NXP Semiconductors QN9080DHNY

Overview

QN9080DHNY from NXP Semiconductors is a Bluetooth 5.0-compliant single-chip SoC integrating a 32-bit ARM Cortex-M4F core, 512 kB flash, 128 kB SRAM, -95 dBm RX sensitivity (1 Mbps), and ultra-low-power operation down to 1.0 µA in power-down mode. It serves as the central processing and wireless connectivity engine in compact battery-powered wearables and sensor fusion devices.

For engineers reviewing the QN9080DHNY datasheet, QN9080DHNY pinout, QN9080DHNY application, or QN9080DHNY equivalent, this page delivers verified technical context, validated pin functions for HVQFN48, real-world use-value metrics for BLE coexistence and sensor fusion, and two confirmed alternative SoCs with documented functional trade-offs.

Technical Context

The QN9080DHNY implements a multi-layer AHB matrix interconnect enabling concurrent access by the Cortex-M4F core, DMA controller, and peripherals-including four Flexcomm serial interfaces, SPIFI, and dual quadrature decoders-without bus contention. Its integrated Fusion Signal Processor (FSP) offloads sensor fusion computation from the main CPU, reducing active current during motion algorithm execution.

RF subsystem includes a single-ended RF port with on-chip balun, programmable TX output from −20 dBm to +2 dBm, and hardware-accelerated BLE packet traffic indicators (BLE_PTI0–3) for WLAN/BLE coexistence management. Power architecture integrates both DC-to-DC buck converter and LDO, supporting 1.62–3.6 V supply with dedicated VDD1 (digital), VDD2 (RF), and VDD3 (analog) domains.

Key Specifications

Pinout & Package

QN9080DHNY is packaged in a 6 × 6 mm HVQFN48 (SOT778-7) with 0.4 mm pitch, thermal pad exposed on underside for enhanced heat dissipation in compact wearable layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Bluetooth Low Energy SoC applications.

Compared with nRF52840 DK and CC2642R, QN9080DHNY delivers the lowest power-down current (1.0 µA), dedicated FSP for motion algorithm acceleration, and integrated capacitive touch sense - making it optimal for cost-sensitive, battery-limited wearables requiring embedded sensor intelligence.

Availability

QN9080DHNY is available at Aetrix Electronics and suitable for wearable health monitors, smart retail beacons, connected home sensors, and HID remote controls requiring stable component supply and long-term lifecycle support.

Supply support for QN9080DHNY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT markets, with deep expertise in ARM-based microcontrollers and wireless SoCs.

QN9080DHNY belongs to the QN908x Bluetooth 5.0 SoC family, designed specifically for ultra-low-power, sensor-rich edge devices where integrated processing, wireless connectivity, and battery longevity are critical.

FAQ

What is the package type and pin count of QN9080DHNY?

QN9080DHNY uses a 6 × 6 mm HVQFN48 package (SOT778-7) with 48 terminals and an exposed thermal pad. This package is explicitly listed in Table 1 of the official NXP datasheet for QN9080 variants, and the pin configuration matches Figure 4 (HVQFN48 pin configuration). The 'DHNY' suffix confirms the HVQFN48 variant with silicon revision D.

Does QN9080DHNY support Bluetooth 5.0 features like 2 Mbps PHY and long range?

Yes, QN9080DHNY supports Bluetooth 5.0-compliant 2 Mbps PHY with −91.5 dBm RX sensitivity in DC-DC mode, and all mandatory LE features including data length extension, secure connections, and master/slave concurrency. The datasheet confirms full v5.0 radio, link controller, host stack, and GATT profile integration - no external components required to implement these features in QN9080DHNY.

What are the key power consumption figures for QN9080DHNY in active and sleep modes?

QN9080DHNY achieves 3.5 mA RX current at 3 V (1 Mbps, DC-DC enabled), 5.0 mA RX current (2 Mbps), and 3.5 mA TX current at 0 dBm. In low-power states, it delivers 2.5 µA power-down 0 (wakeup via RTC/sleep timer) and 1.0 µA power-down 1 (wakeup via GPIO) - values measured and published in Section 3 of the NXP QN908x datasheet Rev. 1.3.

Can QN9080DHNY interface directly with external quad-SPI flash memory?

Yes, QN9080DHNY includes a dedicated SPI Flash Interface (SPIFI) with IO0–IO3, CLK, and CSN pins that support both standard and quad-SPI protocols. The SPIFI operates at higher bandwidth than generic SPI peripherals and is explicitly designed to execute code or store logs in external flash - confirmed in Section 3 "Serial interfaces" and Figure 3 block diagram of the QN908x datasheet.

Is there hardware support for sensor fusion and machine learning workloads in QN9080DHNY?

Yes, QN9080DHNY integrates a dedicated Fusion Signal Processor (FSP) coprocessor optimized for low-power execution of sensor fusion and lightweight ML inference. Unlike general-purpose CPU execution, the FSP reduces active current during motion algorithm processing - a design value explicitly cited in Section 3 "Digital peripherals" and validated in NXP application note AN12324 for QN908x sensor fusion benchmarks.