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Renesas R1EV5801MBSDRDI#B0
- Part No.:
- R1EV5801MBSDRDI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.445", 11.30mm Width)
- Datasheet:
-
R1EV5801MBSDRDI#B0.pdf
- Description:
- IC EEPROM 1MBIT PARALLEL 32SOP
- Quantity:
- Payment:
- Shipping:
Inventory:1,672
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Product details
Overview
R1EV5801MBSDRDI#B0 from Renesas Electronics is a 1 Mbit (131,072 × 8-bit) parallel EEPROM featuring MONOS memory technology, 150 ns/250 ns access time (VCC = 4.5–5.5 V / 2.7–5.5 V), RDY/Busy and RES pin-based hardware write protection, and 128-byte page programming capability. It operates across −40°C to +85°C and supports industrial embedded systems requiring nonvolatile parameter storage with deterministic timing.
For engineers reviewing the R1EV5801MBSDRDI#B0 datasheet, R1EV5801MBSDRDI#B0 pinout, R1EV5801MBSDRDI#B0 application, or R1EV5801MBSDRDI#B0 equivalent, this device delivers verified byte/page write performance, JEDEC-compliant parallel interface timing, software data protection (SDP), and power-on/off noise immunity - critical for firmware configuration, calibration data retention, and boot code storage in resource-constrained controllers.
Technical Context
The R1EV5801MBSDRDI#B0 implements a parallel byte-wide interface with address latching on CE or WE falling edges and data latching on rising edges. Its MONOS cell architecture enables 104 erase/write cycles and >10-year data retention while maintaining low active power (20 mW/MHz typ) and standby current (110 µA max).
It integrates on-chip voltage detection, automatic page write (128-byte burst), data polling via I/O7, toggle-bit status monitoring via I/O6, and dual-layer write protection: hardware-level RES pin assertion and software-controlled SDP sequence (AA-55-A0 unlock). The RDY/Busy signal provides synchronous status feedback during internal write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 1 Mbit (131,072 × 8-bit) - supports full system configuration storage without external expansion. |
| Access time | 150 ns max at VCC = 4.5–5.5 V; 250 ns max at VCC = 2.7–5.5 V - ensures compatibility with legacy 8-bit microcontrollers running at ≤6.67 MHz. |
| Write cycle time | 10 ms max per byte or page - enables deterministic firmware update latency when using RDY/Busy polling. |
| Endurance & retention | ≥10,000 erase/write cycles; ≥10 years data retention - validated for long-life industrial control applications. |
| Supply voltage | 2.7 V to 5.5 V - interoperable with both 3.3 V and 5 V logic domains without level translation. |
| Operating temperature | −40°C to +85°C - qualified for industrial-grade ambient operation without derating. |
| Package | 32-pin plastic SOP (PRSP0032DC-A / FP-32DV), 525 mil width - standard footprint compatible with automated PCB assembly. |
Pinout & Package
Package: 32-pin plastic SOP (PRSP0032DC-A), 11.3 mm × 20.45 mm body, 1.27 mm lead pitch, Pb-free, tube packaging (22 pcs/tube).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address input | 17-bit address bus supporting full 131,072-word addressing; A7–A16 latched on first WE/CE falling edge for page mode. |
| I/O0–I/O7 | Data input/output | Bi-directional 8-bit data bus; I/O7 used for data polling, I/O6 for toggle-bit status indication during write. |
| CE | Chip enable | Active-low chip select; falling edge latches address; controls CE-controlled write timing (tCW ≥ 0.25 µs). |
| OE | Output enable | Active-low read strobe; determines tOE (75 ns max at 5 V) and output float timing (tDF ≤ 50 ns). |
| WE | Write enable | Active-low write strobe; falling edge latches address; controls WE-controlled write timing (tWP ≥ 0.25 µs). |
| VCC | Power supply | +2.7 V to +5.5 V supply; powers internal high-voltage generator for write/erase operations. |
| VSS | Ground | Reference ground for all I/O and internal circuitry; decoupling required per JEDEC layout guidelines. |
| RDY/Busy | Status output | Open-drain output pulled low during internal write; high-impedance otherwise - enables hardware wait-state generation. |
| RES | Reset input | Active-low hardware write protect; forces unprogrammable state during power-up/down; requires ≥1 µs high pulse before write. |
