Renesas QS3306AS1G8

Overview

QS3306AS1G8 from Renesas Electronics (formerly IDT) is a high-speed CMOS dual bus switch with individual active-low enables, designed for signal isolation and voltage translation between 5V and 3.3V domains. It features 5Ω typical ON resistance, zero propagation delay, ±1μA input leakage, and operates across –40°C to +85°C for industrial hot-swap and clock gating applications.

For engineers reviewing the QS3306AS1G8 datasheet, QS3306AS1G8 pinout, QS3306AS1G8 application, or QS3306AS1G8 equivalent, key selection criteria include guaranteed sub-7Ω RON at 5V, 0.25ns max propagation delay contribution, undershoot clamp diodes on all I/Os, and SOIC-8 green package compliance with industrial temperature range requirements.

Technical Context

The QS3306AS1G8 implements two independent N-channel FET switches with no inherent body diode to VCC, enabling bidirectional analog/digital signal routing without DC path constraints. Each channel has dedicated active-low OE control, supporting asynchronous enable/disable of A→B paths without crosstalk or ground bounce.

It operates with rail-to-rail switching capability (–0.5V to +7V on all terminals except VCC), supports TTL-level control inputs (VIH ≥ 2V, VIL ≤ 0.8V), and maintains Hi-Z off-state current ≤ ±1μA - critical for low-noise bus isolation in mixed-voltage systems.

Key Specifications

Pinout & Package

QS3306AS1G8 is packaged in an 8-pin Small Outline IC (SOIC-8), green RoHS-compliant, surface-mount package with standard 1.27mm pitch and JEDEC MS-012AC outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual bus switch applications.

Compared with SN74CBTD3384ADW and 74LVC1G3157GW, the QS3306AS1G8 uniquely delivers two independently enabled channels in SOIC-8 with 5Ω RON, –0.5V to +7V I/O tolerance, and industrial temperature support - making it optimal for compact, mixed-voltage, hot-swap-critical designs.

Availability

QS3306AS1G8 is available at Aetrix Electronics and suitable for hot-swapping, clock gating, and voltage translation applications requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant packaging.

Supply support for QS3306AS1G8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT markets.

The QS3306AS1G8 belongs to Renesas' legacy QuickSwitch® bus switch family, engineered specifically for high-fidelity, low-noise signal routing in mixed-voltage industrial systems with stringent timing and reliability demands.

FAQ

What is the maximum allowable voltage on QS3306AS1G8 I/O pins relative to GND?

The QS3306AS1G8 specifies –0.5V to +7V absolute maximum on all I/O pins (1A, 1B, 2A, 2B, 1OE, 2OE), independent of VCC. This enables safe operation during voltage transients, undershoot events, and level translation between 5V and 3.3V domains without external protection circuitry. The device incorporates internal clamp diodes to handle –3V AC pulses, enhancing robustness in noisy environments. Always ensure VCC remains within 5V ±5% for guaranteed DC electrical performance.

Does QS3306AS1G8 support bidirectional signal flow?

Yes, QS3306AS1G8 supports fully bidirectional signal flow on each channel (1A↔1B and 2A↔2B) due to its symmetrical N-channel FET structure with no intrinsic body diode to VCC. Signals pass equally well from A to B or B to A when the corresponding OE is asserted LOW. This makes QS3306AS1G8 suitable for data bus isolation, analog signal routing (e.g., video), and bidirectional level translation without direction-control logic or external components.

What is the guaranteed ON resistance specification for QS3306AS1G8?

The QS3306AS1G8 guarantees a maximum ON resistance of 7Ω under worst-case conditions (VCC = min, VIN = 2.4V, ION = 15mA), with a typical value of 5Ω at VCC = 5V and VIN = 0V with 30mA current. This low RON ensures minimal voltage drop and signal distortion in high-speed digital and analog paths. RON is characterized but not 100% production tested - design margins should account for the 7Ω max in timing and voltage budgeting.

Can QS3306AS1G8 be used for clock gating without introducing jitter?

Yes, QS3306AS1G8 is well-suited for clock gating because it contributes negligible propagation delay (<0.25ns RC-limited) and zero added ground bounce. Its fast turn-on/off delays (1.5–6.5ns) and low 5Ω RON preserve clock edge integrity, while the absence of internal diodes prevents DC path-induced duty-cycle distortion. For best results, maintain clean VCC/GND decoupling and minimize trace inductance on OE control lines to avoid timing uncertainty in the enable path.

Is QS3306AS1G8 pin-compatible with other IDT QuickSwitch devices?

QS3306AS1G8 is pin-compatible with the original IDT QS3306A in SOIC-8 (S1G) package, including identical pinout, electrical behavior, and thermal characteristics. It is not pin-compatible with QS3306 (non-A version) or QS3306B variants, which differ in enable polarity or RON specs. Always verify the full part number suffix and consult the latest Renesas datasheet for migration guidance, especially regarding green packaging compliance and updated reliability testing.