duty-cycle switching. | Select when board space is critical and thermal load is light; not interchangeable without layout change. |
| BC847B,215 | Higher hFE (200–450), same SOT223 package, but VCEO = 45 V and Ptot = 0.625 W. | Better gain consistency at low IC, but reduced power handling limits peak current capability. | Prefer for precision analog switching or low-noise preamplifier stages; verify thermal margin for 200 mA loads. |
Compared with MMBT3904LT1G and BC847B,215, the PZT3904,115 delivers superior thermal performance (1.05 W rating, 117 K/W) and proven reliability in sustained 200 mA saturated switching-making it the preferred choice for industrial control interfaces where power density and long-term stability are prioritized over ultra-miniaturization.
Availability
PZT3904,115 is available at Aetrix Electronics and suitable for LED driver circuits, digital logic level shifters, microcontroller peripheral drivers, and small-signal relay interfaces requiring stable component supply across production lifecycles.
Supply support for PZT3904,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with roots in Philips Semiconductors' legacy product lines.
The PZT3904,115 belongs to Nexperia's general-purpose bipolar transistor family, engineered for robustness and consistency in industrial automation, consumer electronics, and automotive body-control modules.
FAQ
What is the maximum continuous collector current rating for the PZT3904,115?
The PZT3904,115 has a maximum DC collector current (IC) rating of 200 mA, specified under conditions where ambient temperature does not exceed 25 °C and the device is mounted on a PCB with a 1 cm² single-sided copper collector pad. Exceeding this current without derating risks thermal runaway or parametric shift.
Does the PZT3904,115 support high-frequency switching applications?
Yes, the PZT3904,115 supports high-frequency switching with a transition frequency (fT) of 300 MHz at IC = 10 mA and VCE = 20 V, and measured switching times including ton ≤65 ns and toff ≤240 ns. These values validate its use in pulse-width modulation and digital signal buffering up to ~10 MHz.
What is the pin configuration of the PZT3904,115 in the SOT223 package?
The PZT3904,115 uses a 4-pin SOT223 package with pin 1 as base, pins 2 and 4 jointly connected to the collector (including the exposed thermal pad), and pin 3 as emitter. This dual-collector-pin layout enhances both electrical conductivity and thermal transfer to the PCB.
How does the PZT3904,115 compare to the PZT3906 in circuit design?
The PZT3904,115 is the NPN complement to the PZT3906 PNP transistor; they share identical SOT223 packaging, voltage ratings (VCEO = 40 V), and thermal characteristics, enabling matched pair design in push-pull amplifiers, H-bridge drivers, and complementary logic interfaces without layout redesign.
Is the PZT3904,115 suitable for automotive applications?
The PZT3904,115 meets AEC-Q101 stress-test requirements for discrete semiconductors and is qualified for use in automotive body electronics such as lighting control, sensor interface circuits, and power window modules-provided operating junction temperature remains within the rated −65 °C to +150 °C range.
PZT3904,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 200 mA
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 1V
- Power - Max:
- 1.05 W
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-73
PZT3904,115 FAQ
1.How can I place an order for PZT3904,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PZT3904,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PZT3904,115 reliable?
The price and inventory of PZT3904,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PZT3904,115 is usually 5 days.
3.What payment methods are accepted for PZT3904,115?
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4.How is shipping managed for PZT3904,115?
PZT3904,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PZT3904,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PZT3904,115?
For technical support, including PZT3904,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PZT3904,115 requirements.
6.How does Aetrix verify that PZT3904,115 is sourced from the original manufacturer or authorized distributors?
All PZT3904,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PZT3904,115 meets industry standards.
7.What is the process for return or replacement of PZT3904,115?
All PZT3904,115 units undergo pre-shipment inspection (PSI). If there is an issue with PZT3904,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PZT3904,115 part is unused and in its original packaging.
Return procedure for PZT3904,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PZT3904,115 Tags

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MMBT3906LT1G
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MMBT3904-7-F
Diodes Incorporated

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MMBT3904LT1G
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BC846BLT1G
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BC847B,215
Nexperia USA Inc.

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