Key Features
| Feature | Design Value |
|---|---|
| MONOS memory cell | Enables 104 endurance and >10-year data retention with lower program voltage vs. floating-gate EEPROMs. |
| 128-byte page programming | Reduces average write time by 90% vs. byte-by-byte writes - critical for rapid firmware patching. |
| RDY/Busy + data polling | Provides dual asynchronous status reporting (hardware pin + I/O7 bit) for flexible host controller integration. |
| Hardware RES + software SDP | Two independent protection layers: RES pin blocks all operations; SDP requires AA-55-A0 unlock sequence. |
| Noise immunity on control pins | Rejects transients ≤20 ns on CE/OE/WE - prevents spurious writes during EMI events or power sequencing. |
Applications
| Industrial PLC Configuration Storage | Automotive ECU Calibration Data |
|---|---|
Use Scenario: Storing I/O mapping, PID tuning parameters, and fault log history in programmable logic controllers with no battery backup. IC Role / Device Role / Timing Role: Nonvolatile configuration register accessed via parallel bus during boot and runtime reconfiguration. Use Value: 10,000-cycle endurance and −40°C to +85°C operation ensure reliable parameter retention over 15+ years of field deployment. |
Use Scenario: Holding engine calibration tables (fuel maps, spark timing) that must survive vehicle ignition cycles and ECU resets. IC Role / Device Role / Timing Role: JEDEC-standard parallel EEPROM interfaced directly to automotive MCU's external memory bus. Use Value: RES pin synchronization with CPU reset signal prevents corruption during cold cranking voltage droop. |
| Medical Device Setup Profiles | Networking Equipment Boot Parameters |
Use Scenario: Saving user-defined therapy settings, alarm thresholds, and device serialization in portable diagnostic equipment. IC Role / Device Role / Timing Role: Secure parameter store with software data protection (SDP) enabled to prevent unauthorized firmware tampering. Use Value: SDP lock/unlock sequence (AA-55-A0 / AA-55-80-AA-55-20) provides cryptographic-lite access control without external security IC. |
Use Scenario: Storing MAC addresses, PHY initialization sequences, and fail-safe bootloader configuration in managed switches and routers. IC Role / Device Role / Timing Role: Parallel boot ROM mapped into CPU address space for deterministic initialization prior to DRAM bring-up. Use Value: 150 ns access time guarantees sub-microsecond read latency for critical boot vector fetches in real-time network stacks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel EEPROM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT28C256-15PU | 256 Kbit density (1/4 capacity); 150 ns access; no RDY/Busy pin; no RES pin; no page write. | Limited to smaller configuration sets; requires polling-only status detection; lacks hardware reset protection. | Select only if memory size < 256 Kbit suffices and host lacks RDY/Busy interrupt capability. |
| FM24CL64-G | 64 Kbit F-RAM; 40 MHz SPI interface; no write delay; unlimited endurance; 3.3 V only. | Serial interface replaces parallel bus; eliminates write latency but increases software overhead; incompatible pinout and protocol. | Choose for ultra-high-write-cycle applications where parallel bus is unavailable or SPI is preferred. |
Compared with AT28C256-15PU and FM24CL64-G, the R1EV5801MBSDRDI#B0 uniquely combines 1 Mbit density, parallel JEDEC interface, hardware RDY/Busy signaling, RES-based power-cycle protection, and 128-byte page writes - making it optimal for industrial controllers requiring deterministic, high-reliability nonvolatile storage with minimal host intervention.
Availability
R1EV5801MBSDRDI#B0 is available at Aetrix Electronics and suitable for industrial PLCs, automotive ECUs, medical diagnostics, and networking equipment requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for R1EV5801MBSDRDI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1EV5801MB series is part of Renesas' parallel EEPROM product line designed specifically for robust, pin-compatible replacement of legacy EPROM/EEPROM in industrial control and automotive subsystems requiring high reliability and extended temperature operation.
FAQ
What is the maximum write speed of the R1EV5801MBSDRDI#B0?
The R1EV5801MBSDRDI#B0 supports 128-byte page programming with a maximum write cycle time of 10 ms. This equates to an effective throughput of ~12.8 KB/s for sequential page writes. Byte writes also complete within 10 ms max, but page mode reduces average latency by eliminating repeated address setup overhead. The R1EV5801MBSDRDI#B0 achieves this using internal address auto-increment and MONOS cell optimization.
Does the R1EV5801MBSDRDI#B0 require external high-voltage programming circuitry?
No, the R1EV5801MBSDRDI#B0 integrates a charge-pump high-voltage generator and requires only a single 2.7 V to 5.5 V supply. All write and erase operations are performed internally using on-chip voltage boosting - eliminating external VPP pins, regulators, or timing-critical external pulses. This simplifies board design and improves system reliability compared to older EEPROM architectures.
How does the RES pin protect data during power transitions?
The RES pin on the R1EV5801MBSDRDI#B0 forces the device into an unprogrammable state when held low, blocking all read and write operations. During VCC ramp-up or ramp-down, tying RES to the host CPU's reset signal ensures the EEPROM remains inert until both power and processor logic stabilize - preventing spurious writes caused by noise on CE/OE/WE pins during brown-out conditions. The R1EV5801MBSDRDI#B0 requires RES ≥1 µs high before enabling writes.
Can the R1EV5801MBSDRDI#B0 be used in a 3.3 V-only system?
Yes, the R1EV5801MBSDRDI#B0 operates fully across 2.7 V to 5.5 V, including strict 3.3 V ±10% systems. At VCC = 3.3 V, its access time is 250 ns max and active current is 6 mA typical - meeting timing and power requirements of modern 3.3 V microcontrollers. All DC and AC specifications, including VIH/VIL thresholds and RDY/Busy drive strength, are guaranteed across this range. The R1EV5801MBSDRDI#B0 needs no level shifters in 3.3 V designs.
What happens if power fails during a write cycle on the R1EV5801MBSDRDI#B0?
The R1EV5801MBSDRDI#B0 includes on-chip power-loss detection and data protection circuitry that aborts incomplete writes and preserves pre-existing data integrity. If VCC drops below the operating threshold during a write, the internal state machine halts the operation and retains the original data in the targeted location. No partial or corrupted bytes result. This behavior is validated across −40°C to +85°C and is inherent to the MONOS cell architecture used in the R1EV5801MBSDRDI#B0.
R1EV5801MBSDRDI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- R1EV5801MB
- Package/Case:
- 32-SOIC (0.445", 11.30mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- EEPROM
- Technology:
- EEPROM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ms
- Access Time:
- 150 ns
- Voltage - Supply:
- 2.7V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOP
R1EV5801MBSDRDI#B0 FAQ
1.How can I place an order for R1EV5801MBSDRDI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1EV5801MBSDRDI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1EV5801MBSDRDI#B0 reliable?
The price and inventory of R1EV5801MBSDRDI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1EV5801MBSDRDI#B0 is usually 5 days.
3.What payment methods are accepted for R1EV5801MBSDRDI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1EV5801MBSDRDI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1EV5801MBSDRDI#B0?
R1EV5801MBSDRDI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1EV5801MBSDRDI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1EV5801MBSDRDI#B0?
For technical support, including R1EV5801MBSDRDI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1EV5801MBSDRDI#B0 requirements.
6.How does Aetrix verify that R1EV5801MBSDRDI#B0 is sourced from the original manufacturer or authorized distributors?
All R1EV5801MBSDRDI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1EV5801MBSDRDI#B0 meets industry standards.
7.What is the process for return or replacement of R1EV5801MBSDRDI#B0?
All R1EV5801MBSDRDI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1EV5801MBSDRDI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1EV5801MBSDRDI#B0 part is unused and in its original packaging.
Return procedure for R1EV5801MBSDRDI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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